Abstract: There is provided a light emitting diode package, including a package body including a recess portion having a housing space and a lead frame mounted on the recess portion to be exposed; a light emitting diode chip mounted to be electrically connected to the lead frame; and a position indicator formed on the lead frame and guiding the mounting position of the light emitting diode chip.

Abstract: A method of manufacturing a vertical GaN-based LED includes forming a nitride-based buffer layer on a silicon substrate; sequentially forming a p-type GaN layer, an active layer, and an n-type GaN layer on the nitride-based buffer layer; forming an n-electrode on the n-type GaN layer; forming a plating seed layer on the n-electrode; forming a structure supporting layer on the plating seed layer; removing the silicon substrate through wet etching and forming roughness on the surface of the p-type GaN layer through over-etching; and forming a p-electrode on the p-type GaN layer having the roughness formed.

Abstract: There is provided a light emitting diode package, including a package body including a recess portion having a housing space and a lead frame mounted on the recess portion to be exposed; a light emitting diode chip mounted to be electrically connected to the lead frame; and a position indicator formed on the lead frame and guiding the mounting position of the light emitting diode chip.

Abstract: The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.