Abstract: A semiconductor device includes a substrate, a first recess formed in the substrate, a first source/drain filling the first recess, a vertical metal resistor on the first source/drain, and an insulating liner separating the metal resistor from the first source/drain, with the vertical metal resistor being between two gate electrodes.

Abstract: The present disclosure relates to a radar apparatus and an antenna system for the radar apparatus. A first transmitting antenna group and a first receiving antenna group are constituted by elongating some of a plurality of transmitting antennas and a plurality of receiving antennas in a first direction of vertical directions, a second transmitting antenna group and a second receiving antenna group are constituted by elongating the other antennas in a second direction opposite to the first direction, transmitting antennas to transmit transmission signals and receiving antennas to receive reflection signals reflected from an object are appropriately selected, thereby being able to improve horizontal and vertical angular resolving power in both of mid/long-range sensing and short-range sensing.

Abstract: The present provides a radar apparatus and an antenna for the radar apparatus. Further, a first transmitting antenna group and a first receiving antenna group are constituted by elongating some of a plurality of transmitting antennas and a plurality of receiving antennas in a first direction of vertical directions, a second transmitting antenna group and a second receiving antenna group are constituted by elongating the other antennas in a second direction opposite to the first direction, transmitting antennas to transmit transmission signals and receiving antennas to receive reflection signals reflected from an object are appropriately selected, thereby being able to improve horizontal and vertical angular resolving power in both of mid/long-range sensing and short-range sensing.

Abstract: Disclosed herein are a method and device for sensing a road environment based on a frequency modulated continuous wave (FMCW) radar. A method for detecting a road environment based on the FMCW radar includes the steps of: the FMCW radar performing a first scan to acquire a first frequency spectrum of beat signals, and shifting the first frequency spectrum based on first velocity information of a vehicle on performing the first scan; the FMCW radar performing a second scan to acquire a second frequency spectrum of beat signals, and shifting the second frequency spectrum based on second velocity information of the vehicle on performing the second scan; acquiring correlation information between the shifted first frequency spectrum and the shifted second frequency spectrum; and comparing the correlation information with a set threshold value and detecting the road environment.

Abstract: A semiconductor device includes a substrate including an active region, a gate structure, source/drain regions, ones of the source/drain regions having an upper surface in which a recessed region is formed, a contact plug on the source/drain regions and extending in a direction substantially perpendicular to an upper surface of the substrate from an interior of the recessed region, a metal silicide film on an internal surface of the recessed region and including a first portion between a bottom surface of the recessed region and a lower surface of the contact plug and a second portion between a side wall of the recessed region and a side surface of the contact plug, and a metal layer connected to an upper portion of the metal silicide film and on a side surface of a region of the contact plug.

Abstract: A nonvolatile memory device includes a memory cell array including a plurality of memory cells, a first metal layer, a peripheral circuit configured to control the memory cell array, a second metal layer, and a pad. The first metal layer is disposed on the memory cell array and includes a plurality of cell region interconnections connected to the memory cell array. The second metal layer is disposed on the peripheral circuit and includes a plurality of peripheral region interconnections connecting the peripheral circuit and the plurality of cell region interconnections. The pad is disposed on the second metal layer and exchanges data, an address, or a command with the peripheral circuit during operation of the device. The second metal layer is lower than the first metal layer relative to a substrate of the device.

Abstract: Disclosed herein is a vehicle radar. The radar may include Tx antennas for a middle range, Tx antennas for a short range, Rx antenna columns for a middle range each configured to have a long shape vertically and be horizontally disposed, Rx antenna columns for a short range each configured to have a long shape vertically and be disposed between some of the Rx antenna columns for a middle range, and a control unit configured to process signals of radio waves that are reflected from a specific object after the radio waves are radiated by the Tx antennas for the middle range and that are received by the Rx antenna columns for the middle range or signals of radio waves that are reflected from a specific object after the radio waves are radiated by the Tx antennas for the short range and that are received by the Rx antenna columns for the short range.

Abstract: Semiconductor devices may include a structure on a substrate, an insulating interlayer, a metal silicide pattern, a first barrier pattern, a second barrier pattern and a metal pattern. The structure may include silicon. The insulating interlayer may include a contact hole exposing a surface of the structure. The metal silicide pattern may be in a lower portion of the contact hole, and the metal silicide pattern may directly contact the exposed surface of the structure. The first barrier pattern may directly contact an upper surface of the metal silicide pattern and a sidewall of the contact hole. The first barrier pattern may include a metal nitride. The second barrier pattern may be formed on the first barrier pattern. The second barrier pattern may include a metal nitride. The metal pattern may be formed on the second barrier pattern. The metal pattern may be in the contact hole.

Abstract: A method for verifying mask data in a computing device includes receiving layout data, receiving mask data, determining an interaction number between a pattern corresponding to the layout data and a pattern corresponding to the mask data, and detecting an error of the mask data based on the interaction number.

Abstract: A method and system for verifying a layout of an integrated circuit (IC) is disclosed. The IC may include a plurality of strings each including a plurality of memory cells which are vertically stacked on a substrate. The method may include receiving schematic data of the IC including instances of a string symbol and layout data, preparing a layout versus schematic (LVS) rule file in which a string device is defined, and performing LVS verification.

Abstract: Disclosed herein are a method and device for sensing a surrounding environment based on a frequency modulated continuous wave (FMCW) radar. The method for detecting a target based on an FMCW radar includes the steps of: the FMCW radar transmitting a sensing signal for detection of the target, and receiving a response signal in response to the sensing signal; the FMCW radar performing a signal processing on the response signal, and generating a frequency spectrum of a beat signal; the FMCW radar determining a detection frequency band for detection of the target within a valid frequency band of the frequency spectrum; the FMCW radar determining a threshold value to determine a target detection peak value for detection of the target among peak values of the frequency spectrum; and the FMCW radar detecting the target based on the detection frequency band and the threshold value.

Abstract: The present invention relates to a composition for forming a hard coating layer, which may form a hard coating layer having significantly improved hardness as well as excellent flexibility such that curling is minimized.

Abstract: Provided are semiconductor devices including a peripheral region and a cell region stacked thereon and a method of fabricating the same. The semiconductor device may include a peripheral region including a lower substrate and a peripheral circuit provided thereon and a cell region including an upper substrate and a cell array provided thereon. The cell region may be stacked on the peripheral region. When an operation signal is applied to the cell region from the peripheral region, at least a portion of the peripheral and cell regions may be used as a ground pattern applied with a ground signal, thereby being in an electrical ground state.

Abstract: Disclosed herein is a frequency modulated continuous wave (FMCW) radar device, including: a continuous wave (CW) signal generator configured to generate a transmit (Tx) CW signal; a radio frequency (RF) transmitter configured to transmit the generated Tx CW signal as an RF signal through a Tx antenna; an RF receiver configured to receive a CW signal which is reflected and returned from a forward object after the Tx CW signal is transmitted; a target detector configured to extract speed and angle using a frequency difference between the Tx CW signal and the reflected CW signal, and detect an approaching target; and a detection controller configured to control the RF transmitter to transmit the Tx CW signal as a signal having a triangular waveform in a time-frequency graph and to additionally transmit the Tx CW signal as a signal having a crossbar waveform at a predetermined frequency for a predetermined time, and extract speed and angle from the reflected CW signal having a crossbar waveform so as to detect th

Abstract: A nonvolatile memory device includes a memory cell array including a plurality of memory cells, a first metal layer, a peripheral circuit configured to control the memory cell array, a second metal layer, and a pad. The first metal layer is disposed on the memory cell array and includes a plurality of cell region interconnections connected to the memory cell array. The second metal layer is disposed on the peripheral circuit and includes a plurality of peripheral region interconnections connecting the peripheral circuit and the plurality of cell region interconnections. The pad is disposed on the second metal layer and exchanges data, an address, or a command with the peripheral circuit during operation of the device. The second metal layer is lower than the first metal layer relative to a substrate of the device.

Abstract: A nonvolatile memory device includes a memory cell array including a plurality of memory cells, a first metal layer, a peripheral circuit configured to control the memory cell array, a second metal layer, and a pad. The first metal layer is disposed on the memory cell array and includes a plurality of cell region interconnections connected to the memory cell array. The second metal layer is disposed on the peripheral circuit and includes a plurality of peripheral region interconnections connecting the peripheral circuit and the plurality of cell region interconnections. The pad is disposed on the second metal layer and exchanges data, an address, or a command with the peripheral circuit during operation of the device. The second metal layer is lower than the first metal layer relative to a substrate of the device.

Abstract: Provided are semiconductor devices including a peripheral region and a cell region stacked thereon and a method of fabricating the same. The semiconductor device may include a peripheral region including a lower substrate and a peripheral circuit provided thereon and a cell region including an upper substrate and a cell array provided thereon. The cell region may be stacked on the peripheral region. When an operation signal is applied to the cell region from the peripheral region, at least a portion of the peripheral and cell regions may be used as a ground pattern applied with a ground signal, thereby being in an electrical ground state.

Abstract: Disclosed herein are an automotive radar apparatus and a method of controlling automotive radar, capable of recognizing a road gradient by easily adjusting a vertical scan angle based on intensities of radio waves received by radar of a vehicle traveling on a road to recognize a gradient of the road, and of preventing deterioration of detection performance by vertically adjusting a radio wave elevation angle of the radar so as to be suitable for the road gradient. The automotive radar apparatus includes an antenna unit transmitting radar signals or receiving reflected radar signals according to elevation angles of a transmission antenna or a receiving antenna, and a control unit searching a center angle based on received power according to the elevation angles to set a beam corresponding to the center angle as a center beam and setting ranges of interest on the basis of the center beam.

Abstract: A nonvolatile memory device includes a memory cell array including a plurality of memory cells, a first metal layer, a peripheral circuit configured to control the memory cell array, a second metal layer, and a pad. The first metal layer is disposed on the memory cell array and includes a plurality of cell region interconnections connected to the memory cell array. The second metal layer is disposed on the peripheral circuit and includes a plurality of peripheral region interconnections connecting the peripheral circuit and the plurality of cell region interconnections. The pad is disposed on the second metal layer and exchanges data, an address, or a command with the peripheral circuit during operation of the device. The second metal layer is lower than the first metal layer relative to a substrate of the device.

Abstract: The present invention relates to a composition for forming a hard coating layer, which may form a hard coating layer having significantly improved hardness as well as excellent flexibility such that curling is minimized.