Patents by Inventor Jae-duck JEON

Jae-duck JEON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POWER DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20190123144
    Abstract: A power device having fast switching characteristic, while keeping EMI noise to a minimum and a method of fabricating the same are provided. The power device includes a first field stop layer having a first conductivity type, a first drift region formed on the first field stop layer and having a first conductivity type in an impurity concentration that is lower than the first field stop layer, a buried region formed on the first drift region and having the first conductivity type in an impurity concentration that is higher than the first drift region, a second drift region formed on the buried region, a power device cell formed at an upper portion of the second drift region, and a collector region formed below the first field stop layer.
    Type: Application
    Filed: December 11, 2018
    Publication date: April 25, 2019
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Jae-duck JEON, Young-chul KIM, Kyeong-seok PARK, Jin-myung KIM, Young-chul CHOI
  • Power device configured to reduce electromagnetic interference (EMI) noise
    Patent number: 10181513
    Abstract: A power device having fast switching characteristic, while keeping EMI noise to a minimum and a method of fabricating the same are provided. The power device includes a first field stop layer having a first conductivity type, a first drift region formed on the first field stop layer and having a first conductivity type in an impurity concentration that is lower than the first field stop layer, a buried region formed on the first drift region and having the first conductivity type in an impurity concentration that is higher than the first drift region, a second drift region formed on the buried region, a power device cell formed at an upper portion of the second drift region, and a collector region formed below the first field stop layer.
    Type: Grant
    Filed: June 17, 2015
    Date of Patent: January 15, 2019
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Jae-duck Jeon, Young-chul Kim, Kyeong-seok Park, Jin-myung Kim, Young-chul Choi
  • POWER DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20150287786
    Abstract: A power device having fast switching characteristic, while keeping EMI noise to a minimum and a method of fabricating the same are provided. The power device includes a first field stop layer having a first conductivity type, a first drift region formed on the first field stop layer and having a first conductivity type in an impurity concentration that is lower than the first field stop layer, a buried region formed on the first drift region and having the first conductivity type in an impurity concentration that is higher than the first drift region, a second drift region formed on the buried region, a power device cell formed at an upper portion of the second drift region, and a collector region formed below the first field stop layer.
    Type: Application
    Filed: June 17, 2015
    Publication date: October 8, 2015
    Inventors: Jae-duck JEON, Young-chul KIM, Kyeong-seok PARK, Jin-myung KIM, Young-chul CHOI