Abstract: In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.

Abstract: An electronic device includes a substrate having a conductive structure with a substrate outward terminal at a second side of the substrate. A dielectric structure with an opening is adjacent to the second side. An electronic component is coupled to the substrate and an encapsulant encapsulates the electronic component. The substrate outward terminal comprises a multi-via terminal or a multi-stage via. The multi-via terminal includes pad conductive vias in the opening, a pad dielectric via interposed between the pad conductive vias, and a conductor comprising a conductor top side with micro dimples over the pad conductive vias and the pad dielectric via. The multi-stage terminal includes a pad base within the opening having a top side recessed below an upper surface the dielectric and a pad head coupled to the pad base within the opening, the pad head having a top side with a micro dimple.

Abstract: In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises a redistribution layer (RDL) substrate having a top surface and a bottom surface, wherein the RDL substrate comprises a filler-free dielectric material, an electronic device on the top surface of the RDL substrate, an electrical interconnect on the bottom surface of the RDL substrate and electrically coupled to the electronic device, a first protective material contacting a side surface of the electronic device and the top surface of the RDL substrate, and a second protective material contacting a side surface of the electrical interconnect and the bottom surface of the RDL substrate. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device includes a first substrate and a second substrate. The first substrate includes a substrate first side, a substrate second side, and a first conductive structure. An inner electronic component is coupled to the first conductive structure proximate to the substrate second side. An outer electronic component is coupled to the first conductive structure proximate to the substrate first side. The outer electronic component includes a body and a groove in the body configured to couple with an external interconnect. Inner interconnects couple the first substrate to the second substrate. The first substrate, the second substrate, the inner electronic component, and the outer electronic component are in a stacked configuration. The inner electronic component is interposed between the first substrate and the second substrate. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises a redistribution layer (RDL) substrate having a top surface and a bottom surface, wherein the RDL substrate comprises a filler-free dielectric material, an electronic device on the top surface of the RDL substrate, an electrical interconnect on the bottom surface of the RDL substrate and electrically coupled to the electronic device, a first protective material contacting a side surface of the electronic device and the top surface of the RDL substrate, and a second protective material contacting a side surface of the electrical interconnect and the bottom surface of the RDL substrate. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device comprises a lower substrate comprising a lower dielectric structure and a lower conductive structure, an electronic component coupled with a bottom side of the lower substrate and coupled with the lower conductive structure, an upper substrate over a top side of the lower substrate and comprising an upper dielectric structure and an upper conductive structure, an internal interconnect between the upper substrate and the lower substrate and coupled with the upper conductive structure and the lower conductive structure, and a first antenna component between the upper substrate and the lower substrate and coupled with the upper conductive structure. Other examples and related methods are also disclosed herein.

Abstract: An electronic device includes a substrate having a conductive structure with a substrate outward terminal at a second side of the substrate. A dielectric structure with an opening is adjacent to the second side. An electronic component is coupled to the substrate and an encapsulant encapsulates the electronic component. The substrate outward terminal comprises a multi-via terminal or a multi-stage via. The multi-via terminal includes pad conductive vias in the opening, a pad dielectric via interposed between the pad conductive vias, and a conductor comprising a conductor top side with micro dimples over the pad conductive vias and the pad dielectric via. The multi-stage terminal includes a pad base within the opening having a top side recessed below an upper surface the dielectric and a pad head coupled to the pad base within the opening, the pad head having a top side with a micro dimple.

Abstract: In one example, an electronic device includes a substrate having a conductive structure. The conductive structure includes a substrate inward terminal at a first side of the substrate and a substrate outward terminal at a second side of the substrate. The substrate includes a dielectric structure with a first opening is at the second side. An electronic component is at the first side of the substrate and is electrically coupled to the substrate inward terminal, and an encapsulant encapsulates the electronic component. The substrate outward terminal comprises one of a multi-via terminal or a multi-stage via. The multi-via terminal includes pad conductive vias in the first opening a pad dielectric via interposed between the pad conductive vias in the first opening and a conductor comprising a conductor top side with micro dimples over the pad conductive vias and the pad dielectric via.

Abstract: In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises a redistribution layer (RDL) substrate having a top surface and a bottom surface, wherein the RDL substrate comprises a filler-free dielectric material, an electronic device on the top surface of the RDL substrate, an electrical interconnect on the bottom surface of the RDL substrate and electrically coupled to the electronic device, a first protective material contacting a side surface of the electronic device and the top surface of the RDL substrate, and a second protective material contacting a side surface of the electrical interconnect and the bottom surface of the RDL substrate. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device includes a substrate having a conductive structure. The conductive structure includes a substrate inward terminal at a first side of the substrate and a substrate outward terminal at a second side of the substrate. The substrate includes a dielectric structure with a first opening is at the second side. An electronic component is at the first side of the substrate and is electrically coupled to the substrate inward terminal, and an encapsulant encapsulates the electronic component. The substrate outward terminal comprises one of a multi-via terminal or a multi-stage via. The multi-via terminal includes pad conductive vias in the first opening a pad dielectric via interposed between the pad conductive vias in the first opening and a conductor comprising a conductor top side with micro dimples over the pad conductive vias and the pad dielectric via.

Abstract: In one example, a semiconductor device comprises a substrate comprising a dielectric, a first conductor on a top side of the dielectric, and a second conductor on a bottom side of the dielectric, wherein the dielectric has an aperture, and the first conductor comprises a partial via contacting a pad of the second conductor through the aperture, an electronic device having an interconnect electrically coupled to the first conductor, and an encapsulant on a top side of the substrate contacting a side of the electronic device. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.