Abstract: A laser irradiation apparatus provides a laser beam along a scan direction to a semiconductor layer including a plurality of pixel areas. The laser irradiation apparatus includes at least one laser mask including a plurality of slit groups respectively facing portions of the plurality of pixel areas and a laser generator generating the laser beam that pass through the plurality of slit groups of the at least one laser mask.

Abstract: Disclosed are a polycrystalline silicon and a crystallization method thereof according to an exemplary embodiment of the present invention. The polycrystalline silicon comprises: an insulating substrate; and an optical portion formed on the insulating substrate for receiving a CW laser beam and varying the intensity of the beam in order of strength-weakness, strength-weakness, and strength-weakness on one dimension, so that an amorphous silicon thin film is crystallized. Therefore, the present invention can form a good polycrystalline silicon thin film by growing crystal grains with a constant direction and size, when an amorphous silicon thin film disposed on an insulating film such as a glass substrate is crystallized to a polycrystalline silicon thin film.

Abstract: A paste for solar cell electrodes includes a conductive powder, a glass frit, the glass frit including a crystallized glass frit, and an organic vehicle.

Abstract: Provided are a crystallization apparatus and method, which prevent cracks from being generated, a method of manufacturing a thin film transistor (TFT), and a method of manufacturing an organic light emitting display apparatus. The crystallization apparatus includes a chamber for receiving a substrate, a first flash lamp and a second flash lamp, which are disposed facing each other within the chamber, wherein amorphous silicon layers are disposed on a first surface of the substrate facing the first flash lamp and a second surface of the substrate facing the second flash lamp, respectively.

Abstract: Disclosed herein is a method of crystallizing an amorphous material for use in fabrication of thin film transistors. The method includes forming an amorphous silicon layer on a substrate, depositing a Ni metal layer on part of the amorphous silicon layer, and heat-treating the amorphous silicon layer to cause phase transition of the amorphous silicon, wherein the Ni metal layer is deposited to an average thickness of 0.79 ? or less. The method can crystallize an amorphous material for use in thin film transistors using the metal induced lateral crystallization while restricting thickness and density of Ni, thereby minimizing current leakage in the thin film transistor.

Abstract: A laser crystallization apparatus for crystallizing a thin film of a substrate, the laser crystallization apparatus includes a laser beam emitting unit configured to scan the substrate in a predetermined direction with a laser beam, a stage configured to support the substrate, a fixing part disposed on a first part of the stage, the fixing part having a shape corresponding to a corner of the substrate, and a driving unit configured to lift a second part of the stage to be higher than the first part of the stage, the substrate on the stage being configured to slide toward and engage with the fixing part.

Abstract: A paste for solar cell electrodes includes conductive particles, a glass frit, an organic vehicle, and lead oxide. The lead oxide may be added in an amount of about 0.05 to about 1.5 wt % with respect to a total weight of the paste.

Abstract: The present invention relates to an organic-inorganic hybrid transparent hydrogel complex containing a polymerizable acrylic monomer, a metal alkoxide sol solution, a water-soluble salt, a phosphorus compound, a silane coupling agent, a quaternary ammonium salt, a polymerization initiator, and water. Moreover, the present invention provides a fire retardant glass assembly using the organic-inorganic hybrid transparent hydrogel complex and a manufacturing method thereof. The organic-inorganic hybrid transparent hydrogel complex according to the present invention has excellent properties such as long-term transparency, flame-retardancy, thermal insulation, long-term durability, and weather resistance, and thus it can be suitably used as a fire retardant material for fire retardant glass.

Abstract: Disclosed is a non-photosensitive black electrode composition and a plasma display panel having a black electrode formed using the composition. The black electrode for the plasma display panel includes the non-photosensitive composition, thus yellowing does not occur on electrodes but conductivity to a transparent electrode layer is desirably assured even though typical conductive powder and various types of black pigments are used. It is possible to conduct patterning using a photolithography process due to the simultaneous development of black and bus electrodes, which can act as electrodes due to simultaneous sintering. Since it is non-photosensitive, it is possible to use various types of black pigments, thus the material cost is reduced.

Abstract: A paste composition for an electrode, a PDP including the electrode, and associated methods, the paste composition including a conductive material, a black pigment, a glass frit, and an organic binder, wherein the black pigment includes a magnetic black pigment, the magnetic black pigment being included in an amount of about 0.1 to about 20 wt %, based on the total weight of the composition.

Abstract: Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) is formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.

Abstract: Disclosed is a non-photosensitive black electrode composition and a plasma display panel having a black electrode formed using the composition. The black electrode for the plasma display panel includes the non-photosensitive composition, thus yellowing does not occur on electrodes but conductivity to a transparent electrode layer is desirably assured even though typical conductive powder and various types of black pigments are used. It is possible to conduct patterning using a photolithography process due to the simultaneous development of black and bus electrodes, which can act as electrodes due to simultaneous sintering. Since it is non-photosensitive, it is possible to use various types of black pigments, thus the material cost is reduced.

Abstract: Disclosed is a non-photosensitive black electrode composition and a plasma display panel having a black electrode formed using the composition. The black electrode for the plasma display panel includes the non-photosensitive composition, thus yellowing does not occur on electrodes but conductivity to a transparent electrode layer is desirably assured even though typical conductive powder and various types of black pigments are used. It is possible to conduct patterning using a photolithography process due to the simultaneous development of black and bus electrodes, which can act as electrodes due to simultaneous sintering. Since it is non-photosensitive, it is possible to use various types of black pigments, thus the material cost is reduced.

Abstract: A contrast compensation apparatus and a method thereof utilize a simplified hardware structure and a low contrast distortion. The contrast compensation apparatus includes a pixel value detection unit to detect a distribution of pixel values of respective pixels of an input image signal, a pixel value limit unit having pre-set luminance limit values and re-configuring the distribution of the pixel values of the respective pixels based on the pre-set luminance limit values, and a mapping unit to set luminance for the respective pixels based on a cumulative distribution function with respect to the re-configured pixel values. When certain portions of an image are rendered very bright or dark, the phenomenon in which the entire image becomes abruptly bright or dark is reduced. Further, the contrast compensation apparatus uses the minimum number of multipliers, adders, and subtractors only, thus having an advantage of simplified structure and using less electric power.

Abstract: An apparatus for color compensation includes a chroma deflection generation unit to calculate a chroma deflection based on an input chroma signal and a predetermined first reference value, a hue deflection generation unit to calculate a hue deflection based on an input hue signal and a predetermined second reference value, a chroma deflection function generation unit to calculate a luminance deflection based on an input luminance signal and a predetermined third value, and a tone mapping function generation unit to output the chroma signal, hue signal and luminance signal after individually compensating these signals based on the chroma deflection, hue deflection and luminance deflection. According to the present invention, when color is distorted due to transmission flaws, the color can be compensated to be an appropriate color.

Abstract: Disclosed are a polycrystalline silicon and a crystallization method thereof according to an exemplary embodiment of the present invention. The polycrystalline silicon comprises: an insulating substrate; and an optical portion formed on the insulating substrate for receiving a CW laser beam and varying the intensity of the beam in order of strength-weakness, strength-weakness, and strength-weakness on one dimension, so that an amorphous silicon thin film is crystallized. Therefore, the present invention can form a good polycrystalline silicon thin film by growing crystal grains with a constant direction and size, when an amorphous silicon thin film disposed on an insulating film such as a glass substrate is crystallized to a polycrystalline silicon thin film.

Abstract: A quantization error compensation includes a dividing unit to divide an input current image signal into a first high-frequency signal and a low-frequency signal; a changing unit to replace bits of the first high-frequency signal with a predetermined signal to output a second high-frequency signal; an adding unit to add the low-frequency signal and the second high-frequency signal to create a composite signal; a quantization unit to cut n number of bits of the composite signal and to output the cut composite signal and the n number of bit signal; an equalizing unit to output a brightness equalizing value of the cut composite signal; a calculating unit to calculate a compensation value using the n number of the bit signal and a difference between brightness equalizing values with respect to a current and next brightness levels; and a compensation unit to add the compensation and the current brightness equalizing values.

Abstract: Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.

Abstract: An apparatus and method to enhance a contrast includes a first operation part, a second operation part, and a mapping part. The first operation part calculates an average and a standard deviation of an input image. The second operation part calculates an average and a standard deviation of a target image based on the average and the standard deviation of the input image. The mapping part converts a pixel value of the input image by a mapping function generated by receiving the averages and the standard deviations of the input image and the target image from the first operation part and the second operation part, respectively, and outputs a pixel value of an output image.

Abstract: A black/white stretching system using R, G, B information and a method thereof. The black/white stretching system includes a first transformer to transform a luminance value and a color difference value of an input image to R, G, B values of each pixel, a histogram estimator to estimate a histogram distribution by accumulating each of the transformed R, G, B values of each pixel of the input image with a same weight, a mapper to generate mapped R?, G?, B? values by mapping the transformed R, G, B values according to a mapping function generated based on the estimated histogram distribution, and a second transformer to generate an output image by reverse-transforming the mapped R?, G?, B? values from the mapper to an updated luminance signal and an updated color difference signal. Therefore, the black/white stretching system prevents color distortion generated in a primary color image using only luminance information.