Patents by Inventor Jae Bum Yu

Jae Bum Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7754610
    Abstract: A method of plasma etching tungsten silicide over polysilicon particularly useful in fabricating flash memory having both a densely packed area and an open (iso) area requiring a long over etch due to microloading. Wafer biasing is decreased in the over etch. The principal etchant include NF3 and Cl2. Argon is added to prevent undercutting at the dense/iso interface. Oxygen and nitrogen oxidize any exposed silicon to increase etch selectivity and straightens the etch profile. SiCl4 may be added for additional selectivity.
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: July 13, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Kyeong-Tae Lee, Jinhan Choi, Bi Jang, Shashank C. Deshmukh, Meihua Shen, Thorsten B. Lill, Jae Bum Yu
  • Publication number: 20070281479
    Abstract: A method of plasma etching tungsten silicide over polysilicon particularly useful in fabricating flash memory having both a densely packed area and an open (iso) area requiring a long over etch due to microloading. Wafer biasing is decreased in the over etch. The principal etchant include NF3 and Cl2. Argon is added to prevent undercutting at the dense/iso interface. Oxygen and nitrogen oxidize any exposed silicon to increase etch selectivity and straightens the etch profile. SiCl4 as an example of a silicon and chlorine containing passivating gas may be added for additional selectivity.
    Type: Application
    Filed: August 31, 2006
    Publication date: December 6, 2007
    Applicant: Applied Materials, Inc.
    Inventors: Kyeong-Tae Lee, Jinhan Choi, Bi Jang, Shashank C. Deshmukh, Meihua Shen, Thorsten B. Lill, Jae Bum Yu