Abstract: The invention relates to a method of producing a stacked structure. The inventive method comprises the following steps consisting in: a) using a first plate (1) which is, for example, made from silicon, and a second plate (5) which is also, for example, made from silicon, such that at least one of said first (1) and second (5) plates has, at least in part, a surface (2; 7) that cannot bond to the other plate; b) providing a surface layer (3; 8), which is, for example, made from silicon oxide, on at least one part of the surface (2) of the first plate and/or the surface (7) of the second plate (5); and c) bonding the two plates (1; 5) to one another. The aforementioned bonding incompatibility can, for example, result from the physicochemical nature of the surface or of a coating applied thereto, or from a roughness value (r?2, r?7) which is greater than a predetermined threshold. The invention also relates to a stacked structure produced using the inventive method.

Abstract: The invention relates to a method of producing a stacked structure. The inventive method comprises the following steps consisting in: a) using a first plate (1) which is, for example, made from silicon, and a second plate (5) which is also, for example, made from silicon, such that at least one of said first (1) and second (5) plates has, at least in part, a surface (2; 7) that cannot bond to the other plate; b) providing a surface layer (3; 8), which is, for example, made from silicon oxide, on at least one part of the surface (2) of the first plate and/or the surface (7) of the second plate (5); and c) bonding the two plates (1; 5) to one another. The aforementioned bonding incompatibility can, for example, result from the physicochemical nature of the surface or of a coating applied thereto, or from a roughness value (r?2, r?7) which is greater than a predetermined threshold. The invention also relates to a stacked structure produced using the inventive method.

Abstract: Optical switch comprising optical means (120) and driving means (114, 115, 124) on a substrate (100), cooperating with optical means to make them pivot between a rest position and at least one active position. According to the invention, the switch comprises first mobile stop means (122), rigidly fixed to the optical means (120, 130) so that they can pivot with the optical means, and second fixed stop means (128) arranged in a plane approximately parallel to the main face (110) of the substrate and cooperating with the first stop means, to fix the said active position of the optical means. Application to make an optical cross connect.

Abstract: Optical switch comprising optical means (120) and driving means (114, 115, 124) on a substrate (100), cooperating with optical means to make them pivot between a rest position and at least one active position. According to the invention, the switch comprises first mobile stop means (122), rigidly fixed to the optical means (120, 130) so that they can pivot with the optical means, and second fixed stop means (128) arranged in a plane approximately parallel to the main face (110) of the substrate and cooperating with the first stop means, to fix the said active position of the optical means.

Abstract: Process for producing a structure having a low dislocation density comprising an oxide layer buried in a semiconductor substrate. This process for producing an epitaxied structure with a low dislocation density has the structure incorporating an oxide layer (6) in a substrate (4) made from a semiconductor material and successively involves at least one implantation of oxygen ions in the substrate (4), at least one first conditioning heat treatment of the substrate, an epitaxy of a layer (14) of a semiconductor material on the substrate and a second heat treatment for eliminating dislocations (8) from the structure.

Abstract: A process for the production of an insulator buried in a semiconductor substrate by ionic implantation, and semiconductor structure comprising such layer.According to the invention the semiconductor structure comprises a silicon dioxide layer (104) interposed between a silicon substrate (102) and a silicon film (106) obtained by successive implantations of oxygen ions in the substrate, with doses less than 1.5.multidot.10.sup.18 ions/cm.sup.2, each implantation being followed by an annealing at a temperature higher than 1100.degree. C. The semi-conductor film (106) has a level of dislocations lower than 10.sup.5 per cm.sup.2, and the oxide layer (104) is completely homogeneous.