Abstract: A multilayer ceramic electronic component includes a ceramic body including internal electrodes and dielectric layers, and an electrode layer disposed on at least one surface of the ceramic body and electrically connected to the internal electrodes. A conductive resin layer containing metal particles and a base resin is disposed on the electrode layer. When a weight ratio of metal to carbon in a surface portion of the conductive resin layer is defined as A, and a weight ratio of metal to carbon in an internal portion of the conductive resin layer is defined as B, A is greater than B.

Abstract: A multilayer ceramic capacitor includes a ceramic body including dielectric layers and internal electrodes; an electrode layer disposed on an outer surface of the ceramic body and electrically connected to the internal electrodes; a first composite resin layer disposed on the electrode layer and including a first conductive powder; and a second composite resin layer disposed on the first composite resin layer and including a second conductive powder different from the first conductive powder.

Abstract: There is provided a conductive paste composition for an external electrode, the conductive paste composition including a polymer resin, spherical first conductive metal particles included in the polymer resin and being hollow in at least a portion thereof, and second conductive metal particles of a flake shape included in the polymer resin and being hollow in at least a portion thereof.

Abstract: A wire wound inductor and a manufacturing method thereof. A wire wound inductor in accordance with an aspect of the present invention includes a magnetic core, a coil being wound and installed in the magnetic core, and a conductive resin layer being formed on each of both ends of the magnetic core for electrical connection with the coil. The conductive resin layer includes a head covering a surface of the end of the magnetic core and a band being extended from the head to a lateral surface of the end of the magnetic core, and the head is formed to be relatively thinner than the band.

Abstract: There are provided a chip electronic component including: a magnetic body including an insulating substrate and a conductive coil pattern which is disposed on at least one surface of the insulating substrate; and external electrodes disposed on both end portions of the magnetic body to be connected to end portions of the conductive coil pattern, wherein each of the external electrodes includes a first plating layer disposed on an end surface of the magnetic body to be connected to the conductive coil pattern and a conductive resin layer covering the first plating layer and extended to main surfaces of the magnetic body.

Abstract: There is provided a multilayer ceramic electronic component, including a ceramic body including dielectric layers; a plurality of internal electrodes stacked within the ceramic body, and external electrodes formed on external surfaces of the ceramic body and electrically connected to the internal electrodes, wherein the external electrodes include a metal layer and a conductive resin layer formed on the metal layer, the conducive resin layer containing a copper powder and an epoxy resin, the copper powder including a first copper powder having a content of 10 wt % or more and a particle diameter of 2 ?m or greater and a second copper powder having a content of 5 wt % or more and a particle diameter of 0.7 ?m or smaller, the first copper powder being a mixture of spherical powder particles and flake type powder particles.

Abstract: There is provided a multilayer ceramic capacitor including a ceramic body including dielectric layers, first and second internal electrodes formed within the ceramic body and disposed to face each other, having the dielectric layer interposed therebetween, first and second electrode layers disposed on outer surfaces of the ceramic body and electrically connected to the first and second internal electrodes, respectively, a conductive resin layer disposed on the first and second electrode layers and containing copper powder, a nickel plating layer disposed on an outer portion of the conductive resin layer, and a copper-nickel alloy layer disposed between the conductive resin layer and the nickel plating layer and having a thickness of 1 to 10 nm.

Abstract: There is provided a conductive resin composition including 10 to 50 wt % of a gel type silicon rubber such as polydimethylsiloxane (PDMS), and 50 to 90 wt % of conductive metal powder particles.

Abstract: Provided is a semiconductor device and method of fabricating the semiconductor memory device. The semiconductor device may be formed by forming a first welding groove along outside edges of one case of a pair of upper and lower cases, forming a first welding protrusion along outside edges of the other case, the first welding protrusion being formed to correspond to the first welding groove and having a volume larger than a volume of the first welding groove. The method may further include inserting the first welding protrusion into the first welding groove to enclose a memory module in an inner accommodating space of the upper and lower cases, melting the first welding protrusion so that a first portion of the first welding protrusion fills the first welding groove and a second portion of the first welding protrusion fills a space between welding portions of the upper case and the lower case, and solidifying the first and second portions of the first welding protrusion.

Abstract: There is provided a multilayer ceramic capacitor including: a ceramic body including dielectric layers and internal electrodes; an electrode layer disposed on an outer surface of the ceramic body and electrically connected to the internal electrodes; a first composite resin layer disposed on the electrode layer and including a first conductive powder; and a second composite resin layer disposed on the first composite resin layer and including a second conductive powder different from the first conductive powder.

Abstract: A multilayer ceramic electronic component includes a ceramic body including internal electrodes and dielectric layers, and an electrode layer disposed on at least one surface of the ceramic body and electrically connected to the internal electrodes. A conductive resin layer containing metal particles and a base resin is disposed on the electrode layer. When a weight ratio of metal to carbon in a surface portion of the conductive resin layer is defined as A, and a weight ratio of metal to carbon in an internal portion of the conductive resin layer is defined as B, A is greater than B.

Abstract: There is provided a conductive paste composition for an external electrode, the conductive paste composition including a polymer resin, spherical first conductive metal particles included in the polymer resin and being hollow in at least a portion thereof, and second conductive metal particles of a flake shape included in the polymer resin and being hollow in at least a portion thereof.

Abstract: There is provided a multilayer ceramic electronic component, including a ceramic body including dielectric layers; a plurality of internal electrodes stacked within the ceramic body, and external electrodes formed on external surfaces of the ceramic body and electrically connected to the internal electrodes, wherein the external electrodes include a metal layer and a conductive resin layer formed on the metal layer, the conducive resin layer containing a copper powder and an epoxy resin, the copper powder including a first copper powder having a content of 10 wt % or more and a particle diameter of 2 ?m or greater and a second copper powder having a content of 5 wt % or more and a particle diameter of 0.7 ?m or smaller, the first copper powder being a mixture of spherical powder particles and flake type powder particles.

Abstract: There is provided a multilayer ceramic capacitor including a ceramic body including dielectric layers, first and second internal electrodes formed within the ceramic body and disposed to face each other, having the dielectric layer interposed therebetween, first and second electrode layers disposed on outer surfaces of the ceramic body and electrically connected to the first and second internal electrodes, respectively, a conductive resin layer disposed on the first and second electrode layers and containing copper powder, a nickel plating layer disposed on an outer portion of the conductive resin layer, and a copper-nickel alloy layer disposed between the conductive resin layer and the nickel plating layer and having a thickness of 1 to 10 nm.

Abstract: There is provided a conductive resin composition including 10 to 50 wt % of a gel type silicon rubber such as polydimethylsiloxane (PDMS), and 50 to 90 wt % of conductive metal powder particles.

Abstract: There is provided conductive paste composition for an external electrode including: a first metal powder particle having a spherical shape and formed of a fine copper; and a second metal powder particle coated on a surface of the first metal powder particle and having a melting point lower than that of the copper.

Abstract: Provided is a semiconductor device and method of fabricating the semiconductor memory device. The semiconductor device may be formed by forming a first welding groove along outside edges of one case of a pair of upper and lower cases, forming a first welding protrusion along outside edges of the other case, the first welding protrusion being formed to correspond to the first welding groove and having a volume larger than a volume of the first welding groove. The method may further include inserting the first welding protrusion into the first welding groove to enclose a memory module in an inner accommodating space of the upper and lower cases, melting the first welding protrusion so that a first portion of the first welding protrusion fills the first welding groove and a second portion of the first welding protrusion fills a space between welding portions of the upper case and the lower case, and solidifying the first and second portions of the first welding protrusion.

Abstract: Provided is a semiconductor device and method of fabricating the semiconductor memory device. The semiconductor device may be formed by forming a first welding groove along outside edges of one case of a pair of upper and lower cases, forming a first welding protrusion along outside edges of the other case, the first welding protrusion being formed to correspond to the first welding groove and having a volume larger than a volume of the first welding groove. The method may further include inserting the first welding protrusion into the first welding groove to enclose a memory module in an inner accommodating space of the upper and lower cases, melting the first welding protrusion so that a first portion of the first welding protrusion fills the first welding groove and a second portion of the first welding protrusion fills a space between welding portions of the upper case and the lower case, and solidifying the first and second portions of the first welding protrusion.

Abstract: Provided is a semiconductor device and method of fabricating the semiconductor memory device. The semiconductor device may be formed by forming a first welding groove along outside edges of one case of a pair of upper and lower cases, forming a first welding protrusion along outside edges of the other case, the first welding protrusion being formed to correspond to the first welding groove and having a volume larger than a volume of the first welding groove. The method may further include inserting the first welding protrusion into the first welding groove to enclose a memory module in an inner accommodating space of the upper and lower cases, melting the first welding protrusion so that a first portion of the first welding protrusion fills the first welding groove and a second portion of the first welding protrusion fills a space between welding portions of the upper case and the lower case, and solidifying the first and second portions of the first welding protrusion.