Abstract: The present invention relates to a method for producing a diene-based graft copolymer resin, and a diene-based graft copolymer resin produced therefrom, the method including: mixing an aromatic vinyl-based monomer, a diene-based rubber polymer, and a polymerization initiator to prepare a first reactant; mixing a vinyl cyan-based monomer and an antioxidant to prepare a second reactant; adding and polymerizing the first reactant and the second reactant into a polymerization reactor to prepare a polymer; and removing unreacted monomers in a devolatilization tank.

Abstract: A display device includes a first insulating layer disposed on a substrate, a first transistor including a first active layer on the first insulating layer and having a first mobility, and a first gate electrode overlapping the first active layer, a first gate insulating layer on the first insulating layer and the first active layer, a second gate insulating layer on the first gate insulating layer, and a second transistor including a second active layer between the first gate insulating layer and the second gate insulating layer, spaced apart from the first active layer and having a second mobility greater than the first mobility, and a second gate electrode overlapping the second active layer. The first gate insulating layer includes a first oxide layer, a nitride layer, and a second oxide layer with lower hydrogen concentration than the first oxide layer.

Abstract: A display device according to an embodiment includes a substrate, a first bottom electrode disposed on the substrate, a first passivation layer disposed on the first bottom electrode, and containing at least one of silicon nitride, silicon oxide, and silicon oxynitride, and a first additive, a first insulating layer disposed on the first passivation layer, an active layer disposed on the first insulating layer, and containing an oxide semiconductor, a gate insulating layer disposed on the active layer, a gate electrode disposed on the gate insulating layer, and a second insulating layer disposed on the gate electrode. The first bottom electrode includes a first metal layer and a second metal layer disposed on the first metal layer and exposing a side surface of the first metal layer, and the first passivation layer covers the exposed side surface of the first metal layer.

Abstract: A display device is divided into a deformable part which is foldable or rollable and a non-deformable part disposed adjacent to the deformable part. The display device may include a support layer containing a polymer resin, a lower conductive layer disposed on the support layer and having a first metal layer, a second metal layer, and a third metal layer stacked in sequence, and a display panel disposed on the lower conductive layer. The first metal layer may contain nickel (Ni) and vanadium (V), the second metal layer may contain silver (Ag), and the third metal layer may contain nickel (Ni).

Abstract: An inkjet printing device includes: an inkjet head; an ink supply device connected to the inkjet head; a purge bath below the inkjet head, and connected to the ink supply device; a first channel connecting the purge bath and the ink supply device; and a densitometer in the first channel.

Abstract: An inkjet printing apparatus includes: a plurality of inkjet heads configured to discharge ink, a supply storage device configured to supply the ink to the plurality of inkjet heads, a plurality of supply flow paths configured to move the ink from the supply storage device to the plurality of inkjet heads, a plurality of discharge flow paths configured to move the ink from the plurality of inkjet heads to the supply storage device, and a plurality of by-pass lines directly connecting the plurality of supply flow paths with the plurality of discharge flow paths.

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

Abstract: A method of measuring a droplet is disclosed that includes discharging a droplet onto a substrate, imaging the droplet with a measurement part spaced apart from the droplet in one direction, measuring a distance between the droplet and the measurement part, and correcting an area of the droplet.

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

Abstract: An ink droplet volume measurement apparatus including an oblique illumination configured to emit light at a first angle to ink droplets deposited onto a substrate, an imaging device configured to obtain planar images of the ink droplets and a shadow of the ink droplets generated by the emitted light and a calculation device configured to calculate a volume of the ink droplets deposited onto the substrate based on the planar images of the ink droplets and the shadow of the ink droplets.

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

Abstract: Provided is a display panel including a base layer including an active region, and a peripheral region adjacent to the active region, a light-emitting element layer above the base layer, and an encapsulation layer above the light-emitting element layer, and including a first inorganic layer, a second inorganic layer above the first inorganic layer, an organic layer above the second inorganic layer, and a third inorganic layer above the organic layer, wherein the second inorganic layer includes a non-metal oxide and wherein the second inorganic layer and the organic layer overlap the active region.

Abstract: A transistor may include a first insulating layer disposed on a substrate, a dummy layer disposed on the first insulating layer, a semiconductor layer disposed on the dummy layer, the semiconductor layer including a first area, a second area, and a channel area disposed between the first and second areas, a second insulating layer disposed on the semiconductor layer, a gate electrode overlapping the channel area with the second insulating interposed therebetween, a third insulating layer disposed over the gate electrode, a first electrode disposed on the third insulating layer, the first electrode being electrically connected to the first area, and a second electrode disposed on the third insulating layer spaced apart from the first electrode, the second electrode being electrically connected to the second area. The dummy layer may include indium oxide, and the semiconductor layer may include indium gallium zinc oxide.

Abstract: A tantalum capacitor includes a sintered tantalum body including tantalum powder, a conductive polymer layer disposed on the sintered tantalum body and including a first filler, a carbon layer disposed on the conductive polymer layer; and a tantalum body including a tantalum wire penetrating through at least a portion of each of the sintered tantalum body and the conductive polymer layer in a first direction. A ratio of an area of the first filler to an area of the conductive polymer layer is greater than 0.38 in a first cross-section partially overlapping the sintered tantalum body, among cross-sections perpendicular to the first direction.

Abstract: A battery pack includes a pair of battery modules having at least one pair of first grip grooves and at least one connector formed at a top thereof, a supporting plate coupled to a bottom of the pair of battery modules and fixed to the ground and a BMS assembly having a guide protrusion inserted into the first grip groove and coupled to the pair of battery modules in a plug-in type by means of the connector.

Abstract: A transistor may include a first insulating layer disposed on a substrate, a dummy layer disposed on the first insulating layer, a semiconductor layer disposed on the dummy layer, the semiconductor layer including a first area, a second area, and a channel area disposed between the first and second areas, a second insulating layer disposed on the semiconductor layer, a gate electrode overlapping the channel area with the second insulating interposed therebetween, a third insulating layer disposed over the gate electrode, a first electrode disposed on the third insulating layer, the first electrode being electrically connected to the first area, and a second electrode disposed on the third insulating layer spaced apart from the first electrode, the second electrode being electrically connected to the second area. The dummy layer may include indium oxide, and the semiconductor layer may include indium gallium zinc oxide.

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

Abstract: Present disclosure provides a cooling device with safety features and methods for controlling temperature of the cooling device for safe cooling of target surface.

Abstract: A display device according to an embodiment includes a pixel electrode disposed on a substrate, a pixel defining layer disposed on the pixel electrode and including a pixel opening overlapping the pixel electrode, an encapsulation layer disposed on the pixel defining layer, a sensing electrode portion disposed on the encapsulation layer, a sensing insulating layer overlapping at least part of the sensing electrode portion, and an adhesive layer disposed on the sensing insulating layer. The sensing insulating layer includes a first region overlapping the sensing electrode portion, and a second region overlapping the pixel opening. A refractive index of the adhesive layer is less than a refractive index of the sensing insulating layer.