Abstract: The present disclosure relates to a method for refreshing a polishing pad, and, through increasing a useful life of a polishing pad used in a polishing process, is capable of reducing the amount of discarded polishing pad, and significantly enhancing polishing efficiency by shortening the time required to replace the polishing pad. In addition, a method for manufacturing a semiconductor device is a manufacturing process using the method for refreshing a polishing pad, wherein a polishing pad having the period of usage ended is reusable by having polishing performance equivalent to a new polishing pad, and process efficiency may be enhanced by reducing the number of replacements of polishing pads.

Abstract: Disclosed is an instrument transformer detecting an amount of power supplied to a load via a high voltage line, wherein the instrument transformer is integrally configured with a current level converter, a voltage level converter and a power amount calculating module so that it detects an amount of power supplied via the high voltage line and transmits the detected amount of power to a power amount management unit as a digital signal to correctly detect the amount of power.

Abstract: A method for planarizing a layer of a semiconductor device includes depositing a high density plasma (HDP) oxide layer over a wafer to have a reflective index distribution that is inversely proportional to a thickness distribution of the HDP oxide layer. A chemical mechanical polishing process is performed on the HDP oxide layer.

Abstract: Disclosed is an instrument transformer detecting an amount of power supplied to a load via a high voltage line, wherein the instrument transformer is integrally configured with a current level converter, a voltage level converter and a power amount calculating module so that it detects an amount of power supplied via the high voltage line and transmits the detected amount of power to a power amount management unit as a digital signal to correctly detect the amount of power.

Abstract: A method for planarizing a layer of a semiconductor device includes depositing a high density plasma (HDP) oxide layer over a wafer to have a reflective index distribution that is inversely proportional to a thickness distribution of the HDP oxide layer. A chemical mechanical polishing process is performed on the HDP oxide layer.

Abstract: A chemical mechanical polishing slurry, contains an abrasive dispersed in deionized water and an organic viscosity modifier added to adjust the viscosity of the slurry to within a range of 0.5 to 3.2 cps.