Abstract: An electrode assembly, a battery, and a battery pack and a vehicle including the same are provided. One end of the electrode assembly includes a plurality of segment alignments in which the plurality of segment groups are aligned along a radial direction, and an electrolyte impregnation portion provided between segment alignments adjacent in a circumferential direction, wherein an end of the first active material portion is exposed between winding turns of the separator. The segments included in the segment alignment are bent toward the core to form a bending surface region. An end of the separator is spaced apart from a criterion line extending in a winding axis direction along a location corresponding to the plurality of cut grooves by 30% or less of a minimum height of the segments forming the bending surface region.

Abstract: A method of manufacturing an all-solid-state battery electrode, an all-solid-state battery electrode manufactured by the method, and an all-solid-state battery including the electrode are disclosed. In the method, a specific type of binder included in the electrode is prepared in a fiber form by applying pressure to the binder under specific conditions, so that the fiber-form binder thus prepared has an average fineness that satisfies a specific range. Therefore, the all-solid-state battery including the electrode has an advantage of having high capacity even in the case of electrode thickening for high loading.

Abstract: Disclosed in an embodiment is a semiconductor device comprising a semiconductor structure, which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein: the first conductive semiconductor layer comprises a first super lattice layer comprising a plurality of first sub layers and a plurality of second sub layers, the first and second sub layers being alternately arranged; the semiconductor structure emits ions of indium, aluminum, and a first and second dopant during a primary ion irradiation; the intensity of indium ions emitted from the active layer includes a maximum indium intensity peak; the doping concentration of the first dopant emitted from the first conductive semiconductor layer includes a maximum concentration peak; the maximum indium intensity peak is disposed to be spaced from the maximum concentration peak in a first direction; th

Abstract: The polyamide-imide block copolymer according to the present invention makes it possible to provide a polyamide-imide film having excellent thermal stability and chemical resistance and, at the same time, having excellent mechanical properties.

Abstract: The present disclosure relates to a poly(amide-imide) copolymer in which at least one of an imide repeating unit and an amide repeating unit is substituted with a specific functional group, and a composition and a polymer film comprising the same.

Abstract: Disclosed in an embodiment is a semiconductor device comprising a semiconductor structure, which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein: the first conductive semiconductor layer comprises a first super lattice layer comprising a plurality of first sub layers and a plurality of second sub layers, the first and second sub layers being alternately arranged; the semiconductor structure emits ions of indium, aluminum, and a first and second dopant during a primary ion irradiation; the intensity of indium ions emitted from the active layer includes a maximum indium intensity peak; the doping concentration of the first dopant emitted from the first conductive semiconductor layer includes a maximum concentration peak; the maximum indium intensity peak is disposed to be spaced from the maximum concentration peak in a first direction; th

Abstract: The present disclosure relates to a III-nitride semiconductor light-emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer doped with a p-type dopant, an active layer disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and including a quantum well layer to generate light by recombination of electrons and holes, and a diffusion barrier layer disposed between the quantum well layer and the p-type nitride semiconductor layer to be in contact with both layers, having a surface formed to make the interface with the p-type nitride semiconductor layer smooth, and to prevent diffusion of the p-type dopant into the quantum well layer.

Abstract: The present disclosure relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 100 ? in an n-side contact layer.

Abstract: The present disclosure relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 300 ? in an n-side contact layer.