Abstract: A memory device capable of detecting its failure, the memory device includes a data input section for receiving data applied from an external part of the memory device; a latch section for receiving and storing therein the data which have passed through the data input section; memory cell arrays for storing therein the data which have passed through the data input section; and a data compressor for determining whether or not the data stored in the latch section and the data stored in the memory cell arrays are identical to each other.

Abstract: The present invention relates to a flat panel display having integral fastening structures for holding the top and bottom chassis. The flat panel display comprises a mold frame enclosing an internal storage space and having a plurality of fastening hooks protruding outward from a side surface thereof; a bottom chassis having a plurality of first coupling openings fastened to the plurality of fastening hooks of the mold frame; and a top chassis having a fastening structure fastened to the bottom chassis, wherein the fastening structure is formed on the area where the mold frame is fastened to the bottom chassis.

Abstract: Disclosed herein is a shaft and hub coupling structure for recliners. The shaft and hub coupling structure of the present invention ensures stable and silent motion of the shaft and the hub, maintains sufficient strength of the shaft, and makes it possible for a process of coupling the shaft to the hub to be easily and correctly conducted.

Abstract: A non-volatile memory device includes a memory cell array including memory cells, each memory cell being defined at an intersection of a word line and a bit line. A page buffer is coupled to the memory cell array via a sensing line. The page buffer comprises a first latch unit including a first latch circuit and coupled to the sensing line, the first latch unit being configured to be activated during a copy-back program operation to read data stored in a first memory cell and reprogram the data to a second memory cell that is different from the first memory cell.

Abstract: A memory device capable of detecting its failure, the memory device includes a data input section for receiving data applied from an external part of the memory device; a latch section for receiving and storing therein the data which have passed through the data input section; memory cell arrays for storing therein the data which have passed through the data input section; and a data compressor for determining whether or not the data stored in the latch section and the data stored in the memory cell arrays are identical to each other.

Abstract: Provided is directed to a data input apparatus and a method of DDR SDRAM which can improve reliability of a circuit operation by transferring data inputted after applying a data strobe signal DQS to an input/output bus GIO by a exact timing, by means of correctly arranging the data strobe signal DQS and a data input strobe pulse dinstbp regardless of time difference of inputting the data strobe signal DQS after a write command, in response to generating a data input strobe pulse dinstbp used to load data to the input/output bus GIO as a data strobe pulse dsp identical to the data strobe signal DQS.