Abstract: An air purification module comprises a housing having an interior space provided with an air inlet and an air outlet, and an axial type blowing fan, mounted in the housing, for moving air from the air inlet to the air outlet. The air purification module further includes an air purifying unit, provided on a flow path of the air, for purifying the air and a guide for reducing the flow rate of the air between the blowing fan and the air purifying unit. The air purifying unit includes a filter provided between the blowing fan and the air outlet and a light source unit for providing light to the filter.

Abstract: An air purification module for purifying air includes a photocatalyst filter and a light source unit sequentially arranged in a selected direction. The light source unit is spaced apart from the photocatalyst filter to provide light to the photocatalyst filter and includes a substrate and a light source disposed on the substrate. The substrate includes at least one aperture to control a flow channel and a flow velocity of air so as to improve air purification effects through the photocatalyst filter when the air flows from the substrate towards the photocatalyst filter.

Abstract: Methods of metal assisted chemical etching III-V semiconductors are provided. The methods can include providing an electrically conductive film pattern disposed on a semiconductor substrate comprising a III-V semiconductor. At least a portion of the III-V semiconductor immediately below the conductive film pattern may be selectively removed by immersing the electrically conductive film pattern and the semiconductor substrate into an etchant solution comprising an acid and an oxidizing agent having an oxidation potential less than an oxidation potential of hydrogen peroxide. Such methods can form high aspect ratio semiconductor nanostructures.

Abstract: Semiconductor structures for laser devices are provided. The semiconductor structures have a quantum cascade laser structure comprising an electron injector, an active region, and an electron extractor. The active region comprises an injection barrier, a multiquantum well structure, and an exit barrier. The multiquantum well structure can comprise a first barrier, a first quantum well, a second barrier, a second quantum well, and a third barrier. The energies of the first and second barrier are less than the energy of the third barrier. The energy difference between the energy of the second barrier and the energy of the third barrier can be greater than 150 meV and the ratio of the energy of the third barrier to the energy of the second barrier can be greater than 1.26.

Abstract: Semiconductor structures for laser devices are provided. The semiconductor structures have a quantum cascade laser structure comprising an electron injector, an active region, and an electron extractor. The active region comprises an injection barrier, a multiquantum well structure, and an exit barrier. The multiquantum well structure can comprise a first barrier, a first quantum well, a second barrier, a second quantum well, and a third barrier. The energies of the first and second barrier are less than the energy of the third barrier. The energy difference between the energy of the second barrier and the energy of the third barrier can be greater than 150 meV and the ratio of the energy of the third barrier to the energy of the second barrier can be greater than 1.26.

Abstract: Methods of metal assisted chemical etching III-V semiconductors are provided. The methods can include providing an electrically conductive film pattern disposed on a semiconductor substrate comprising a III-V semiconductor. At least a portion of the III-V semiconductor immediately below the conductive film pattern may be selectively removed by immersing the electrically conductive film pattern and the semiconductor substrate into an etchant solution comprising an acid and an oxidizing agent having an oxidation potential less than an oxidation potential of hydrogen peroxide. Such methods can form high aspect ratio semiconductor nanostructures.

Abstract: Semiconductor structures and laser devices including the semiconductor structures are provided. The semiconductor structures have a quantum cascade laser (QCL) structure including an electron injector, an active region, and an electron extractor. The active region of the semiconductor structures includes a configuration of quantum wells and barriers that virtually suppresses electron leakage, thereby providing laser devices including such structures with superior electro-optical characteristics.

Abstract: Semiconductor structures and laser devices including the semiconductor structures are provided. The semiconductor structures have a quantum cascade laser (QCL) structure including an electron injector, an active region, and an electron extractor. The active region of the semiconductor structures includes a configuration of quantum wells and barriers that virtually suppresses electron leakage, thereby providing laser devices including such structures with superior electro-optical characteristics.

Abstract: The present invention relates, in general, to a Radio Frequency Identification (RFID) system for reading or recording RFID tag information using radio frequencies and, more particularly, to an intelligent RFID system for low-powered reader-tag communication, which includes an RF shower system (370) that radiates a high power electromagnetic wave in a high frequency band to activate the passive tags having no batteries and that has predetermined communication means for reading information from a plurality of passive tags existing in a radiation zone having a predetermined size, storing the read tag information, and providing the stored tag information when a request is received from an RFID reader (310).

Abstract: Methods of metal assisted chemical etching III-V semiconductors are provided. The methods can include providing an electrically conductive film pattern disposed on a semiconductor substrate comprising a III-V semiconductor. At least a portion of the III-V semiconductor immediately below the conductive film pattern may be selectively removed by immersing the electrically conductive film pattern and the semiconductor substrate into an etchant solution comprising an acid and an oxidizing agent having an oxidation potential less than an oxidation potential of hydrogen peroxide. Such methods can form high aspect ratio semiconductor nanostructures.