Abstract: An architecture and method are provided for reading and writing, in parallel or in series, an electronic memory component based on a two-dimensional matrix of two-terminal binary memory unit cells built into a crossbar architecture. The component includes a logical column-selector located outside the matrix and activating at least one column, one or more cells of which are subjected to read or write processing. Also provided is a component and method with the reading of the status of the cells by differential detection on from two cells of two different rows, either between a storage column and a constant reference column, or between two rows or two storage columns. A component is also provided in which specific selection structure is exclusively dedicated to read operations, and/or in which complementary cells in two complementary columns connected together are encoded in a single atomic operation by means of a single write current.

Abstract: An architecture and method are provided for reading and writing, in parallel or in series, an electronic memory component based on a two-dimensional matrix of two-terminal binary memory unit cells built into a crossbar architecture. The component includes a logical column-selector located outside the matrix and activating at least one column, one or more cells of which are subjected to read or write processing. Also provided is a component and method with the reading of the status of the cells by differential detection on from two cells of two different rows, either between a storage column and a constant reference column, or between two rows or two storage columns. A component is also provided in which specific selection structure is exclusively dedicated to read operations, and/or in which complementary cells in two complementary columns connected together are encoded in a single atomic operation by means of a single write current.

Abstract: The invention relates to an electric synapse that comprises a main conductor with a predetermined potential V1, a secondary conductor said secondary conductor having a potential VX1+ that can vary between Vref?Vn and Vref+Vn, Vref being the reference potential, a nanoconductor with an adjustable conductance W1, the main conductor being connected to said secondary conductor through an adjustable conductance nanoconductor, one end at least of the main conductor being connected to an electric neuron, said electric neuron being capable of realizing a threshold function and applying a training control potential Va of Vref?Vp or Vref+Vp to the main conductor when the voltage O1 obtained at the output of said threshold function is different from the expected voltage T1, wherein the Vn and Vp potentials comply with: 2*Vn<Vt and |Vp?Vn|<Vt<|Vp+Vn|.