Abstract: A method for manufacturing a capacitor is provided. The method includes: forming a first hole, depositing a barrier metal on an inner wall of the first hole to form a first electrode. The method further includes forming a second hole and bottom electrode-hole aligned with the first hole, forming a second electrode and a bottom electrode, forming a top electrode, and performing a back grind process to expose the first electrode under the silicon substrate.

Abstract: A GaN-based LED comprises a substrate; an an-type GaN layer formed on the substrate; an active layer formed on a predetermined region of the n-type GaN layer; a p-type GaN layer formed on the active layer; a transparent electrode formed on the p-type GaN layer; a p-electrode formed on the transparent electrode; an n-type electrode formed on the n-type GaN layer on which the active layer is not formed; and a protective film formed on a resulting structure between the transparent electrode and the n-type electrode, the protective film being composed of a plasma-oxidized transparent layer.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes the steps of forming an interlayer insulating layer on a semiconductor substrate, selectively patterning the interlayer insulating layer to form a contact hole, depositing a first metal on an inner surface of the contact hole, submerging the semiconductor substrate on which the first metal is deposited into an electrochemical plating (ECP) solution bath in which a second metal is dissolved, dissolving the first metal in the ECP solution bath, plating the first and second metals dissolved in the ECP solution bath at the same time to gap-fill an alloy of the first and second metals in the contact hole, and removing the alloy using the interlayer insulating layer as an end point in a CMP process to form an alloy interconnection.

Abstract: Disclosed are an image sensor and a method for manufacturing the same, capable of increasing a light absorbing coefficient by forming a rough surface on a photodiode. The image sensor includes a semiconductor substrate with a plurality of photodiodes thereon having rough upper surfaces, a dielectric layer on the semiconductor substrate, a color filter layer on the dielectric layer, a planarization layer on an entire surface of the semiconductor substrate including the color filter layer, and a plurality of micro-lenses formed on the planarization layer to correspond to the color filter layer.

Abstract: Provided is a method for manufacturing a semiconductor device. In the method, a gate is formed in an active region of a substrate with a gate insulation layer interposed between the gate and the substrate. Spacers are formed on lateral sides of the gate. A first metal layer is deposited on an entire surface of the substrate. A photoresist pattern is formed to expose a region including at least the gate. A second metal layer is deposited on an entire surface of the substrate including the photoresist pattern. The photoresist pattern and a portion of the second metal layer formed on the photoresist pattern are removed. Silicides are formed in the gate and in an interface between the substrate and the first metal layer using heat treatment.

Abstract: An air conditioner includes a blower case to guide air blown by a blowing fan to an indoor discharge port. The blower case includes a discharge guide space to guide discharged air to the indoor discharge port, and an air distribution member positioned in the discharge guide space to guide distribution of the discharged air. The air conditioner has uniform volume and velocity of air discharged through an indoor discharge port, and suppresses blowing noise from being generated from the indoor discharge port.

Abstract: A method for growing a high quality indium gallium nitride by metal organic chemical vapor deposition (MOCVD) is provided. In the method, the indium gallium nitride grows at a growth rate of at least about 1.5 nm/min at a temperature of at least about 800° C. while an internal pressure of an MOCVD reactor is maintained at about 400 mbar or less.

Abstract: A system and method of connecting and accessing the Internet Media Domain Name (MDN) channels with multiple media content from local media servers to client nodes by using a Media Channel-Routing Internet Protocol (mCh-IP) in a Media Internet Channel Station (MICS). For the first mode of the MICS, a private Media Channel Domain Root Server (mCh-DRS) resolves an MDN channel to the channel IP of the media server or the media content files to directly connect to and access the media content. For the second mode of the MICS, a Channel Access Control Key System (CHACKS) using a Media Channel-Routing Authentication Server (mCh-AS) provides a DRM protected channel mode between the media server of the provider and the client node. Finally, the last mode of the MICS is a Payment Channel Access Control Key System (Pay-CHACKS) using a Media Channel-Routing Payment Server (mCh-PS) for providing a payment channel mode in the Internet media channel.

Abstract: An air discharge apparatus usable with an air conditioner includes a body formed with a suction opening and a discharge opening, a blowing fan arranged in the body to circulate air, and a partition to separate a suction path defined between the suction opening and the blowing fan from a discharge path defined between the blowing fan and the discharge opening. The partition has a vortex-restraint portion, which protrudes into the discharge path to occupy a portion of a bottom region of the cross sectional area of the discharge path, thereby serving to prevent generation of a vortex of air in the discharge path.

Abstract: An air conditioner which reduces an amount of an eddy generated in an outlet or prevents generation of the eddy, to increase a flow rate of discharged air and reduce the generation of noise. The air conditioner includes an indoor air inlet and an indoor air outlet formed in a main body, an air blast fan to inhale indoor air through the indoor air inlet and to discharge the indoor air through the indoor air outlet, and at least one partition to reduce an amount of an eddy generated in the indoor air outlet or to prevent generation of the eddy. The at least one partition is installed on a separation plate that separates from each other a suction channel to inhale the indoor air and a discharge channel to discharge the indoor air.

Abstract: A nitride semiconductor device is provided. In the device, first and second conductivity type nitride layers are formed. An active layer is formed between the first and second conductivity type nitride layers. The active layer includes at least one quantum barrier layer and at least one quantum well layer. Also, a current spreading layer is interposed between the first conductivity type nitride layer and the active layer. The current spreading layer has an In content greater than the quantum well layer of the active layer.

Abstract: The present invention relates to a method for long-term culturing of avian spermatogonial stem cells, which comprises the steps of: (a) preparing an avian testis; (b) isolating a population of testicular cells from said avian testis; and (c) culturing said avian spermatogonial stem cells in said population of testicular cells on a feeder cell layer in a medium containing a cell growth factor, a population of avian spermatogonial stem cells and a method for producing transgenic aves.

Abstract: The present invention relates to a method for producing an avian chimera using spermatogonial cells which comprising the steps: (a) retrieving a testis from a donor ave; (b) isolating a testicular cell population from the testis; (c) culturing the testicular cell population in a medium supplemented with a cell growth factor to obtain a spermatogonial cell population; and (d) injecting the cultured spermatogonial cell population or testicular cell population into a testis of a recipient ave to produce the avian chimera. In addition, the present invention relates to a germline avian chimera.

Abstract: Disclosed herein is a one-component type moisture-curable polyurethane composition with improved storage stability. The polyurethane composition comprises a prepolymer prepared by reacting a polyol having a weight-average molecular weight of 1,000 to 5,000 with a mixture of an aromatic diisocyanate and an aliphatic diisocyanate in a weight ratio of 1:1 to 1:0.1, an inorganic paste, and a blocked amine compound and a monomeric vinyl silane as additives for removing moisture from the inorganic paste. The polyurethane composition has improved storage stability even in general open equipment. Further disclosed is a method for preparing the polyurethane composition.

Abstract: Disclosed is a method for manufacturing a semiconductor device including a low-voltage MOS transistor and a high-voltage MOS transistor.

Abstract: A method of detecting misalignment of ion implantation areas comprises forming at least one standard pattern consisting of a first area and a second area for use in measuring resistance, implanting first and second conduction type impurity ions into the first and second areas, respectively, and measuring a resistance of the standard pattern. The method also includes forming a misalignment inspection pattern consisting of a first area and a second area on a predetermined area within a semiconductor substrate, implanting first and second conduction type impurity ions into the misalignment inspection pattern and active regions on the semiconductor substrate, respectively, and measuring a resistance of the misalignment inspection pattern. The method concludes by comparing the resistance of the standard pattern with the resistance of the misalignment inspection pattern.

Abstract: Embodiments of a computer system, and a software installation method thereof are described. An embodiment of a computer system can include a system for installing an O/S (Operating/System) and a part of system software; a storage unit for storing a plurality of system software, which can be installed depending on various O/Ses or devices; and a controlling unit for selectively installing system software, which is required for the system, among the stored plurality of system software.

Abstract: An air purifier includes a bell-mouth having an enhanced structure to prevent an increase of noise at a particular frequency when air flows into the blowing fan through the bell-mouth. The air purifier includes a housing, a filter unit and a blowing fan placed inside the housing, and a bell-mouth placed toward an intake side of the blowing fan. The bell-mouth includes an inlet port formed at a center of the bell-mouth, a flow guide extending from a periphery of the inlet port toward the blowing fan, and a flat section positioned to discontinue the flow guide to increase a distance between the blowing fan and the bell-mouth. The flat section is formed at the section in the range of about 240°˜330° with respect to a starting point of a scroll inside the bell-mouth. The flat section may have a saw-tooth shape to effectively distribute air passing therethrough.

Abstract: The present invention relates to a touch input device. The touch input device of the present invention comprises a cover unit 20 which is formed with a reflective coating layer 22 on a surface thereof and made of a transparent material; a selective transmission unit 24 which is provided on a rear surface of the cover unit 20, formed with light-emitting holes 26 indicative of their respective functions and made of an opaque material; and a touchpad module 30 which includes light emitting devices 33 provided on a rear surface of the selective transmission unit 24 to provide light to the light-transmitting holes 26 and detects whether a user's body is touched onto the surface of the cover unit 20 to receive a detection signal.

Abstract: The present invention relates to a method for improving the germline transmission efficiency of avian primordial germ cells (PGCs), and methods for producing avian chimeras and transgenic using it. The present method comprises the steps of (a) isolating primordial germ cells (PGCs) from an avian embryonic gonad; and (b) culturing said PGCs in vitro for at least 5 days. According to the present method, the germline transmission efficiency of PGCs can be dramatically improved in a feasible manner.