Abstract: Disclosed is an intelligent display board capable of increasing visibility by responding to external environmental factors in real time. The intelligent display board aims to improve a displayed image by minimizing differences in the characteristics of a display element (LED) according to the influence of external sunlight and artificial lighting and temperature. The white color of the display board is moved to be closed to a reference if deviating the reference so that low-level colors that are ignored by sunlight, etc. are darkened and the variance of recognizable colors is increased to make it easy to distinguish, thereby increasing the visibility of the display board. In addition, luminance varying according to temperature is adjusted to compensate for and adjust an image while automatically being applicable to a surrounding environment even with respect to temperature, thereby increasing the quality of an image displayed on the display board.

Abstract: A pad liner for a brake apparatus may include: a body part brought into contact with a torque member; a pair of insertion parts connected to the body part such that a part of the torque member is inserted into the insertion parts; a pair of guide parts connected to the pair of insertion parts, respectively, and configured to guide a brake pad; a pair of support parts connected to the pair of guide parts, respectively, and configured to support the brake pad; and a pair of return parts connected to the pair of insertion parts, respectively, located on facing sides of the insertion parts, and configured to provide a return force to the same point of the brake pad when the brake pad is moved.

Abstract: The present disclosure relates to a heat transfer tube having rare-earth oxide deposited on a surface thereof and a method for manufacturing the same, in which the rare-earth oxide can be deposited on the surface of the heat transfer tube to implement a superhydrophobic surface even under the high temperature environment and a plurality of assembled heat transfer tubes can be coated by coating a complex shape by depositing rare-earth oxide using a method for dipping a surface of the heat transfer tube and coating the same, thereby reducing or preventing the heat transfer tubes from being damaged during the assembling of the heat transfer tubes after the coating.

Abstract: A brake pad for a brake apparatus may include: a friction member brought into contact with a brake disk; a back plate coupled to the friction member, and movably mounted on a torque member or a pad liner coupled to the torque member; a slide guide shim mounted on the back plate; and a slide shim movably mounted on the back plate, covering the slide guide shim, and slidably disposed on the slide guide shim.

Abstract: A brake pad for a brake apparatus may include: a friction member brought into contact with a brake disk; a back plate coupled to the friction member, and movably mounted on a torque member or a pad liner coupled to the torque member; a slide guide shim mounted on the back plate; and a slide shim movably mounted on the back plate, covering the slide guide shim, and slidably disposed on the slide guide shim.

Abstract: A pad liner for a brake apparatus may include: a body part brought into contact with a torque member; a pair of insertion parts connected to the body part such that a part of the torque member is inserted into the insertion parts; a pair of guide parts connected to the pair of insertion parts, respectively, and configured to guide a brake pad; a pair of support parts connected to the pair of guide parts, respectively, and configured to support the brake pad; and a pair of return parts connected to the pair of insertion parts, respectively, located on facing sides of the insertion parts, and configured to provide a return force to the same point of the brake pad when the brake pad is moved.

Abstract: The present disclosure relates to a heat transfer tube comprising nanostructures formed on the surface, and a method for manufacturing the same, and by forming nanostructures on a heat transfer tube surface, a superhydrophobic surface may be obtained under a high temperature environment as well. In addition, superhydrophobicity may be enhanced by further forming a hydrophobic coating layer on the nanostructure-formed heat transfer tube surface. By using a method of forming nanostructures by dipping the heat transfer tube surface, complex shapes may be coated, and therefore, a plurality of assembled heat transfer tubes may be coated, and damages occurring during a process of assembling the heat transfer tube after coating may be prevented.

Abstract: The present disclosure relates to a heat transfer tube having rare-earth oxide deposited on a surface thereof and a method for manufacturing the same, in which the rare-earth oxide can be deposited on the surface of the heat transfer tube to implement a superhydrophobic surface even under the high temperature environment and a plurality of assembled heat transfer tubes can be coated by coating a complex shape by depositing rare-earth oxide using a method for dipping a surface of the heat transfer tube and coating the same, thereby reducing or preventing the heat transfer tubes from being damaged during the assembling of the heat transfer tubes after the coating.

Abstract: The present disclosure relates to a heat transfer tube having rare-earth oxide deposited on a surface thereof and a method for manufacturing the same, in which the rare-earth oxide can be deposited on the surface of the heat transfer tube to implement a superhydrophobic surface even under the high temperature environment and a plurality of assembled heat transfer tubes can be coated by coating a complex shape by depositing rare-earth oxide using a method for dipping a surface of the heat transfer tube and coating the same, thereby reducing or preventing the heat transfer tubes from being damaged during the assembling of the heat transfer tubes after the coating.

Abstract: The present disclosure relates to a heat transfer tube comprising nanostructures formed on the surface, and a method for manufacturing the same, and by forming nanostructures on a heat transfer tube surface, a superhydrophobic surface may be obtained under a high temperature environment as well. In addition, superhydrophobicity may be enhanced by further forming a hydrophobic coating layer on the nanostructure-formed heat transfer tube surface. By using a method of forming nanostructures by dipping the heat transfer tube surface, complex shapes may be coated, and therefore, a plurality of assembled heat transfer tubes may be coated, and damages occurring during a process of assembling the heat transfer tube after coating may be prevented.

Abstract: The present disclosure relates to a heat transfer tube having rare-earth oxide deposited on a surface thereof and a method for manufacturing the same, in which the rare-earth oxide can be deposited on the surface of the heat transfer tube to implement a superhydrophobic surface even under the high temperature environment and a plurality of assembled heat transfer tubes can be coated by coating a complex shape by depositing rare-earth oxide using a method for dipping a surface of the heat transfer tube and coating the same, thereby reducing or preventing the heat transfer tubes from being damaged during the assembling of the heat transfer tubes after the coating.

Abstract: Embodiments relate to a semiconductor device. In embodiments, a semiconductor device may include a semiconductor substrate having isolation layers and a well region, a gate electrode formed within a trench having a predetermined depth in the well region, source/drain regions formed at both sides of the trench, respectively, an interlayer dielectric layer formed on the semiconductor substrate to have predetermined contact holes, and metal interconnections formed within the contact holes, respectively.

Abstract: Embodiments relate to a semiconductor device. In embodiments, a semiconductor device may include a semiconductor substrate having isolation layers and a well region, a gate electrode formed within a trench having a predetermined depth in the well region, source/drain regions formed at both sides of the trench, respectively, an interlayer dielectric layer formed on the semiconductor substrate to have predetermined contact holes, and metal interconnections formed within the contact holes, respectively.

Abstract: Embodiments relate to a semiconductor device and a method for manufacturing the same. According to embodiments, a semiconductor device may include an active area defined on a semiconductor substrate by a first isolation layer and a second isolation layer, a diode in the active area placed at one side of the first isolation layer, a transfer gate formed at one side of the diode, and an electrode on the diode and the transfer gate.

Abstract: Disclosed is a method for forming a nano-crystal. In the above method, there is prepared a substrate having a metal film or a semiconductor film formed thereon. A focused-ion beam is irradiated onto a plurality of positions on a surface of the metal film or the semiconductor film, whereby the metal film or the semiconductor film is removed at a focal portion of the focused-ion beam but an atomic bond in the metal film or the semiconductor film is broken at an overlapping region of the focused-ion beams due to an radiation effect of the focused-ion beam to form the nano-crystal. The method allows a few nm or less-sized nano-crystals to be formed with ease and simplicity using the focused-ion beam. As a result, the formed nano-crystals come to have a binding energy capable of restraining thermal fluctuation phenomenon at room temperature and thereby it becomes possible to fabricate a tunneling transistor capable of being operated at room temperature.

Abstract: Disclosed is a method for fabricating a single electron tunneling transistor. In the above method, an insulating layer and a conductive layer are orderly formed on a substrate. The conductive layer is patterned such that the insulating layer is exposed, to form a T-shaped conductive pattern of which a first portion arranged in a vertical direction is connected to a middle portion of a second portion arranged in a horizontal direction. A focused-ion beam is irradiated onto the connected middle portion of the T-shaped conductive pattern such that the second portion is cut at a middle portion thereof and the first portion is separated from the first portion, to form nano-crystal regions respectively at a first cut portion of the first pattern and a second cut portion of the second pattern using an irradiation effect of the focused-ion beam.

Abstract: Disclosed is a method for forming a nano-crystal. In the above method, there is prepared a substrate having a metal film or a semiconductor film formed thereon. A focused-ion beam is irradiated onto a plurality of positions on a surface of the metal film or the semiconductor film, whereby the metal film or the semiconductor film is removed at a focal portion of the focused-ion beam but an atomic bond in the metal film or the semiconductor film is broken at an overlapping region of the focused-ion beams due to an radiation effect of the focused-ion beam to form the nano-crystal. The method allows a few nm or less-sized nano-crystals to be formed with ease and simplicity using the focused-ion beam. As a result, the formed nano-crystals come to have a binding energy capable of restraining thermal fluctuation phenomenon at room temperature and thereby it becomes possible to fabricate a tunneling transistor capable of being operated at room temperature.