Abstract: A semiconductor integrated circuit device may include a semiconductor substrate, a static memory cell on the semiconductor substrate, a tensile stress film on the pull-down transistors, and a compressive stress film on the pass transistors. The static memory cell may include multiple pull-up transistors and pull-down transistors, which form a latch, and multiple pass transistors may be used to access the latch.

Abstract: A semiconductor integrated circuit device may include a semiconductor substrate, a static memory cell on the semiconductor substrate, a tensile stress film on the pull-down transistors, and a compressive stress film on the pass transistors. The static memory cell may include multiple pull-up transistors and pull-down transistors, which form a latch, and multiple pass transistors may be used to access the latch.

Abstract: Bonding pads for integrated circuits include first and second spaced apart conductive layers, a third continuous conductive layer between the first and second spaced apart and an array of unaligned spaced apart insulating islands in the third continuous conductive layer and extending therethrough such that sidewalls of the array of insulating islands are surrounded by the third continuous conductive layer, rows of unaligned spaced apart insulating islands. The array can include rows of unaligned spaced apart insulating islands and columns of unaligned spaced apart insulating islands. The array of unaligned spaced apart insulating islands can also include a first insulating island having a first edge in a first direction and a second insulating island, adjacent to the first insulating island in the first direction having a second edge in the first direction that is unaligned with first edge.

Abstract: Bonding pads for integrated circuits include first and second spaced apart conductive layers, a third continuous conductive layer between the first and second spaced apart and an array of unaligned spaced apart insulating islands in the third continuous conductive layer and extending therethrough such that sidewalls of the array of insulating islands are surrounded by the third continuous conductive layer, rows of unaligned spaced apart insulating islands. The array can include rows of unaligned spaced apart insulating islands and columns of unaligned spaced apart insulating islands. The array of unaligned spaced apart insulating islands can also include a first insulating island having a first edge in a first direction and a second insulating island, adjacent to the first insulating island in the first direction having a second edge in the first direction that is unaligned with first edge.