Abstract: A method for forming a planarization layer includes: providing a substrate including a trench; coating a pre-thinner over a surface of the trench; forming a gap-filling material in the trench; coating a post-thinner over the gap-filling material; and performing a spinning process to rotate the substrate.

Abstract: A photoresist composition contains: a polymer comprising a first compound and a second compound; a photoacid generator; and a solvent. The first compound has a unit structure, which includes: hydrogen or an alkyl group; and at least one of hydrogen, a hydroxyl group, an alkyl group, an heteroalkyl group, a cycloalkyl group, an heterocycloalkyl group, an aryl group, and an heteroaryl group. The second compound has a unit structure, which includes at least one of hydrogen, a hydroxyl group, an alkyl group, an heteroalkyl group, a cycloalkyl group, an heterocycloalkyl group, an aryl group, and an heteroaryl group.

Abstract: An apparatus for planarizing a substrate may include a supporting plate, an injection mechanism and a controller. The supporting plate may be configured to receive the substrate including a coating layer formed on the substrate before a hardening process. The supporting plate may have at least one of a function for controlling a temperature of the substrate, a function for rotating the substrate and a function for vibrating the substrate. The injection mechanism may inject a gas having a set temperature and a set pressure to the coating layer of the substrate to horizontally planarize the coating layer. The controller may control a movement, a temperature and a pressure of the injection mechanism, and the temperature control, the rotation control and the vibration control of the supporting plate.

Abstract: A method for forming a planarization layer includes: providing a substrate including a trench; coating a pre-thinner over a surface of the trench; forming a gap-filling material in the trench; coating a post-thinner over the gap-filling material; and performing a spinning process to rotate the substrate.

Abstract: Disclosed are a composition for coating a photoresist pattern and a method for forming a fine pattern using the same. The composition for coating a photoresist pattern includes a polymer compound containing a hydroxyl group and an ammonium base, and a solvent. The method for forming a fine pattern includes coating the composition on a previously formed photoresist pattern to thereby effectively reduce the size of a photoresist contact hole or space, and can be used in all semiconductor processes in which a fine pattern is required to be formed.

Abstract: A semiconductor integrated circuit device and a method of manufacturing the same are disclosed. A semiconductor wafer having a surface step is prepared. A first material layer is formed on an upper surface of the semiconductor wafer so that a protrusion is formed in a portion thereof corresponding to an edge region of the semiconductor wafer. A second material layer is formed on the first material layer.

Abstract: A wafer processing apparatus includes a particle charger for charging particles adsorbed onto a wafer with photoelectrons emitted from an emitter metal layer and a particle remover for applying an electric field to the wafer, which removes the charged particles from the wafer.

Abstract: A semiconductor integrated circuit device and a method of manufacturing the same are disclosed. A semiconductor wafer having a surface step is prepared. A first material layer is formed on an upper surface of the semiconductor wafer so that a protrusion is formed in a portion thereof corresponding to an edge region of the semiconductor wafer. A second material layer is formed on the first material layer.

Abstract: Disclosed are a composition for coating a photoresist pattern and a method for forming a fine pattern using the same. The composition for coating a photoresist pattern includes a polymer compound containing a hydroxyl group and an ammonium base, and a solvent The method for forming a fine pattern includes coating the composition on a previously formed photoresist pattern to thereby effectively reduce the size of a photoresist contact hole or space, and can be used in all semiconductor processes in which a fine pattern is required to be formed.

Abstract: A wafer processing apparatus includes a particle charger for charging particles adsorbed onto a wafer with photoelectrons emitted from an emitter metal layer and a particle remover for applying an electric field to the wafer, which removes the charged particles from the wafer.