Abstract: The present disclosure relates to an electrolyte for a lithium-sulfur battery and a lithium-sulfur battery comprising the same, and the electrolyte for the lithium-sulfur battery comprises a lithium salt and a nonaqueous solvent, wherein the nonaqueous solvent comprises glycol ether, cyclic ether and acyclic ether represented by the following chemical formula 1, the acyclic ether is included in an amount of 15 vol % or less based on the total volume of the nonaqueous solvent, and a ratio of a total volume of the glycol ether to a total volume of the acyclic ether is 5 or more: R1—O—R2??[Chemical formula 1] where R1 is an unsubstituted or substituted C1 to C3 alkyl group, and R2 is an unsubstituted or substituted C3 to C20 alkyl group.

Abstract: Disclosed is an operating method of an apparatus operated by at least one processor, the operating method including: fusing at least some feature maps generated by layers of a target model performing online continual learning to generate a fused feature map; identifying features with high attention in the fused feature map as shortcut features in a ratio based on a drop intensity; and removing the shortcut features from a target feature map output from a predetermined layer of the target model and input to a next layer.

Abstract: A glass article, a method of producing a glass article, and a display device are provided. The glass article, has a ratio of an intensity of hydrogen ions at a depth of 30 nm from a surface to an intensity of hydrogen ions at the surface that is equal to or greater than 1:4.

Abstract: A battery cell capable of preventing breakage of electrode tabs protruding from electrodes and a short circuit between the electrode tabs and surrounding electrodes, and reducing resistance between the electrode tabs and the electrode leads, a battery module including the same and a battery pack including the battery module are provided.

Abstract: A semiconductor device includes a substrate, a ferroelectric layer disposed on the substrate, a gate insulation layer disposed on the ferroelectric layer, metal particles disposed in the gate insulation layer, and a gate electrode layer disposed on the gate insulation layer.

Abstract: A method comprises obtaining original data representing one or more characteristics of a target object; selecting an artificial intelligence generation model from among a plurality of artificial intelligence generation models based on the original data; generating reconstructed data based on the original data using the selected artificial intelligence generation model; calculating an anomaly score by comparing the original data and the reconstructed data; and outputting detection result data indicating whether the target object is abnormal based on the anomaly score.

Abstract: A display device and a tiled display including the same are provided. The display device includes a bottom plate, and a display panel including an active area on the bottom plate and including a plurality of pixels, and a plurality of dummy areas near the active area and including a plurality of dummy pixels, wherein the plurality of dummy pixels is on at least one side surface of the bottom plate, wherein the plurality of pixels includes a first sub-pixel, a second sub-pixel, and a third sub-pixel configured to emit lights of different colors, and wherein the plurality of dummy pixels is configured to emit light of a same color as one of the first sub-pixel, the second sub-pixel, and the third sub-pixel.

Abstract: A glass article used as a cover glass of a flexible display device has values of indices consistent with results of a pen drop test and excellent impact resistance characteristics.

Abstract: A glass article includes a first surface and a second surface opposite to the first surface in a thickness direction. A thickness from the first surface to the second surface ranges from about 20 micrometers (?m) to about 100 ?m. A first brittleness index defined by following Equation 1 is about 1.5*10?4 ?m0.5 or more: First ? brittleness ? index ? = 1 / B = K IC / H v ( ? ? m 0.5 ) [ Equation ? 1 ] where ‘B’ is brittleness, ‘KIC’ is fracture toughness, and ‘Hv’ is hardness, and a stretch index defined by following Equation (2) is about 0.95 or more: ? KWW = 1 - ( T 0 - T g ) 2 D [ Equation ? ( 2 ) ] where ‘D’ is a strength factor (=BVFT/T0), ‘T0’ is a Vogel temperature, and ‘Tg’ is a glass transition temperature.

Abstract: A glass article includes a glass composition including mole percent (mol %) to 70 mol % of SiO2, 5 mol % to 15 mol % of Al2O3, 5 mol % to 15 mol % of Na2O, greater than 0 mol % and equal to or less than 5 mol % of K2O, 5 mol % to 15 mol % of Li2O, and greater than 0 mol % and equal to or less than 5 mol % of MgO, and satisfying Relation (1) below: 0.1?Al2O3/(sum of Na2O,K2O, and Li2O)?0.7??(1), where Al2O3, Na2O, K2O, and Li2O in the Relation (1) denote contents (mol %) of Al2O3, Na2O, K2O, and Li2O, respectively, in the glass composition, and the glass article has a thickness of 100 micrometers (?m) or less.

Abstract: An electrode composite membrane and an electrochemical device including the same are provided.

Abstract: A nonvolatile memory device includes a substrate having an upper surface, and a gate structure disposed over the substrate. The gate structure includes at least one gate electrode layer pattern and at least one gate insulation layer pattern, which are alternately stacked along a first direction perpendicular to the upper surface. The gate structure extends in a second direction perpendicular to the first direction. The nonvolatile memory device includes a ferroelectric layer disposed on at least a portion of one sidewall surface of the gate structure. The one sidewall surface of the gate structure forms a plane substantially parallel to the first and second directions. The nonvolatile memory device includes a channel layer disposed on the ferroelectric layer, and a source electrode structure and a drain electrode structure disposed to contact the channel layer and spaced apart from each other in the second direction.

Abstract: A glass composition, a glass article prepared therefrom, and a display device are provided. The a glass article includes, as a glass composition, 62 to 72 mol % of SiO2, greater than 0 and equal to or less than 10 mol % of Al2O3, 10 to 20 mol % of Na2O, greater than 0 and equal to or less than 5 mol % of K2O, 7 to 18 mol % of a sum of CaO and MgO with respect to a total weight of the glass article, satisfying Relation 1 below, and having a thickness of 100 ?m or less: 0.1?Al2O3/(sum of Na2O and K2O)?0.6 . . . (Relation 1), where Al2O3, Na2O and K2O are contents of corresponding components measured in mole percents (mol %).

Abstract: A method of manufacturing a semiconductor device comprises: providing a substrate; forming a ferroelectric layer on the substrate; stacking two-dimensional conductive metal-organic frameworks that include cavities on the ferroelectric layer to form a metal-organic framework layer, the cavities of the conductive metal-organic frameworks being disposed to overlap with each other in a thickness direction of the metal-organic framework layer; disposing metal particles within the overlapping cavities to form a charge trap layer; forming a gate insulation layer on the charge trap layer; and forming a gate electrode layer on the gate insulation layer.

Abstract: The present invention relates to a microorganism culture production amount prediction system and method with improved accuracy in predicting the microorganism culture production amount using a metabolic model equation by calculating the predicted substrate concentration from the metabolic model equation, calculating the actually measure substrate concentration from the spectrum data of the culture solution, comparing the predicted substrate concentration with the actually measured substrate concentration, and updating the parameters of the metabolic model equation, in a method for predicting the culture concentration of microorganisms with known metabolic model equation governing the metabolic model.

Abstract: A glass composition, a glass article prepared therefrom, and a display device are provided. The glass article includes as a glass composition: 59 to 69 mol % of SiO2, 8 to 18 mol % of Al2O3, greater than 0 to 5 mol % of Na2O, greater than 0 to 5 mol % of ZnO, and greater than 0 to 10 mol % of B2O3, and glass article further includes 10 to 20 mol % of CaO or 15 to 25 mol % of MgO, satisfies Relation 1 below, and has a thickness of 100 ?m or less, 4.5?Al2O3/Na2O?5.5??(Relation 1), where, in Relation 1, Al2O3 and Na2O represent contents (mol %) of corresponding components, respectively, in the glass composition.

Abstract: A semiconductor device includes a substrate, a bit line conductive layer extending in a lateral direction substantially parallel to a surface of the substrate, a first insulation line structure extending in a second direction that is perpendicular to the first lateral direction and that is substantially parallel to the surface of the substrate, first and second channel structures that are disposed to respectively contact first and second sides of the first insulation line structure and that partially overlap with the bit line conductive layer, first and second gate dielectric layers respectively disposed over the substrate and on side surfaces of the first and second channel structures, and first and second gate line conductive layers extending in the second lateral direction over the substrate and covering at least a portion of each of the first and second gate dielectric layers, respectively.

Abstract: A glass article has a thickness in a range of 20 ?m to 100 ?m and a third elastic energy index of 1.8 MPa2/m0.5 or greater, where the third elastic energy index is defined by Equation 2-3: Third elastic energy index (Eelas3)=GIC×(1/B)×Eabs (Equation 2-3), where GIC is a fracture energy index defined by Equation 1: Fracture energy index (GIC)=(KIC2×(1?v2))/E (Equation 1), where KIC is fracture toughness, v is Poisson's ratio, and E is Young's modulus, B is brittleness (fracture toughness KIC/hardness Hv), and Eabs is absorption energy defined by Equation A: Absorption energy (Eabs)=?2×(1?v)/E (Equation A), where ? is surface strength defined by Equation B: Surface strength (?)=(E×?×?2)/(1?v) (Equation B), where E is Young's modulus, ? is a thermal expansion coefficient, ? is density, and v is Poisson's ratio.

Abstract: A glass article prepared from a glass composition includes SiO2 in a range of about 48 mol % to about 57 mol %, Al2O3 in a range of about 10 mol % to about 20 mol %, Na2O in a range of about 8 mol % to about 18 mol %, K2O greater than 0 mol % and equal to or less than about 10 mol %, B2O3 in a range of about 10 mol % to about 17 mol %, and CaO or MgO greater than 0 mol % and equal to or less than about 7 mol % based on a total weight. A ration of Al2O3 and Na2O+K2O is in a range of about 0.7 to about 1.3, and a thickness of the glass article is equal to or less than about 100 ?m.

Abstract: A glass article includes, as a glass composition, about 73 mol % to about 83 mol % of SiO2, greater than about 0 mol % to about 5 mol % of Al2O3, about 10 mol % to about 20 mol % of Na2O and about 3 mol % to about 8 mol % of MgO based on the total weight, satisfying Inequality (1) below: 0<Al2O3/Na2O (R ratio)?0.5, ??(1), where Al2O3 and Na2O are contents (mol %) of the components in the glass composition, and wherein the cover window has a thickness of about 100 micrometers (?m) or less.