Abstract: The present invention relates to non-volatile memory device utilizing multi-layered self-assembled Ni1-xFex nanocrystalline arrays embedded in a polymer thin film without source and drain regions and the fabrication method thereof. It is possible to fabricate nano-crystallines more simply than hitherto method according to the present invention. More particularly, it is possible to control size and density of nano-crystallines without agglomeration of the crystallines since the crystallines, which have uniform distribution, are besieged to polymer layer. Furthermore, the present invention provides the non-volatile bistable memory device having chemical and electrical stability of higher efficiency and lower cost than conventional flash memory devices with a nano floating gate. Also, source and drain region is unnecessary in the device of the present invention, it can reduce the throughput time and cost.