Abstract: Provided are aminopyridine compounds and pharmaceutically acceptable compositions thereof which exhibit inhibition activity against certain mutated forms of EGFR.

Abstract: The present invention relates to a fusion protein comprising a SARS-CoV-2-derived receptor-binding domain and a nucleocapsid protein, and the use thereof. The fusion protein comprising a coronavirus-derived receptor-binding domain and a nucleocapsid protein is highly applicable to a multivalent vaccine composition having greatly improved in-vivo half-life and remarkably superior efficacy compared to an immunogenic composition comprising only a receptor-binding domain. In particular, the fusion protein can greatly improve the titer of the coronavirus-specific antibody formation and T-cell immune response, and is thus useful for the prevention and treatment of coronaviruses comprising SARS-CoV-2.

Abstract: Disclosed herein is a single pulse laser apparatus that includes: a resonator having a first mirror, a second mirror, a gain medium, an electro-optic modulator (EOM) configured to perform single pulse switching, and an acousto-optic modulator (AOM) configured to perform mode-locking; a photodiode configured to measure a laser beam oscillated in the resonator; a synchronizer configured to convert an electrical signal, which is generated by measuring the laser beam, into a transistor-transistor logic (TTL) signal; a delay unit configured to set a delay time for the TTL signal to synchronize the EOM and the AOM and output a trigger TTL signal according to the delay time; an AOM driver configured to input the trigger TTL signal to the AOM that performs mode-locking and drive the AOM; and an EOM driver configured to input the trigger TTL signal to the EOM that performs single pulse switching and drive the EOM.

Abstract: Disclosed herein is a single pulse laser apparatus that includes: a resonator having a first mirror, a second mirror, a gain medium, an electro-optic modulator (EOM) configured to perform single pulse switching, and an acousto-optic modulator (AOM) configured to perform mode-locking; a photodiode configured to measure a laser beam oscillated in the resonator; a synchronizer configured to convert an electrical signal, which is generated by measuring the laser beam, into a transistor-transistor logic (TTL) signal; a delay unit configured to set a delay time for the TTL signal to synchronize the EOM and the AOM and output a trigger TTL signal according to the delay time; an AOM driver configured to input the trigger TTL signal to the AOM that performs mode-locking and drive the AOM; and an EOM driver configured to input the trigger TTL signal to the EOM that performs single pulse switching and drive the EOM.

Abstract: Disclosed is a group III nitride compound semiconductor device having a substrate, buffer layers on the substrate, and a group III nitride compound semiconductor layer on the top layer of the buffer layers. The buffer layers comprises a first buffer layer formed on the substrate and a second buffer layer formed on the first buffer layer. The first buffer layer is made of transition metal nitride, and the second buffer layer is made of nitride of gallium and a transition metal.

Abstract: Disclosed is a group III nitride compound semiconductor device having a substrate, buffer layers on the substrate, and a group III nitride compound semiconductor layer on the top layer of the buffer layers. The buffer layers comprises a first buffer layer formed on the substrate and a second buffer layer formed on the first buffer layer. The first buffer layer is made of transition metal nitride, and the second buffer layer is made of nitride of gallium and a transition metal.

Abstract: Disclosed is a group III nitride compound semiconductor device having a substrate, buffer layers on the substrate, and a group III nitride compound semiconductor layer on the top layer of the buffer layers. The buffer layers comprises a first buffer layer formed on the substrate and a second buffer layer formed on the first buffer layer. The first buffer layer is made of transition metal nitride, and the second buffer layer is made of nitride of gallium and a transition metal.

Abstract: Disclosed is a group III nitride compound semiconductor device having a substrate, buffer layers on the substrate, and a group III nitride compound semiconductor layer on the top layer of the buffer layers. The buffer layers comprises a first buffer layer formed on the substrate and a second buffer layer formed on the first buffer layer. The first buffer layer is made of transition metal nitride, and the second buffer layer is made of nitride of gallium and a transition metal.

Abstract: The present invention relates to a nitride-based light emitting device having a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed on a substrate, wherein an Al1-xSixN interlayer is formed inside of the n-type nitride semiconductor layer. Accordingly, threading dislocation generated from the initial stage of the growth of the n-type nitride-based semiconductor layer can be reduced, and tensile strain can be decreased, thereby implanting a nitride-based light emitting device with high reliability.