Abstract: A vehicle foldable seat includes a seatback unit fixed to a vehicle body and coupled to a headrest and a seat cushion unit rotatably connected to the seatback unit. The seat cushion unit is fixed by elastic force in a stowing position, is selectively switched to a seating position when fixation thereof is released, and is engaged with the seatback unit to be fixed in the seating position.

Abstract: A seat for a vehicle, includes a second row center seat and a second row side seat provided on a partition wall positioned rearward of a driver seat, the second row center seat may move leftward or rightward, and an interval between the seats may be increased in a state in which the second row center seat is moved in a right direction away from the second row side seat, which makes it possible to maximally prevent body contact between a passenger in the second row center seat and a passenger in the second row side seat.

Abstract: Disclosed is a cushion tip-up type seat for a vehicle. The cushion tip-up type seat for a vehicle is configured to perform a tip-up function of a cushion part, and to move a seat leftward and rightward to adjust an interval between left and right seats, whereby left and right spacing between occupants seated in the seats is sufficiently secured and the convenience of the occupants is improved.

Abstract: The present disclosure relates to a vehicle rear seat including: a center seat; and side seats located on the left and right of the center seat, wherein, the center seat is capable of protruding by moving the center seat forward with respect to the side seats, and in the state in which the center seat protrudes forward, it is possible to increase an inter-passenger distance so that physical contact between the passenger of the center seat and the passenger of each of the side seats can be prevented as much as possible.

Abstract: The present invention is directed to providing to an align module of a medium deposition device which is capable of reducing a time to align a medium and improving reliability of medium alignment and allows a structure of a device for the medium alignment to be simplified.

Abstract: The present disclosure relates to a transit transfer path unit structure connecting a supply/collection cassette and a banknote transfer path of an upper main body in an ATM which includes the upper main body and a lower main body and has a structure in which the supply/collection cassette is mounted on one side of the lower main body. The transit transfer path unit is disposed on one side of the upper main body of the ATM, and detachably provided between the supply/collection cassette and the banknote transfer path provided in the upper main body for separation from a banknote transfer route. Thus, the upper main body may be easily pulled to the front or rear of the ATM without any interference with the transit transfer path unit to perform the maintenance work, enhancing the convenience of the maintenance of the ATM.

Abstract: The present invention is directed to providing to an align module of a medium deposition device which is capable of reducing a time to align a medium and improving reliability of medium alignment and allows a structure of a device for the medium alignment to be simplified.

Abstract: The present disclosure relates to a silicon compound represented by Formula 1 below: wherein R1 to R6 are each independently selected from a hydrogen, a hydrocarbyl group and a non-hydrocarbyl group, L is a direct bond or hydrocarbylene, X is oxygen (O) or sulfur (S), Y and Z are each independently selected from NR7, O, and S, where R7 is a hydrogen, a hydrocarbyl group, or a non-hydrocarbyl group, and Y and Z are not simultaneously NR7, and A is an n-valent radical, where n is an integer of 1 to 6.

Abstract: An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below: wherein: L1 to L3 are independently substituted or unsubstituted hydrocarbylene, R1 to R4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, and Xn? is an n-valent anion, where n is an integer of 1 to 3.

Abstract: An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1: wherein, in Formula 1, A is an n-valent radical, where n is an integer of 1 to 6, L is a direct bond or hydrocarbylene, Y is selected from NR1, O, PR2 and S, where R1 to R2 are independently hydrogen, halogen, a substituted unsubstituted hydrocarbyl group, or non-hydrocarbyl group, X and Z are independently selected from N, O, P and S, and Ra to Rc are independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group.

Abstract: An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1: wherein, in Formula 1, A is an n-valent radical, where n is an integer of 1 to 6, L is a direct bond or hydrocarbylene, Y is selected from NR1, O, PR2 and S, where R1 to R2 are independently hydrogen, halogen, a substituted or unsubstituted hydrocarbyl group, or non-hydrocarbyl group, X and Z are independently selected from N, O, P and S, and Ra to Rc are independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group.

Abstract: An etching composition is provided. The etching composition includes phosphoric acid, phosphoric anhydride, a silane compound represented by Formula 1 below and water: wherein R1 to R6 are independently hydrogen, halogen, a substituted or unsubstituted C1-C20 hydrocarbyl group, a C1-C20 alkoxy group, a carboxy group, a carbonyl group, a nitro group, a tri(C1-C20-alkyl)silyl group, a phosphoryl group, or a cyano group. L is a direct bond or C1 to C3 hydrocarbylene, and A is an n-valent radical, while n is an integer of 1 to 4.

Abstract: An etching composition providing a high selection ratio enabling selective removal of a nitride film and minimization of an etching rate, a preparation method thereof, an etching composition additive prepared through a reaction of phosphoric anhydride and a silane compound represented by Formula 1 below, a method for preparing the same and an etching composition including the same are provided:

Abstract: An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an organic phosphate represented by Formula 1 below: wherein R1 to R3 are independently hydrogen, or a substituted or unsubstituted hydrocarbyl group, and at least one of R1 to R3 is a substituted or unsubstituted hydrocarbyl group.

Abstract: An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below: wherein: L1 to L3 are independently substituted or unsubstituted hydrocarbylene, R1 to R4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, and Xn? is an n-valent anion, where n is an integer of 1 to 3.

Abstract: An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1: wherein, in Formula 1, A is an n-valent radical, where n is an integer of 1 to 6, L is a direct bond or hydrocarbylene, Y is selected from NR1, O, PR2 and S, where R1 to R2 are independently hydrogen, halogen, a substituted or unsubstituted hydrocarbyl group, or non-hydrocarbyl group, X and Z are independently selected from N, O, P and S, and Ra to Rc are independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group.

Abstract: The present disclosure relates to a silicon compound represented by Formula 1 below: wherein R1 to R6 are each independently selected from a hydrogen, a hydrocarbyl group and a non-hydrocarbyl group, L is a direct bond or hydrocarbylene, X is oxygen (O) or sulfur (S), Y and Z are each independently selected from NR7, O, and S, where R7 is a hydrogen, a hydrocarbyl group, or a non-hydrocarbyl group, and Y and Z are not simultaneously NR7, and A is an n-valent radical, where n is an integer of 1 to 6.

Abstract: An etchant composition includes phosphoric acid and a silane compound represented by the following Chemical Formula 1: wherein A is an n-valent radical, L is C1-C5 hydrocarbylene, R1 to R3 are independently hydrogen, hydroxy, hydrocarbyl, or alkoxy, in which R1 to R3 exist respectively or are connected to each other by a heteroelement, and n is an integer of 2 to 5.

Abstract: The present disclosure relates to a transit transfer path unit structure connecting a supply/collection cassette and a banknote transfer path of an upper main body in an ATM which includes the upper main body and a lower main body and has a structure in which the supply/collection cassette is mounted on one side of the lower main body. The transit transfer path unit is disposed on one side of the upper main body of the ATM, and detachably provided between the supply/collection cassette and the banknote transfer path provided in the upper main body for separation from a banknote transfer route. Thus, the upper main body may be easily pulled to the front or rear of the ATM without any interference with the transit transfer path unit to perform the maintenance work, enhancing the convenience of the maintenance of the ATM.

Abstract: An etching composition is provided. The etching composition includes phosphoric acid, phosphoric anhydride, a silane compound represented by Formula 1 below and water: wherein R1 to R6 are independently hydrogen, halogen, a substituted or unsubstituted C1-C20 hydrocarbyl group, a C1-C20 alkoxy group, a carboxy group, a carbonyl group, a nitro group, a tri(C1-C20-alkyl)silyl group, a phosphoryl group, or a cyano group. L is a direct bond or C1 to C3 hydrocarbylene, and A is an n-valent radical, while n is an integer of 1 to 4.