Abstract: Provided is a composition containing myricetin or a pharmaceutically available salt thereof as an active ingredient. The composition increases exercise capacity and enhances physical strength. In addition, the composition prevents aging and recovers from fatigue. The composition increases energy efficiency by improving the function of mitochondria, and also has an antiobesity effect by increasing energy consumption. Therefore, the composition may be significantly applied in a functional food or medicine field.

Abstract: Provided is a composition containing myricetin or a pharmaceutically available salt thereof as an active ingredient. The composition increases exercise capacity and enhances physical strength. In addition, the composition prevents aging and recovers from fatigue. The composition increases energy efficiency by improving the function of mitochondria, and also has an antiobesity effect by increasing energy consumption. Therefore, the composition may be significantly applied in a functional food or medicine field.

Abstract: A method of correcting a pattern critical dimension of a photomask includes forming a phase shift layer and a light blocking pattern on a substrate, measuring a critical dimension (CD) of the light blocking pattern, and forming a negative resist pattern that has a relatively smaller CD than the CD of the light blocking pattern on the light blocking pattern, and correcting the CD of the light blocking pattern by etching the light blocking pattern exposed by the negative resist pattern. The method may further include forming a phase shift pattern by etching the phase shift layer exposed by the corrected light blocking pattern and the negative resist pattern as an etch mask, and removing the negative resist pattern and the corrected light blocking pattern.

Abstract: Disclosed herein is a method of correcting a pattern critical dimension of a photomask. The method may include forming a phase shift layer and a light blocking pattern on a substrate, measuring a critical dimension (CD) of the light blocking pattern, and forming a negative resist pattern that has a relatively smaller CD than the CD of the light blocking pattern on the light blocking pattern, and correcting the CD of the light blocking pattern by etching the light blocking pattern exposed by the negative resist pattern. The method may further include forming a phase shift pattern by etching the phase shift layer exposed by the corrected light blocking pattern and the negative resist pattern as an etch mask, and removing the negative resist pattern and the corrected light blocking pattern.

Abstract: A method of forming a photomask of a semiconductor device includes depositing a first phase shift layer, a light blocking layer, and a second phase shift layer on a transparent substrate, and then a first photoresist pattern is formed to expose a region on an upper surface of the second phase shift layer. Then, the exposed region is etched by using the first photoresist pattern as a mask to form a second phase shift pattern, and the light blocking layer is etched by using the second phase shift pattern as a mask to form a light blocking pattern. Thereafter, a second photoresist pattern is formed on the transparent substrate to define a phase shift region and a light transmitting region. The first phase shift layer is etched by using the second photoresist pattern as a mask to form a first phase shift pattern. Then, the light blocking pattern of the phase shift region is etched to form a phase shift mask pattern.