Patents by Inventor Jacques Schmitt

Jacques Schmitt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10658159
    Abstract: Plasma reactor vessel comprising a vacuum chamber; a first electrode in the vacuum chamber; a second electrode in the vacuum chamber, opposed to the first electrode and spaced from the first electrode; a power source electrically connected to one of the first or second electrodes; a substrate carrier having an electrically conductive material, the substrate carrier being configured to be in electrical contact with the second electrode and to hold a substrate at such that at least the majority of upper and lower surfaces of the substrate are untouched by any part of the plasma reactor and can be exposed to the plasma. The reactor vessel further includes a third electrode between the substrate carrier and the second electrode, wherein the third electrode is electrically insulated from the second electrode. And the third electrode and the substrate carrier are arranged such that when the substrate carrier holds a substrate, a first clearance gap is between the substrate and the third electrode.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: May 19, 2020
    Assignee: INDEOTEC SA
    Inventors: Omid Reza Shojaei, Jacques Schmitt, Fabrice Jeanneret
  • Publication number: 20160196959
    Abstract: Plasma reactor vessel comprising a vacuum chamber; a first electrode in the vacuum chamber; a second electrode in the vacuum chamber, opposed to the first electrode and spaced from the first electrode; a power source electrically connected to one of the first or second electrodes; a substrate carrier having an electrically conductive material, the substrate carrier being configured to be in electrical contact with the second electrode and to hold a substrate at such that at least the majority of upper and lower surfaces of the substrate are untouched by any part of the plasma reactor and can be exposed to the plasma. The reactor vessel further includes a third electrode between the substrate carrier and the second electrode, wherein the third electrode is electrically insulated from the second electrode. And the third electrode and the substrate carrier are arranged such that when the substrate carrier holds a substrate, a first clearance gap is between the substrate and the third electrode.
    Type: Application
    Filed: September 25, 2013
    Publication date: July 7, 2016
    Inventors: Omid Reza SHOJAEI, Jacques SCHMITT, Fabrice JEANNERET
  • Patent number: 9045828
    Abstract: A plasma reactor has a reactor vessel and a pair of electrodes in the form of spaced apart and oppositely disposed metallic surfaces defining therebetween a plasma discharge space. At least one of the metallic surfaces is the surface of a metallic plate having a plurality of gas feed openings extending through the metallic surface towards said discharge space and from a distribution chamber extending along the plate opposite the discharge space. The distribution chamber has a wall opposite and distant from the plate and includes a gas inlet arrangement with a plurality of gas inlet openings distributed along the wall and connected to one or more gas feed lines to the reactor. A gas flow resistant coefficient between the one or more gas feed lines and at least a predominant portion of the connected inlet openings are at least substantially equal.
    Type: Grant
    Filed: October 23, 2007
    Date of Patent: June 2, 2015
    Assignee: TEL Solar AG
    Inventors: Emmanuel Turlot, Jean-Baptiste Chevrier, Jacques Schmitt, Jean Barreiro
  • Patent number: 8056504
    Abstract: A vacuum vessel and at least two electrodes define an internal process space. At least one power supply is connectable with the electrodes. A substrate holder holds a substrate to be treated in the internal process space. At least one of the electrodes has along a first cross section a concave profile and has along a second cross section a convex profile, the first cross section being parallel to the second cross section. Gas is provided to the space through a gas inlet. Power is provided to the electrodes and the substrate is treated.
    Type: Grant
    Filed: February 19, 2010
    Date of Patent: November 15, 2011
    Assignee: Oerlikon Solar AG, Trubbach
    Inventors: Jacques Schmitt, Laurent Sansonnens, Mustapha Elyaakoubi, Michael Irzyk
  • Patent number: 7784426
    Abstract: A radiofrequency plasma reactor with first and second spaced electrodes has a concave surface facing a substrate supporting surface. A process area between the electrodes has a gas inlet for a process gas. A radiofrequency generator for frequencies greater than 13.56 MHz is connected to an electrode for generating a plasma discharge in and a gas outlet evacuates process gas. A dielectric layer has a convex surface engaging the concave electrode surface and an opposite planar surface. The substrate supporting surface receives a substrate of at least 0.7 m and defines a boundary of the process area to be exposed to the plasma. The dielectric layer is electrically in series with the substrate and plasma discharge and has capacitance per unit surface values which are not uniform for a distribution profile to compensate process non-uniformity along the working surface.
    Type: Grant
    Filed: October 16, 2007
    Date of Patent: August 31, 2010
    Assignee: OC Oerlikon Balzers AG
    Inventor: Jacques Schmitt
  • Publication number: 20100139863
    Abstract: A vacuum vessel and at least two electrodes define an internal process space. At least one power supply is connectable with the electrodes. A substrate holder holds a substrate to be treated in the internal process space. At least one of the electrodes has along a first cross section a concave profile and has along a second cross section a convex profile, the first cross section being parallel to the second cross section. Gas is provided to the space through a gas inlet. Power is provided to the electrodes and the substrate is treated.
    Type: Application
    Filed: February 19, 2010
    Publication date: June 10, 2010
    Applicant: Oerlikon Trading AG, Truebbach
    Inventors: Jacques Schmitt, Laurent Sansonnens, Mustapha Elyaakoubi, Michael Irzyk
  • Patent number: 7687117
    Abstract: A vacuum vessel and at least two electrodes define an internal process space. At least one power supply is connectable with the electrodes. A substrate holder holds a substrate to be treated in the internal process space. At least one of the electrodes has along a first cross section a concave profile and has along a second cross section a convex profile, the first cross section being parallel to the second cross section. Gas is provided to the space through a gas inlet. Power is provided to the electrodes and the substrate is treated.
    Type: Grant
    Filed: December 31, 2008
    Date of Patent: March 30, 2010
    Assignee: Oerlikon Trading AG, Truebbach
    Inventors: Jacques Schmitt, Laurent Sansonnens, Mustapha Elyaakoubi, Michael Irzyk
  • Patent number: 7661388
    Abstract: A radiofrequency plasma reactor (1) for the treatment of substantially large sized substrates is disclosed, comprising between the electrodes (3, 5) of the plasma reactor a solid or gaseous dielectric layer (11) having a non planar-shaped surface-profile, said profile being defined for compensating a process non uniformity in the reactor or generating a given distribution profile.
    Type: Grant
    Filed: March 27, 2007
    Date of Patent: February 16, 2010
    Assignee: Oerlikon Solar IP AG, Truebbach
    Inventor: Jacques Schmitt
  • Patent number: 7662302
    Abstract: The invention relates to a lifting and supporting device for handling and positioning particularly large-surface elements in the shape of panels, especially in plasma processing installations. Said lifting and supporting device comprises a particularly metallic base plate, on which a plurality of particularly dielectric pins are arranged. Said pins may be set in pin holes especially provided in the base plate. Said panel-shaped element may be positioned on the pin end for the handling thereof or during a plasma processing. Said panel-shaped element may present an electrostatic charge. A small diameter for the pins and pin holes is selected such that, in conformity with the panel-shaped element provided with the electrostatic charge, an undesired electrostatic charge on said panel-shaped element is essentially avoided or, in conformity with the panel-shaped element to be plasma processed, a plasma perturbation in the area of the pin holes or pins is essentially avoided.
    Type: Grant
    Filed: July 15, 2002
    Date of Patent: February 16, 2010
    Assignee: Oerlikon Solar IP AG, Trubbach
    Inventors: Mustapha Elyaakoubi, Jacques Schmitt
  • Publication number: 20090155489
    Abstract: A vacuum vessel and at least two electrodes define an internal process space. At least one power supply is connectable with the electrodes. A substrate holder holds a substrate to be treated in the internal process space. At least one of the electrodes has along a first cross section a concave profile and has along a second cross section a convex profile, the first cross section being parallel to the second cross section. Gas is provided to the space through a gas inlet. Power is provided to the electrodes and the substrate is treated.
    Type: Application
    Filed: December 31, 2008
    Publication date: June 18, 2009
    Applicant: OERLIKON TRADING AG, TRUEBBACH
    Inventors: Jacques Schmitt, Laurent Sansonnens, Mustapha Elyaakoubi, Michael Irzyk
  • Publication number: 20090127673
    Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.
    Type: Application
    Filed: January 28, 2009
    Publication date: May 21, 2009
    Applicant: OERLIKON TRADING AG, TRUEBBACH
    Inventors: Ulrich Kroll, Cedric Bucher, Jacques Schmitt, Markus Poppeller, Christoph Hollenstein, Juliette Ballutaud, Alan Howling
  • Patent number: 7504279
    Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.
    Type: Grant
    Filed: November 29, 2007
    Date of Patent: March 17, 2009
    Assignee: Oerlikon Trading AG, Trubbach
    Inventors: Ulrich Kroll, Cedric Bucher, Jacques Schmitt, Markus Poppeller, Christoph Hollenstein, Juliette Ballutaud, Alan Howling
  • Patent number: 7487740
    Abstract: A vacuum vessel and at least two electrodes define an internal process space. At least one power supply is connectable with the electrodes. A substrate holder holds a substrate to be treated in the internal process space. At least one of the electrodes has along a first cross section a concave profile and has along a second cross section a convex profile, the first cross section being parallel to the second cross section. Gas is provided to the space through a gas inlet. Power is provided to the electrodes and the substrate is treated.
    Type: Grant
    Filed: September 8, 2004
    Date of Patent: February 10, 2009
    Assignee: Oerlikon Trading AG, Truebbach
    Inventors: Jacques Schmitt, Laurent Sanonnens, Mustapha Elyaakoubi, Michael Irzyk
  • Publication number: 20080184934
    Abstract: A radiofrequency plasma reactor with first and second spaced electrodes has a concave surface facing a substrate supporting surface. A process area between the electrodes has a gas inlet for a process gas. A radiofrequency generator for frequencies greater than 13.56 MHz is connected to an electrode for generating a plasma discharge in and a gas outlet evacuates process gas. A dielectric layer has a convex surface engaging the concave electrode surface and an opposite planar surface. The substrate supporting surface receives a substrate of at least 0.7 m and defines a boundary of the process area to be exposed to the plasma. The dielectric layer is electrically in series with the substrate and plasma discharge and has capacitance per unit surface values which are not uniform for a distribution profile to compensate process non-uniformity along the working surface.
    Type: Application
    Filed: October 16, 2007
    Publication date: August 7, 2008
    Inventor: Jacques Schmitt
  • Publication number: 20080093341
    Abstract: A plasma reactor has a reactor vessel and a pair of electrodes in the form of spaced apart and oppositely disposed metallic surfaces defining therebetween a plasma discharge space. At least one of the metallic surfaces is the surface of a metallic plate having a plurality of gas feed openings extending through the metallic surface towards said discharge space and from a distribution chamber extending along the plate opposite the discharge space. The distribution chamber has a wall opposite and distant from the plate and includes a gas inlet arrangement with a plurality of gas inlet openings distributed along the wall and connected to one or more gas feed lines to the reactor. A gas flow resistant coefficient between the one or more gas feed lines and at least a predominant portion of the connected inlet openings are at least substantially equal.
    Type: Application
    Filed: October 23, 2007
    Publication date: April 24, 2008
    Applicant: Unaxis Balzers Aktiengesellschaft
    Inventors: Emmanuel Turlot, Jean-Baptiste Chevrier, Jacques Schmitt, Jean Barreiro
  • Publication number: 20080076237
    Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.
    Type: Application
    Filed: November 29, 2007
    Publication date: March 27, 2008
    Applicant: OC Oerlikon Balzers AG
    Inventors: Ulrich Kroll, Cedric Bucher, Jacques Schmitt, Markus Poppeller, Christoph Hollenstein, Juliette Ballutaud, Alan Howling
  • Patent number: 7344909
    Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.
    Type: Grant
    Filed: October 22, 2003
    Date of Patent: March 18, 2008
    Assignee: OC Oerlikon Balzers AG
    Inventors: Ulrich Kroll, C├ędric Bucher, Jacques Schmitt, Markus Poppeller, Christoph Hollenstein, Juliette Ballutaud, Alan Howling
  • Publication number: 20070283888
    Abstract: A radiofrequency plasma reactor (1) for the treatment of substantially large sized substrates is disclosed, comprising between the electrodes (3, 5) of the plasma reactor a solid or gaseous dielectric layer (11) having a non planar-shaped surface-profile, said profile being defined for compensating a process non uniformity in the reactor or generating a given distribution profile.
    Type: Application
    Filed: March 27, 2007
    Publication date: December 13, 2007
    Inventor: Jacques Schmitt
  • Patent number: 7306829
    Abstract: A plasma reactor has a reactor vessel and a pair of electrodes in the form of spaced apart and oppositely disposed metallic surfaces defining therebetween a plasma discharge space. At least one of the metallic surfaces is the surface of a metallic plate having a plurality of gas feed openings extending through the metallic surface towards said discharge space and from a distribution chamber extending along the plate opposite the discharge space. The distribution chamber has a wall opposite and distant from the plate and includes a gas inlet arrangement with a plurality of gas inlet openings distributed along the wall and connected to one or more gas feed lines to the reactor. A gas flow resistant coefficient between the one or more gas feed lines and at least a predominant portion of the connected inlet openings are at least substantially equal.
    Type: Grant
    Filed: November 21, 2002
    Date of Patent: December 11, 2007
    Assignee: Unaxis Balzers Aktiengesellschaft
    Inventors: Emmanuel Turlot, Jean-Baptiste Chevrier, Jacques Schmitt, Jean Barreiro
  • Publication number: 20060016398
    Abstract: A pin assembly for lifting and supporting substrates according to the invention comprises a roller glide for a lift pin with rollers reducing the friction of the vertical pin movement, a ball bearing sole plate with elastic suspension for re-centering the sole plate after one coating cycle and a ball-bearing pin head that lowers the friction between the pin and the substrate and minimizes lateral forces that the substrate can apply on the pin.
    Type: Application
    Filed: May 25, 2005
    Publication date: January 26, 2006
    Inventors: Laurent Dubost, Sylvain Hernandez, Hans Jaeger, Karine Landry, Bertrand Vinel, Eugene Zapodeanu, Jacques Schmitt, Redouane EL Bouchikhy