Abstract: A printed circuit board (PCB) including: a negative thermal coefficient (NTC) thermistor which provides an electrical signal received from outside the PCB, wherein an electrical resistance of the NTC thermistor varies according to a negative thermal coefficient; and a heating pattern which receives the electrical signal from the NTC thermistor, wherein the heating pattern includes a positive thermal coefficient (PTC) thermistor with an electrical resistance that varies according to a positive thermal coefficient, wherein the PTC thermistor has a first thermal coefficient of resistance at a first critical temperature or below and changes to a second thermal coefficient of resistance above the first critical temperature, and the NTC thermistor has a third thermal coefficient of resistance at a second critical temperature or below and changes to a fourth thermal coefficient of resistance above the second critical temperature.

Abstract: A printed circuit board (PCB) including: a negative thermal coefficient (NTC) thermistor which provides an electrical signal received from outside the PCB, wherein an electrical resistance of the NTC thermistor varies according to a negative thermal coefficient; and a heating pattern which receives the electrical signal from the NTC thermistor, wherein the heating pattern includes a positive thermal coefficient (PTC) thermistor with an electrical resistance that varies according to a positive thermal coefficient, wherein the PTC thermistor has a first thermal coefficient of resistance at a first critical temperature or below and changes to a second thermal coefficient of resistance above the first critical temperature, and the NTC thermistor has a third thermal coefficient of resistance at a second critical temperature or below and changes to a fourth thermal coefficient of resistance above the second critical temperature.

Abstract: A method of controlling a temperature of a non-volatile storage device includes determining whether the temperature of the non-volatile storage device is greater than a control engagement temperature, and adjusting a data I/O performance level P when the temperature of the non-volatile storage device is greater than the control engagement temperature. The non-volatile storage device may operate at the maximum performance level in a range in which the non-volatile storage device is protected from heat.

Abstract: A secondary memory device includes: a substrate and a housing configured to accommodate at least a part of the substrate. The substrate has upper and lower opposed surfaces and includes a first region in which a first semiconductor device is mounted on the upper surface and a second region in which a second semiconductor device is mounted on the upper surface. The housing includes a first sub-housing covering the upper surface of the substrate at the first region and the first semiconductor device. The first sub-housing does not extend to cover the upper surface of the substrate at the second region.

Abstract: A method of controlling a temperature of a non-volatile storage device includes determining whether the temperature of the non-volatile storage device is greater than a control engagement temperature, and adjusting a data I/O performance level P when the temperature of the non-volatile storage device is greater than the control engagement temperature. The non-volatile storage device may operate at the maximum performance level in a range in which the non-volatile storage device is protected from heat.

Abstract: A secondary memory device includes: a substrate and a housing configured to accommodate at least a part of the substrate. The substrate has upper and lower opposed surfaces and includes a first region in which a first semiconductor device is mounted on the upper surface and a second region in which a second semiconductor device is mounted on the upper surface. The housing includes a first sub-housing covering the upper surface of the substrate at the first region and the first semiconductor device. The first sub-housing does not extend to cover the upper surface of the substrate at the second region.

Abstract: The present invention relates to the methods for hydrophilization, capable of greatly improving the surface wettability of wet surface heat exchangers by transforming the solid surface to an improved surface having hydrophilic porous structure.