Abstract: The present disclosure relates to an apparatus for fabricating a display panel including: an attachment member having a fixing portion in a pressurization direction to which a pressurization header is fixed, an attachment driving member configured to move the attachment member and the pressurization header in the pressurization direction or a detachment direction through a fixing frame of the attachment member, a first pressure sensing module between the pressurization header and the attachment member and configured to generate first pressure detection signals according to pressure applied to the pressurization header, a gradient setting module configured to set a gradient of the pressurization header based on magnitudes of the first pressure detection signals, and a gradient control module configured to adjust gradients of the pressurization header, the attachment member, and the fixing frame according to control of the gradient setting module.

Abstract: An apparatus for fabricating a display panel and a fabricating method of a display panel are provided. An apparatus for fabricating a display panel includes a loading module of a large-area fabricating substrate fabricated and separated into a plurality of display panels, a solvent application module configured to apply a metal bonding solvent onto the large-area fabricating substrate, and an element transfer module configured to transfer a plurality of light emitting elements or at least one integrated circuit onto the large-area fabricating substrate on which the metal bonding solvent is applied, and the loading module includes a groove type discharge path through which the metal bonding solvent applied by the solvent application module flows and is discharged.

Abstract: The display device includes a substrate, a thin-film transistor on the substrate and including a first electrode, a second electrode and a semiconductor layer, a first insulating layer on the thin-film transistor, an organic layer on the first insulating layer, at least one light-emitting element on the organic layer, a pixel electrode on the organic layer and in contact with a side surface of the at least one light-emitting element, a planarization layer on the side surface of the at least one light-emitting element and a common electrode on the at least one light-emitting element and the planarization layer.

Abstract: Disclosed is an in-cell type organic electroluminescent device. The in-cell type organic electroluminescent device according to an embodiment of the present disclosure includes at least one OLED-driving Thin-Film Transistor (OLED driving TFT) that is formed on a substrate and drives an organic light emitting device (OLED); the OLED connected to the at least one OLED driving TFT through a first contact hole; at least one touch-sensing thin-film transistor (though sensing TFT) that is simultaneously formed with the at least one OLED driving TFT on the substrate and senses touch; and an touch electrode that is connected to the at least one touch sensing TFT through a second contact hole and does not overlap with the OLED, wherein the at least one OLED driving TFT and the at least one touch sensing TFT share a gate line.

Abstract: A digital radiographic detector uses an IGZO active layer in the switching element for each imaging pixel in a two-dimensional array of imaging pixels. Each imaging pixel has a photo-sensitive element and the switching element. Read-out circuits electrically connected to the two-dimensional array generate a radiographic image by reading out image data by switching on and off the switching elements. The IGZO active layer may be formed having a thickness less than about 7 nm.

Abstract: Provided are a flexible display device and a method of manufacturing the same. More particularly, the method of manufacturing the flexible display device according to the present invention includes a step of forming a first polyimide-based layer by coating a polyimide-based solution on a carrier substrate; a step of forming an oxide thin film transistor array on the first polyimide-based layer; a step of forming a second polyimide-based layer by coating a polyimide-based solution on the oxide thin film transistor array; a step of forming an organic light emitting diode on the second polyimide-based layer; and a step of removing the carrier substrate, wherein, in the step of forming the oxide thin film transistor array, the oxide thin film transistor array is disposed between the first polyimide-based layer and the second polyimide-based layer.

Abstract: A digital radiographic detector uses an IGZO active layer in the switching element for each imaging pixel in a two-dimensional array of imaging pixels. Each imaging pixel has a photo-sensitive element and the switching element. Read-out circuits electrically connected to the two-dimensional array generate a radiographic image by reading out image data by switching on and off the switching elements. The IGZO active layer may be formed having a thickness less than about 7 nm.

Abstract: Disclosed is an in-cell type organic electroluminescent device. The in-cell type organic electroluminescent device according to an embodiment of the present disclosure includes at least one OLED-driving Thin-Film Transistor (OLED driving TFT) that is formed on a substrate and drives an organic light emitting device (OLED); the OLED connected to the at least one OLED driving TFT through a first contact hole; at least one touch-sensing thin-film transistor (though sensing TFT) that is simultaneously formed with the at least one OLED driving TFT on the substrate and senses touch; and an touch electrode that is connected to the at least one touch sensing TFT through a second contact hole and does not overlap with the OLED, wherein the at least one OLED driving TFT and the at least one touch sensing TFT share a gate line.

Abstract: Provided are a flexible display device and a method of manufacturing the same. More particularly, the method of manufacturing the flexible display device according to the present invention includes a step of forming a first polyimide-based layer by coating a polyimide-based solution on a carrier substrate; a step of forming an oxide thin film transistor array on the first polyimide-based layer; a step of forming a second polyimide-based layer by coating a polyimide-based solution on the oxide thin film transistor array; a step of forming an organic light emitting diode on the second polyimide-based layer; and a step of removing the carrier substrate, wherein, in the step of forming the oxide thin film transistor array, the oxide thin film transistor array is disposed between the first polyimide-based layer and the second polyimide-based layer.

Abstract: A digital radiographic detector uses an IGZO active layer in the switching element for each imaging pixel in a two-dimensional array of imaging pixels. Each imaging pixel has a photo-sensitive element and the switching element. Read-out circuits electrically connected to the two-dimensional array generate a radiographic image by reading out image data by switching on and off the switching elements. The IGZO active layer may be formed having a thickness less than about 7 nm.

Abstract: A digital radiographic detector uses an IGZO active layer in the switching element for each imaging pixel in a two-dimensional array of imaging pixels. Each imaging pixel has a photo-sensitive element and the switching element. Read-out circuits electrically connected to the two-dimensional array generate a radiographic image by reading out image data by switching on and off the switching elements. The IGZO active layer may be formed having a thickness less than about 7 nm.

Abstract: An oxide semiconductor transistor used in a pixel element of a display device and a method of manufacturing the same are disclosed. The oxide semiconductor transistor used in a pixel element of a display device comprises a substrate, a first gate electrode located on the substrate, a source electrode and a drain electrode located on the first gate electrode and a second gate electrode located on the source electrode and the drain electrode. Here, the first gate electrode is electrically connected to the second gate electrode, the same voltage is applied to the first gate electrode and the second gate electrode, and a width of the second gate electrode is shorter than a length between the source electrode and the drain electrode.

Abstract: An oxide semiconductor transistor used in a pixel element of a display device and a method of manufacturing the same are disclosed. The oxide semiconductor transistor used in a pixel element of a display device comprises a substrate, a first gate electrode located on the substrate, a source electrode and a drain electrode located on the first gate electrode and a second gate electrode located on the source electrode and the drain electrode. Here, the first gate electrode is electrically connected to the second gate electrode, the same voltage is applied to the first gate electrode and the second gate electrode, and a width of the second gate electrode is shorter than a length between the source electrode and the drain electrode.