Abstract: A light-emitting package includes a light-emitting structure having a first surface and a second surface opposite to the first surface. The light-emitting package further includes an electrode layer disposed on the first surface and an insulating layer disposed on the light-emitting structure and the electrode layer. The light-emitting package additionally includes an interconnection conductive layer penetrating the insulating layer and connected to the electrode layer and a reflective layer disposed between the insulating layer and the interconnection conductive layer. The reflective layer reflects light generated from the light-emitting structure in a direction toward the second surface.

Abstract: A metallic polypropylene resin composition is provided herein. The metallic polypropylene resin composition provides appearance characteristics that are similar to those provided by painting, but without painting. The metallic polypropylene resin composition of the present invention has excellent physical properties such as scratch resistance, and thus may be applied to molding methods, such as a molded in color (MIC) method. The resin composition is useful as a material for automobile interior and exterior parts, as wells as electric and electronic products, which can be molded by the MIC method.

Abstract: A metallic polypropylene resin composition is provided herein. The metallic polypropylene resin composition provides appearance characteristics that are similar to those provided by painting, but without painting. The metallic polypropylene resin composition of the present invention has excellent physical properties such as scratch resistance, and thus may be applied to molding methods, such as a molded in color (MIC) method. The resin composition is useful as a material for automobile interior and exterior parts, as wells as electric and electronic products, which can be molded by the MIC method.

Abstract: The present invention relates to a multiband antenna comprising: a reflector providing a ground plane; a first radiation module for a first frequency band, provided on the reflector; and a plurality of second radiation modules for a second frequency band, laminated on the first radiation module, wherein: the first radiation module includes first to fourth radiation elements symmetrically combined in four directions on an entire plane, wherein each of the first to fourth radiation elements includes a radiation arm in a cup shape and a support for supporting and fixing the radiation arm to the reflector, and the second radiation modules are provided to each radiation arm of the first to fourth radiation elements, wherein the lower surface of the cup shape of each radiation arm of the first to fourth radiation elements is designed to have a predetermined area for providing the ground plane to the second radiation modules.

Abstract: Semiconductor light-emitting devices, and semiconductor light-emitting packages, include at least one light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on a substrate, the at least one light-emitting structure having a first region and a second region delimiting the first region. The light-emitting device includes a groove in the second region, and the groove is adjacent to an edge of the substrate and extends parallel to the edge of the substrate.

Abstract: A method of manufacturing a semiconductor light emitting device is performed on a light emitting structure including a sequential stack of a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer are mesa-etched to expose a portion of the first conductivity-type semiconductor layer therethrough. A conductive layer is formed on the second conductivity-type semiconductor layer and the portion of the first conductivity-type semiconductor layer exposed by mesa-etching. In turn, the conductive layer is dry etched such that an upper surface of the first conductivity-type semiconductor layer is partially etched to have uneven portions formed thereon. The resulting semiconductor light emitting device has improved external light extraction efficiency while being easily manufactured.

Abstract: A semiconductor light emitting device may include an n-type semiconductor layer, an active layer and a p-type semiconductor layer disposed in a first region corresponding to a portion of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region distinct from the first region on the n-type semiconductor layer to be electrically connected to the n-type semiconductor layer and including an n-type electrode pad and first and second n-type electrode fingers, and a p-type electrode formed on the p-type semiconductor layer to be electrically connected to the p-type semiconductor layer and including a p-type electrode pad and a p-type electrode finger. A distance between n-type and p-type electrodes may be constant to significantly reduce a phenomenon of concentration of a current in a specific region of an electrode.

Abstract: A method of manufacturing a semiconductor light emitting device is performed on a light emitting structure including a sequential stack of a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer are mesa-etched to expose a portion of the first conductivity-type semiconductor layer therethrough. A conductive layer is formed on the second conductivity-type semiconductor layer and the portion of the first conductivity-type semiconductor layer exposed by mesa-etching. In turn, the conductive layer is dry etched such that an upper surface of the first conductivity-type semiconductor layer is partially etched to have uneven portions formed thereon. The resulting semiconductor light emitting device has improved external light extraction efficiency while being easily manufactured.

Abstract: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

Abstract: A semiconductor light emitting device may include: a light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed therebetween; a first electrode connected to one of the n-type semiconductor layer and the p-type semiconductor layer; and a second electrode connected to the other of the n-type semiconductor layer and the p-type semiconductor layer. The first electrode may include a first electrode pad disposed in a central portion of one side of the light emitting structure and first to third branch electrodes connected to the first electrode pad, having a fork shape. The second electrode may include second and third electrode pads disposed separately in both corners of the other side opposing the one side and fourth to seventh branch electrodes connected thereto. The fourth and seventh branch electrodes may extend in an interdigitated manner between the first to third branch electrodes.

Abstract: There is provided a nitride semiconductor light emitting device, capable of improving light extraction efficiency through a texture effect and including: a light emitting structure formed on a substrate and including a first conductivity-type nitride semiconductor layer and a second conductivity-type nitride semiconductor layer with an active layer interposed therebetween; a first electrode electrically connected to the first conductivity-type nitride semiconductor layer; a second electrode electrically connected to the second conductivity-type nitride semiconductor layer; and a light extraction pattern disposed between the first electrode and the second electrode and including a plurality of through holes formed by vertically penetrating the light emitting structure.

Abstract: There are provided a method of manufacturing a semiconductor light emitting device and a semiconductor light emitting device manufactured thereby. According to an exemplary embodiment, a method of manufacturing a semiconductor light emitting device includes: forming a light emitting structure by sequentially growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a first main surface of a substrate, the substrate having first and second main surfaces opposing one another; forming a reflective film on the second main surface of the substrate, the reflective film including at least one laser absorption region; and performing a scribing process separating the light emitting structure and the substrate into device units by irradiating a laser from a portion of a top of the light emitting structure corresponding to the laser absorption region to the light emitting structure and the substrate.

Abstract: A semiconductor light emitting device may include an n-type semiconductor layer, an active layer and a p-type semiconductor layer disposed in a first region corresponding to a portion of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region distinct from the first region on the n-type semiconductor layer to be electrically connected to the n-type semiconductor layer and including an n-type electrode pad and first and second n-type electrode fingers, and a p-type electrode formed on the p-type semiconductor layer to be electrically connected to the p-type semiconductor layer and including a p-type electrode pad and a p-type electrode finger. A distance between n-type and p-type electrodes may be constant to significantly reduce a phenomenon of concentration of a current in a specific region of an electrode.

Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, an insulating region formed along the outer edges of an upper surface of the second conductivity-type semiconductor layer, and an ohmic-electrode layer disposed on the second conductivity-type semiconductor layer.

Abstract: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

Abstract: There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A first electrode is electrically connected to the first conductivity-type semiconductor layer. A light-transmissive conductive layer is disposed on the second conductivity-type semiconductor layer. A second electrode includes a reflective metal layer and an insulating layer.

Abstract: A system and method for connecting a global positioning system (GPS) device with a digital image processing device and inputting position information into an image file captured by the digital image processing device. A system and method for inputting position information into a captured image employ a digital image processing device which generates an image file by capturing an image, and stores the image file, a GPS device which receives position information from a GPS satellite at regular time intervals; when the digital image processing device is connected with the GPS device, a GPS information storage unit which receives position information from the GPS device and stores the position information, and a GPS information input control unit which inputs position information excluding a timestamp, into an image file.

Abstract: There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

Abstract: There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.