Abstract: Silicon nitride is formed on a supporting substrate by chemical vapor deposition using an antenna outside a vacuum reaction chamber to apply RF power to form an inductively coupled plasma from a reactant gas.

Abstract: Disclosed is an inductively coupled plasma chemical vapor deposition method for depositing a selected thin film on a substrate from inductively coupled plasma, the method including the steps of: providing a vacuum reaction chamber including an interior bounded, in part by a dielectric shield, the dielectric shield having an amorphous silicon layer on its interior surface, and an antenna arranged outside the deposition chamber adjacent to the dielectric shield where RF power is applied; placing the substrate on a stage with the chamber; exhausting the vacuum reaction chamber leaving a vacuum state; introducing a reactant gas to the vacuum reaction chamber at a predetermined pressure; and applying RF power to the antenna, whereby inductively coupled plasma for deposition of a thin film from the reactant gas is formed within the vacuum chamber.

Abstract: A plasma display panel including a pair of spaced substrates defined with a discharge space therebetween, and two groups of electrodes respectively arranged on the substrates in such a manner that they intersect each other while facing each other, wherein the electrodes included in one of the electrode groups have ring-shaped loops arranged in pixel regions, respectively, and alternating current is applied to the loop electrodes. When alternating current is applied to the loop electrodes, a magnetic field is formed around the loop of each loop electrode. The magnetic fluxes of the magnetic field form an electric field while passing through a discharge space defined in each pixel region. Accordingly, particles of discharge gas are charged.

Abstract: Disclosed is an inductively coupled plasma chemical vapor deposition apparatus including: a vacuum reaction chamber having an interior, bounded in part by a dielectric shield, the dielectric shield being lined with an oxygen-less silicon layer formed on its interior surface; a gas introducing unit for introducing a reactant gas to the interior of the vacuum reaction chamber; an antenna where radio frequency power is applied, the antenna being arranged outside the vacuum reaction chamber and adjacent to the dielectric shield; a coupling unit for coupling a radio frequency power source to the antenna; a stage for heating a work piece to be processed within the interior of the vacuum reaction chamber; and an exhaust unit for exhausting remnant gases from the interior of the vacuum reaction chamber. The oxygen-less silicon layer can be either an amorphous silicon layer, silicon nitride layer or silicon carbide layer.