Abstract: A substrate processing apparatus includes: a process chamber including a chamber lid and a chamber body to provide a reaction space therein; a source electrode in the process chamber; a radio frequency (RF) power source for supplying an RF power to the source electrode; a feeding line connecting the source electrode and the RF power source; and a shielding part wrapping the feeding line to block an electric field.

Abstract: A gas distribution device for a substrate treating apparatus includes a plurality of plasma source electrodes having a first side surface; a plurality of plasma ground electrodes having a second side surface facing the first side surface, the plurality of plasma ground electrodes being alternately arranged with the plurality of plasma source electrodes; and a first gas providing part disposed at each plasma source electrode and including a first space, a plurality of first through-holes in communication with the first space for providing a first process gas between one of the plurality of plasma source electrodes and a corresponding ones of the plurality of plasma ground electrodes, and a first discharging portion at the first side surface.

Abstract: A substrate processing apparatus includes: a process chamber including a chamber lid and a chamber body to provide a reaction space therein; a source electrode in the process chamber; a radio frequency (RF) power source for supplying an RF power to the source electrode; a feeding line connecting the source electrode and the RF power source; and a shielding part wrapping the feeding line to block an electric field.

Abstract: A gas distribution device for a substrate treating apparatus includes a plurality of plasma source electrodes having a first side surface; a plurality of plasma ground electrodes having a second side surface facing the first side surface, the plurality of plasma ground electrodes being alternately arranged with the plurality of plasma source electrodes; and a first gas providing part disposed at each plasma source electrode and including a first space, a plurality of first through-holes in communication with the first space for providing a first process gas between one of the plurality of plasma source electrodes and a corresponding ones of the plurality of plasma ground electrodes, and a first discharging portion at the first side surface.

Abstract: A substrate processing apparatus includes a process chamber having a chamber lid and a chamber body to provide a reaction space and a gas distributing means including a plate and an injection part in the process chamber. The injection part includes a plurality of through holes in the plate and a discharge portion capable of being in fluid communication with the plurality of through holes. The discharge portion has a matrix shape and provides a space where a plasma is discharged. The apparatus additionally includes a susceptor in the process chamber. The susceptor faces the gas distributing means.

Abstract: An apparatus for processing a substrate includes: a process chamber providing a reaction space by a combination of a lid and a body; a susceptor in the reaction space and having a substrate thereon; a plurality of plasma source electrodes over the reaction space; a plurality of first lower protruding portions under the lid; and a plurality of first gas injecting means corresponding to the plurality of plasma source electrodes and a plurality of second gas injecting means alternately disposed with the plurality of first gas injecting means.

Abstract: A substrate treatment apparatus includes a process chamber providing a reaction region and including a body and a lid, the lid having a plurality of openings, a plurality of insulating plates sealing the plurality of openings, respectively, a plurality of antennas over the plurality of insulating plates, respectively, a gas injection unit over the lid and the plurality of insulating plates, and a substrate holding unit in the reaction region, wherein a substrate is disposed on the substrate holding unit.