Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract: A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.

Abstract: A liquid crystal display device includes a liquid crystal panel; a plurality of light emitting diode units to supply light to the liquid crystal panel; and a scan line and a light emission data line connected to the LED unit, wherein the scan line and the light emission data line transfer a scan signal and a light emission data current, respectively, wherein the LED unit includes: a switching circuit that is connected to the scan line and the light emission data line; a current mirror circuit that is connected to the switching circuit, and that outputs a light emission current in response to the light emission data current; and an LED that emits the light in response to the light emission current.

Abstract: The present invention relates to a dark neutral gray glass composition with a low transmittance, and a glass formed therefrom, and more specifically, to a dark neutral gray glass composition with a low transmittance and a low color purity, wherein an appropriate amount of Fe2O3, CoO and Se are used as a colorant component, and the FeO content in Fe2O3 and the CoO and Se relative content are delimited by a predetermined range, so as to lower the transmittance of visible rays, solar energy and ultraviolet rays and color purity, thereby protecting privacy in a vehicle, a building and the like, enabling harmony among the various colors thereof, and protecting an interior material and people from ultraviolet rays, and to a glass formed therefrom.

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract: A semiconductor memory device includes a memory block configured to include memory cells coupled to word lines and a peripheral circuit configured to perform a first program operation, a program verifying operation and a second program verifying operation for memory cells coupled to a word line selected from the word lines, and supply program allowable voltages having different levels to selected bit lines of program allowable cells located between program inhibition cells in the first program operation and the second program operation.

Abstract: Disclosed are a pulley structure and a damper pulley that prevent corrosion. The pulley structure may include a hub part that is fitted on a crankshaft rotated by power from an engine and rotates with the crankshaft and a pulley part coupled with the hub part to rotate with the hub part and connected with a power transmission member. The hub part may include a pulley contact surface facing the pulley part, and pulley coupling portions formed at the pulley contact surface to secure coupling members. The pulley part may include a hub contact surface facing the pulley contact surface of the hub part, hub coupling portions coupled to the pulley coupling portions by securing the coupling members, and coupling grooves recessed from the hub coupling portions to insert the coupling members. Washers made of an insulator may be fitted on the coupling members between the pulley coupling portions and the hub coupling portions.

Abstract: Several embodiments of photolithography systems and associated methods of alignment correction are disclosed herein. In one embodiment, a method for correcting alignment errors in a photolithography system includes detecting a first alignment error at a first location of a first microelectronic substrate and a second alignment error at a second location of a second microelectronic substrate. The second location generally corresponds to the first location. The method also includes deriving a statistical dispersion between the first alignment error and the second alignment error and associating the first and second locations with an alignment procedure based on the derived statistical dispersion.

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

Abstract: There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof.

Abstract: A thin film transistor array substrate capable of reducing degradation of a device due to degradation of an oxide semiconductor pattern and a method of fabricating the same are provided. The thin film transistor array substrate may include an insulating substrate on which a gate electrode is formed, a gate insulating film formed on the insulating substrate, an oxide semiconductor pattern disposed on the gate insulating film, an anti-etching pattern formed on the oxide semiconductor pattern, and a source electrode and a drain electrode formed on the anti-etching pattern. The oxide semiconductor pattern may include an edge portion positioned between the source electrode and the drain electrode, and the edge portion may include at least one conductive region and at least one non-conductive region.

Abstract: A light-emitting device includes a nitride-based semiconductor reflector. The light-emitting device includes a nitride-based reflector and a light-emitting unit that is disposed on the nitride-based reflector. The nitride-based reflector includes undoped nitride semiconductor layers and heavily-doped nitride semiconductor layers that are alternately stacked. The heavily doped nitride semiconductor layers are etched at their edges to form air layers between adjacent undoped nitride semiconductor layers.

Abstract: The present invention provides a color mixing lens which can improve color reproducibility, be made slim and adjust an emission pattern; and a liquid crystal display device having the same. The color mixing lens includes a light receiving portion having at least two light emission diodes positioned at a side for emitting color lights different from each other and light receiving recesses for placing the light emission diodes therein respectively, a color mixing portion formed on the light receiving portion for mixing the lights from the light emission diodes into a white color light, and a light emission portion formed on the color mixing portion for emitting the white light from the color mixing portion through a side thereof.

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

Abstract: Provided are a reflective structure, a display apparatus including the reflective structure, and methods of manufacturing the reflective structure and the display apparatus. The reflective structure may include a reflective layer having a multiple uneven structure. The reflective layer may have a curved surface as a result of a plurality of first uneven portions, and wherein the curved surface may has a plurality of second uneven portions having a scale less than that of the first uneven portions. The plurality of first uneven portions may have a micro-scale size, and the plurality of second uneven portions may have a nano-scale size. The reflective layer may be arranged on a lower structure including a plurality of nanoparticles. A flexible material layer may be formed on the reflective layer.

Abstract: An ultraviolet (UV) light-emitting diode including an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, a p-type semiconductor layer disposed on the active layer and formed of p-type AlGaN, and a p-type graphene layer disposed on the p-type semiconductor layer and formed of graphene doped with a p-type dopant. The UV light-emitting diode has improved light emission efficiency by lowering contact resistance with the p-type semiconductor layer and maximizing UV transmittance.

Abstract: Provided are a display substrate, a display device, and a method of manufacturing the display substrate. The display substrate includes: a substrate in which a pixel region is defined; a gate electrode and a gate pad are formed on the substrate; a gate insulating layer formed on the gate electrode and the gate pad; a buffer layer pattern overlaps the gate electrode and is formed on the gate insulating layer; an insulating film pattern formed on the buffer layer pattern; an oxide semiconductor pattern formed on the insulating film pattern; a source electrode formed on the oxide semiconductor pattern; and a drain electrode formed on the oxide semiconductor pattern and is separated from the source electrode.

Abstract: A display device includes a waveguide with a light propagating therein, and a panel including a first organic light-emitting device in a sub-pixel region and a second organic light-emitting device in a sensing region adjacent to the sub-pixel region, the first organic light-emitting device for displaying a data on the panel, and the second light-emitting device responsive to a scattering of the light from the waveguide for outputting a signal indicative of a contact on the waveguide.

Abstract: Disclosed are a memory system, a semiconductor memory device and a method of operating the same. The memory system includes: a memory controller to output a command, address and data; and a semiconductor memory device to store at least one page data in each memory cell in response to the command, the address and the data, the memory controller to separately output first address used for determining the at least one page data from the data and second address used for determining a word line coupled to at least one memory cell.

Abstract: Disclosed is an LCD device which facilitates to improve transmittance for each colored light by a design capable of realizing an optimal cell gap for each of sub-pixels, and a method for manufacturing the same. The LCD device comprises first and second substrates confronting each other; a liquid crystal layer between the first and second substrates; and first, second, and third sub-pixels, wherein a cell gap of the first sub-pixel is larger than a cell gap of the third sub-pixel.