Patents by Inventor Jacques Mille

Jacques Mille has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Protection diode for a vertical semiconductor component
    Patent number: 5729044
    Abstract: A high voltage avalanche diode formed in an integrated circuit includes vertical power components. The integrated circuit is formed in an N-type semiconductor substrate. The rear surface of the substrate corresponds to a first main electrode of the power components, whose second main electrodes correspond to regions formed in P-type wells which are formed in the front surface of the substrate. The diode includes a P-type region wound substantially as a spiral that is formed in the front surface of the substrate; non-overlapping N-type regions formed in equal number in each turn of the spiral and forming with the spiral elemental avalanche diodes; metallizations connecting in series the elemental diodes; and a connection between an end of the spiral and the first electrode.
    Type: Grant
    Filed: September 12, 1996
    Date of Patent: March 17, 1998
    Assignee: SGS-Thomson Microelectronics S.A.
    Inventors: Jacques Mille, Philippe Meunier
  • Protection diode for a vertical semiconductor component
    Patent number: 5349232
    Abstract: A high voltage avalanche diode formed in an integrated circuit includes vertical power components. The integrated circuit is formed in an N-type semiconductor substrate. The rear surface of the substrate corresponds to a first main electrode of the power components, whose second main electrodes correspond to regions formed in P-type wells which are formed in the front surface of the substrate. The diode includes a P-type region wound substantially as a spiral that is formed in the front surface of the substrate; non-overlapping N-type regions formed in equal number in each turn of the spiral and forming with the spiral elemental avalanche diodes; metallizations connecting in series the elemental diodes; and a connection between an end of the spiral and the first electrode.
    Type: Grant
    Filed: June 29, 1993
    Date of Patent: September 20, 1994
    Assignee: SGS-Thomson Microelectronics S.A.
    Inventors: Jacques Mille, Philippe Meunier
  • High voltage spiral resistor
    Patent number: 5053743
    Abstract: A resistor constituted by a spiral region (4) of a second conductivity type and having a determined doping level, formed on a first surface of a semiconductor substrate (1) of the first conductivity type, having a first terminal on the first surface of the substrate and a second terminal electrically connected to the opposite surface of the substrate through an overdoped region of the same conductivity type as the substrate, more conductive areas (11) being formed at determined places of the spiral.
    Type: Grant
    Filed: April 13, 1990
    Date of Patent: October 1, 1991
    Assignee: SGS-Thomson Microelectronics S.A.
    Inventors: Jacques Mille, Daniel Quessada