Abstract: A semiconductor package, and a method of manufacturing thereof, comprising a contact in a plated sidewall encapsulant opening, substantially as shown in and/or described in connection with at least one of the figures, as set forth more completely in the claims.

Abstract: A semiconductor device with fine pitch redistribution layers is disclosed and may include a semiconductor die with a bond pad and a first passivation layer comprising an opening above the bond pad. A redistribution layer (RDL) may be formed on the passivation layer with one end of the RDL electrically coupled to the bond pad and a second end comprising a connection region. A second passivation layer may be formed on the RDL with an opening for the connection region of the RDL. An under bump metal (UBM) may be formed on the connection region of the RDL and a portion of the second passivation layer. A bump contact may be formed on the UBM, wherein a width of the RDL is less than a width of the opening in the second passivation layer and may be constant from the bond pad through at least a portion of the opening.

Abstract: Provided are a semiconductor device having a stably formed structure capable of being electrically connected to a second electronic device without causing damage to the semiconductor device, and a manufacturing method thereof. In one embodiment, the semiconductor device may comprise a semiconductor die, an encapsulation part formed on lateral surfaces of the semiconductor die, a dielectric layer formed on the semiconductor die and the encapsulation part, a redistribution layer passing through a part of the dielectric layer and electrically connected to the semiconductor die, a plurality of conductive balls extending through other parts of the dielectric layer and electrically connected to the redistribution layer where the conductive balls are exposed to an environment outside of the semiconductor device, and conductive vias extending through the encapsulation part and electrically connected to the redistribution layer.

Abstract: A semiconductor device with etched grooves for embedded devices is disclosed and may, for example, include a substrate comprising a top surface and a bottom surface, a groove extending into the substrate from the bottom surface, and a redistribution structure in the substrate between the top surface and the bottom surface of the substrate. A semiconductor die may, for example, be coupled to the top surface of the substrate. An electronic device may, for example, be at least partially within the groove and electrically coupled to the redistribution structure. A conductive pad may, for example, be on the bottom surface of the substrate. A conductive bump may, for example, be on the conductive pad. The electronic device in the groove may, for example, extend beyond the bottom surface of the substrate a distance that is less than a height of the conductive bump from the bottom surface of the substrate. An encapsulant may, for example, encapsulate the semiconductor die and the top surface of the substrate.

Abstract: An electronic device and a method of making an electronic device. As non-limiting examples, various aspects of this disclosure provide various methods of making electronic devices, and electronic devices made thereby, that utilize a film assist mold process.

Abstract: An electronic device and a method of making an electronic device. As non-limiting examples, various aspects of this disclosure provide various methods of making electronic devices, and electronic devices made thereby, that utilize a film assist mold process.

Abstract: A semiconductor package, and a method of manufacturing thereof, comprising a contact in a plated sidewall encapsulant opening, substantially as shown in and/or described in connection with at least one of the figures, as set forth more completely in the claims.

Abstract: A semiconductor device with fine pitch redistribution layers is disclosed and may include a semiconductor die with a bond pad and a first passivation layer comprising an opening above the bond pad. A redistribution layer (RDL) may be formed on the passivation layer with one end of the RDL electrically coupled to the bond pad and a second end comprising a connection region. A second passivation layer may be formed on the RDL with an opening for the connection region of the RDL. An under bump metal (UBM) may be formed on the connection region of the RDL and a portion of the second passivation layer. A bump contact may be formed on the UBM, wherein a width of the RDL is less than a width of the opening in the second passivation layer and may be constant from the bond pad through at least a portion of the opening.

Abstract: Provided are a semiconductor device having a stably formed structure capable of being electrically connected to a second electronic device without causing damage to the semiconductor device, and a manufacturing method thereof. In one embodiment, the semiconductor device may comprise a semiconductor die, an encapsulation part formed on lateral surfaces of the semiconductor die, a dielectric layer formed on the semiconductor die and the encapsulation part, a redistribution layer passing through a part of the dielectric layer and electrically connected to the semiconductor die, a plurality of conductive balls extending through other parts of the dielectric layer and electrically connected to the redistribution layer where the conductive balls are exposed to an environment outside of the semiconductor device, and conductive vias extending through the encapsulation part and electrically connected to the redistribution layer.