Abstract: A lens includes a lens unit; an intermediate layer configured to cover a surface portion of the lens unit; and a water-repellent layer, configured to cover a surface portion of the intermediate layer, including a base layer and an ultraviolet (UV) absorber disposed in the base layer.

Abstract: A lens includes a lens unit including an uneven surface structure, and an uneven layer formed on at least a portion of the uneven surface structure of the lens unit and comprising an uneven surface structure. The uneven surface structure of the lens unit and the uneven surface structure of the uneven layer have different shapes.

Abstract: A bulk acoustic resonator filter includes a plurality of bulk acoustic resonators connected between first and second radio frequency (RF) ports to form a frequency band, wherein each of the plurality of bulk acoustic resonators includes a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes, the plurality of bulk acoustic resonators include first and second bulk acoustic resonators having different differences between a resonant frequency and an antiresonant frequency, and different ratios of a thickness of the piezoelectric layer to a total thickness of the first and second electrodes, and/or different thicknesses of the piezoelectric layer.

Abstract: A bulk acoustic resonator filter includes a series part including at least one series acoustic resonator electrically connected between a first and second radio frequency ports; and shunt acoustic resonators electrically connected to each other in series between a first node of the series part and a first ground port, wherein each of the shunt acoustic resonators comprises a resonance portion including a first electrode, a piezoelectric layer, and a second electrode; and an overlap region in which the first electrode, the piezoelectric layer, and the second electrode overlap, the overlap region has an aspect ratio equal to a ratio between a longest length of the overlap region in an extension direction of a longest side of the overlap region and a longest length of the overlap region in a direction perpendicular to the extension direction, and the aspect ratios of the shunt acoustic resonators include different aspect ratios.

Abstract: A bulk acoustic resonator includes: a substrate; a protective layer; and a resonant portion including a piezoelectric layer, a first electrode disposed between the piezoelectric layer and the substrate, and a second electrode disposed between the piezoelectric layer and the protective layer. The protective layer covers a central portion of the resonant portion and a reflective portion surrounding the central portion and formed in a region in which an upper surface of the second electrode rises relative to the central portion. An upper surface of a portion of the protective layer covering the reflective portion is more gently inclined than the upper surface of a portion of the second electrode in the reflective portion.

Abstract: A bulk acoustic resonator package is provided. The bulk acoustic resonator package includes a substrate; a cap; a resonance portion including a first electrode, a piezoelectric layer, and a second electrode, stacked in a first direction in which the substrate and the cap face each other, and disposed between the substrate and the cap; and a cap melting member disposed to surround the resonance portion, and disposed to be in contact with a portion of a surface of the cap facing the substrate, when viewed in the first direction, and including a material or a structure that is based on a melting of the portion of the surface of the cap.

Abstract: An acoustic resonator package includes: a substrate; an acoustic resonator disposed on the substrate; a cap disposed on the substrate and the acoustic resonator; and a bonding portion bonding the substrate and the cap to each other. The cap includes a central portion accommodating the acoustic resonator, and an outer portion disposed outside of the central portion and having a bonding surface. The outer portion includes protrusions in contact with the bonding portion, and at least one trench disposed between the protrusions. The acoustic resonator package further includes a first protective layer and a second protective layer, the first protective layer and the second protective layer being disposed on a region of the bonding surface formed on each of the protrusions.

Abstract: A bulk-acoustic wave (BAVV) resonator is provided. The BAW includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer disposed to cover at least a portion of the first electrode, and a second electrode disposed to cover at least a portion of the piezoelectric layer, wherein the piezoelectric layer includes an intermediate layer, a first layer disposed above the intermediate layer and a second layer disposed below the intermediate layer, the first layer and the second layer are symmetrical in relation to a plane through which a central line of the intermediate layer passes in a thickness direction, and a thickness of the intermediate layer is greater than a thickness of each of the first and second layers.

Abstract: An acoustic wave resonator package is provided. The acoustic wave resonator package includes an acoustic wave resonator including an acoustic wave generator on a first surface of a substrate; a cover disposed to face the first surface of the substrate; a bonding member disposed between the substrate and the cover, and configured to bond a bonding surface of the acoustic wave generator and the cover to each other, wherein the bonding member includes glass frit, and the bonding surface of the acoustic wave resonator which is bonded to the bonding member may be formed of a dielectric material.

Abstract: A bulk acoustic resonator filter includes: a series bulk acoustic resonator electrically connected, in series, between first and second ports through which a radio frequency (RF) signal passes; a second shunt bulk acoustic resonator, electrically shunt connected between the series bulk acoustic resonator and a ground and having a resonance frequency lower than that of the series bulk acoustic resonator; and a first shunt bulk acoustic resonator electrically connected to the second shunt bulk acoustic resonator in series and having a resonance frequency higher than that of the second shunt bulk acoustic resonator. One or both of the series bulk acoustic resonator and the first shunt bulk acoustic resonator includes a first electrode disposed above a substrate; a piezoelectric layer disposed on the first electrode; a second electrode disposed on the piezoelectric layer; and a trench formed in an upper surface or above the second electrode and recessed downwardly.

Abstract: A bulk-acoustic wave resonator includes: a substrate; and a resonator including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate. The piezoelectric layer is formed of aluminum nitride (AlN) containing scandium (Sc), the content of scandium in the piezoelectric layer is 10 wt % to 25 wt %, and the piezoelectric layer has a leakage current density of 1 ?A/cm2 or less.

Abstract: A bulk-acoustic wave resonator package includes a package substrate; a cover bonded to the package substrate; an acoustic wave resonator accommodated in an accommodation space defined by the package substrate and the cover; a conductive wire disposed in the accommodation space to electrically connect the acoustic wave resonator to the package substrate; and a bonding portion to fixedly couple the acoustic wave resonator to the package substrate. The bonding portion includes an adhesive member including silicon.

Abstract: A bulk acoustic wave resonator includes: a substrate; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate; and a protective layer disposed on an upper surface of the resonant portion. The protective layer includes: a first protective layer formed of a diamond thin film; and a second protective layer stacked on the first protective layer, and formed of a dielectric material.

Abstract: A bulk acoustic wave resonator is provided. The resonator includes a substrate; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate; and a temperature compensation layer disposed at least one of above and below the piezoelectric layer, wherein a material of the temperature compensation layer has a coefficient of thermal expansion of which a sign is opposite to a sign of a coefficient of thermal expansion of a material of the piezoelectric layer, and wherein a relation of a thickness of the temperature compensation layer and a thickness of the piezoelectric layer satisfies the following equation: 0.25<Thickness of Temperature Compensation Layer/Thickness of Piezoelectric Layer<0.33.

Abstract: A dongle-type module that supports artificial intelligence in an electronic device is provided. The dongle-type module includes an access channel configured to be connected to the electronic device; and a neural network processor, configured to receive first input information from the electronic device through the access channel, and generate, by a neural network calculation, output information based on the first input information.

Abstract: An edge AI method and device are provided. The device includes one or more first neural network layers and one or more second neural network layers, each including plural second cells, where one first neural network layer, of the one or more first neural network layers, is connected to one second neural network layer of the one or more second neural network layers, and, for an operation of the one or more first neural network layers and the one or more second neural network layers, the device is configured to perform the operation according to first weight information, of the one or more first neural network layers, received from and trained outside of the device, and the device is configured to perform the operation according to second weight information, of the one or more second neural network layers, based on training of the second weight information by the device.

Abstract: A bulk-acoustic wave resonator includes: a substrate; and a resonator portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate. The piezoelectric layer is formed of aluminum nitride (AlN) containing scandium (Sc). The bulk-acoustic wave resonator satisfies the following expression: leakage current density×scandium (Sc) content<20. The leakage current density is a leakage current density of the piezoelectric layer in ?A/cm2, and the scandium (Sc) content is a weight percentage (wt %) of scandium (Sc) in the piezoelectric layer.

Abstract: There are provided a touchscreen device and a method of driving the same. The touchscreen device includes: a panel unit including a plurality of first electrodes extending in a first direction and a plurality of second electrodes extending in a second direction; and a control unit applying predetermined driving signals to at least one first electrode among first electrodes arranged sequentially from a first thereof and to at least one first electrode among first electrodes arranged sequentially from a last thereof, and detecting a change in capacitance from at least one of the first electrodes among electrodes disposed in a central portion, to thereby determine a touch.

Abstract: There are provided a touchscreen device and a method of driving the same. The touchscreen device includes: a panel unit including a plurality of first electrodes extending in a first direction and a plurality of second electrodes extending in a second direction; and a control unit applying predetermined driving signals to at least one first electrode among first electrodes arranged sequentially from a first thereof and to at least one first electrode among first electrodes arranged sequentially from a last thereof, and detecting a change in capacitance from at least one of the first electrodes among electrodes disposed in a central portion, to thereby determine a touch.

Abstract: A sampling frequency offset estimation apparatus of an orthogonal frequency division multiplexing (OFDM) system includes a first differential operation unit performing complex conjugate multiplication of scattered pilots of complex symbols subjected to a fast Fourier transform (FFT) in an OFDM receiver, an interpolation unit repeating an operation of obtaining a median complex symbol between two consecutive symbols among complex symbols having first phase difference information from the first differential operation unit by a predetermined number, a second differential operation unit performing complex conjugate multiplication of two consecutive median complex symbols among median complex symbols from the interpolation unit, and a sampling frequency offset estimation unit estimating sampling frequency offset using complex symbols having second phase difference information from the second differential operation unit.