Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: An electronic device structure having a shielding structure includes a substrate with an electronic component electrically connected to the substrate. The shielding structure includes conductive spaced-apart pillar structures that have proximate ends connected to the substrate and distal ends spaced apart from the substrate, and that are laterally spaced apart from the first electronic component. In one embodiment, the conductive pillar structures are conductive wires attached at one end to the substrate with an opposing end extending away from the substrate so that the conductive wires are provided generally perpendicular to the substrate. A package body encapsulates the electronic component and the conductive spaced-apart pillar structures. In one embodiment, the shielding structure further includes a shielding layer disposed adjacent to the package body, which is electrically connected to the conductive spaced-apart pillar structures.

Abstract: A semiconductor memory device includes a gate stack structure including insulating layers, a lower selection line and word lines, the word lines including a first word line adjacent to the lower selection line and a second word line on the first word line, a memory channel structure penetrating the gate stack structure, a plurality of first contact plugs electrically connected to the first word line, a plurality of second contact plugs electrically connected to the second word line, a first conductive line connected to the plurality of first contact plugs, and a second conductive line connected to one of the plurality of second contact plugs.

Abstract: An electroluminescent device includes a quantum dot layer disposed between a first electrode and a second electrode, and an electron transport layer disposed between the quantum dot layer and the second electrode; wherein the quantum dot layer is configured to emit a first light, the quantum dot layer including first quantum dots, wherein the first quantum dots include a first semiconductor nanocrystal, wherein the electron transport layer includes zinc oxide nanoparticles, wherein the electroluminescent device further comprises a first layer between the quantum dot layer and the electron transport layer, the first layer including inorganic nanoparticles, wherein the inorganic nanoparticles has a different composition from the zinc oxide nanoparticles and the first quantum dots, and wherein the inorganic nanoparticles comprises a metal chalcogenide having a bandgap energy of greater than or equal to about 2.9 electron volts (eV) and less than or equal to about 10 eV.

Abstract: Various example embodiments described herein relate to a sensor assembly. The sensor assembly includes a substrate and a disk for providing parallel gas flow to a plurality of sensing dies. The substrate defines a plurality of openings and an inlet conduit. The plurality of openings is adapted to receive at least one sensing die of the plurality of sensing dies. The inlet conduit is defined between a first end of the substrate and a second end of the substrate. The first end of the substrate is adapted to receive an inflow of a gas. The disk is adapted to be positioned below the substrate so that a top portion of the disk is exposed to the second end of the inlet conduit and the disk defines a passage for the gas to uniformly flow from the second end to a sensor head of the at least one sensing die.

Abstract: The present invention relates to a novel anthracene derivative, a process for preparation thereof, and an organic electronic device using the same. The anthracene derivative according to the present invention can serve as a hole injecting material, a hole transporting material, an electron injecting material, an electron transporting material, or a light emitting material, and particularly as a light emitting host or dopant, especially as a green host or dopant singly, in an organic electronic device including an organic light emitting device. The organic electronic device according to the present invention exhibits excellent characteristics in efficiency, drive voltage, life time, and stability.