Abstract: New composition and methods are provided that include antireflective compositions that can exhibit enhanced etch rates in standard plasma etchants. Preferred antireflective coating compositions of the invention have decreased carbon content relative to prior compositions.

Abstract: Underlayer coating compositions are provided that comprise 1) a resin; and a solvent component comprising one or more solvents having a boiling of 200° C. or greater. Coating compositions are particularly useful with overcoated photoresist compositions imaged with EUV.

Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise 1) one or more resins and 2) one or more substituted isocyanurate compounds that are distinct from the 1) one or more resins.

Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise 1) one or more resins and 2) one or more PDQ compounds that are distinct from the 1) one or more resins.

Abstract: In a preferred aspect, organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise 1) one or more substituted uracil moieties; and 2) one or more reacted dicarboxylic acid groups.

Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise 1) one or more resins and 2) one or more substituted isocyanurate compounds that are distinct from the 1) one or more resins.

Abstract: Provided is a method of obtaining state data indicating a state of a user. The method includes: obtaining estimation models for obtaining pieces of state data existing in a plurality of layers from sensor data obtained by a sensor; obtaining at least one piece of sensor data; obtaining state data of a lower layer from the at least one piece of sensor data, based on the estimation models; and obtaining state data of a higher layer from the state data of the lower layer, based on the estimation models.

Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that a blend of two or more resins, where one resin has epoxy groups either pendant or fused to the polymer backbone. Preferred coating compositions include: 1) a first resin that comprises one or more epoxy reactive groups; and 2) a crosslinker resin that is distinct from the first resin and comprises epoxy groups.

Abstract: In a preferred aspect, organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise 1) one or more glycidyl groups; and 2) one or more aromatic groups that each comprises two or more substituents that comprise hydroxy, thiol and/or amine moieties. Catechol-containing polymers and methods for producing same also are provided.

Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that comprise a crosslinker component that comprises a structure of the following Formula (I):

Abstract: Gap-fill methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a non-crosslinked crosslinkable polymer, an acid catalyst, a crosslinker and a solvent, wherein the crosslinkable polymer comprises a first unit of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and Ar1 is an optionally substituted aryl group that is free of crosslinkable groups; and a second unit of the following general formula (II): wherein: R3 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and R4 is chosen from optionally substituted C1 to C12 linear, branched or cyclic alkyl, and optionally substituted C6 to C15 aryl, optionally containing heteroatoms, wherein at least one hydrogen atom is substituted with a functional group

Abstract: Provided are gap-fill methods.

Abstract: Provided are gap-fill methods.

Abstract: Gap-fill methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a non-crosslinked crosslinkable polymer, an acid catalyst, a crosslinker and a solvent, wherein the crosslinkable polymer comprises a first unit of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and Ar1 is an optionally substituted aryl group that is free of crosslinkable groups; and a second unit of the following general formula (II): wherein: R3 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and R4 is chosen from optionally substituted C1 to C12 linear, branched or cyclic alkyl, and optionally substituted C6 to C15 aryl, optionally containing heteroatoms, wherein at least one hydrogen atom is substituted with a functional group i

Abstract: An anti-reflective coating composition is provided. The anti-reflective coating composition of the present invention can be useful in preventing a pull-back phenomenon in which an anti-reflective coating layer tears on a corner of a pattern of a substrate during a heat curing process and improving gap-filling performance of the pattern since a crosslinker is attached to a polymer in the composition and the content of the low-molecular-weight crosslinker in the composition is minimized to regulate a heat curing initiation temperature.