Patents by Inventor Jae Hyoung Lim
Jae Hyoung Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240079331Abstract: A semiconductor device includes: first and second active patterns spaced apart from each other in a third direction; a gate electrode covering the first and second active patterns and extending in a second direction; a first source/drain region disposed on opposing sides of the gate electrode and connected to the first active pattern; a second source/drain region disposed on opposing sides of the gate electrode and connected to the second active pattern; a plurality of first upper metal lines extending in a first direction on the second active pattern and spaced apart from each other in the second direction; and a lower metal line extending in the first direction on the first active pattern, wherein the first direction, the second direction and the third direction intersect each other.Type: ApplicationFiled: May 11, 2023Publication date: March 7, 2024Inventors: Azmat RAHEEL, Jae Hyoung LIM, Kwan Young CHUN
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Patent number: 10170421Abstract: A logic semiconductor device includes a plurality of active patterns extending in a horizontal direction and being spaced apart from each other in a vertical direction, an isolation layer defining the active patterns, a plurality of gate patterns extending in the vertical direction on the active patterns and the isolation layer, the gate patterns being spaced apart from each other in the horizontal direction, a plurality of lower wirings extending in the horizontal direction over the gate patterns, a plurality of upper wirings extending in the vertical direction over the lower wirings, a through contact connecting at least one upper wiring of the upper wirings and at least one gate pattern of the gate patterns, the through contact extending from a bottom surface of the upper wiring to a position under a bottom surface of one of the lower wirings relative to the active patterns.Type: GrantFiled: July 12, 2017Date of Patent: January 1, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Raheel Azmat, Sengupta Rwik, Su-Hyeon Kim, Chul-Hong Park, Jae-Hyoung Lim
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Publication number: 20170309569Abstract: A logic semiconductor device includes a plurality of active patterns extending in a horizontal direction and being spaced apart from each other in a vertical direction, an isolation layer defining the active patterns, a plurality of gate patterns extending in the vertical direction on the active patterns and the isolation layer, the gate patterns being spaced apart from each other in the horizontal direction, a plurality of lower wirings extending in the horizontal direction over the gate patterns, a plurality of upper wirings extending in the vertical direction over the lower wirings, a through contact connecting at least one upper wiring of the upper wirings and at least one gate pattern of the gate patterns, the through contact extending from a bottom surface of the upper wiring to a position under a bottom surface of one of the lower wirings relative to the active patterns.Type: ApplicationFiled: July 12, 2017Publication date: October 26, 2017Inventors: Raheel Azmat, Sengupta RWIK, Su-Hyeon KIM, Chul-Hong PARK, Jae-Hyoung LIM
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Patent number: 9741661Abstract: A logic semiconductor device includes a plurality of active patterns extending in a horizontal direction and being spaced apart from each other in a vertical direction, an isolation layer defining the active patterns, a plurality of gate patterns extending in the vertical direction on the active patterns and the isolation layer, the gate patterns being spaced apart from each other in the horizontal direction, a plurality of lower wirings extending in the horizontal direction over the gate patterns, a plurality of upper wirings extending in the vertical direction over the lower wirings, a through contact connecting at least one upper wiring of the upper wirings and at least one gate pattern of the gate patterns, the through contact extending from a bottom surface of the upper wiring to a position under a bottom surface of one of the lower wirings relative to the active patterns.Type: GrantFiled: June 21, 2016Date of Patent: August 22, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Raheel Azmat, Sengupta Rwik, Su-Hyeon Kim, Chul-Hong Park, Jae-Hyoung Lim
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Publication number: 20170117223Abstract: A logic semiconductor device includes a plurality of active patterns extending in a horizontal direction and being spaced apart from each other in a vertical direction, an isolation layer defining the active patterns, a plurality of gate patterns extending in the vertical direction on the active patterns and the isolation layer, the gate patterns being spaced apart from each other in the horizontal direction, a plurality of lower wirings extending in the horizontal direction over the gate patterns, a plurality of upper wirings extending in the vertical direction over the lower wirings, a through contact connecting at least one upper wiring of the upper wirings and at least one gate pattern of the gate patterns, the through contact extending from a bottom surface of the upper wiring to a position under a bottom surface of one of the lower wirings relative to the active patterns.Type: ApplicationFiled: June 21, 2016Publication date: April 27, 2017Inventors: Raheel Azmat, Sengupta RWIK, Su-Hyeon KIM, Chul-Hong PARK, Jae-Hyoung LIM
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Patent number: 8587698Abstract: An image sensor is provided. A first storage unit stores an image information value corresponding to an image signal provided from a pixel, and a second storage unit stores a reset information value corresponding to a reset signal provided from the pixel. A differential signal comparison unit receives image information value and the reset information value, compares the two values, and outputs a difference value therebetween. A switch unit is switched so that the two input values are transferred in a crossed manner in a first operation period and a second operation period. A digital value providing unit combines a first digital value, which corresponds to an output timing of a first comparison signal in the first operation period, and a second digital value, which corresponds to an output timing of a second comparison signal in the second operation period, and output a digital value corresponding to image information received at the pixel.Type: GrantFiled: June 14, 2011Date of Patent: November 19, 2013Assignee: SK Hynix Inc.Inventor: Jae Hyoung Lim
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Patent number: 8174879Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).Type: GrantFiled: October 26, 2009Date of Patent: May 8, 2012Assignee: Hynix Semiconductor Inc.Inventors: Hee Bok Kang, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
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Publication number: 20110317036Abstract: An image sensor is provided. A first storage unit stores an image information value corresponding to an image signal provided from a pixel, and a second storage unit stores a reset information value corresponding to a reset signal provided from the pixel. A differential signal comparison unit receives image information value and the reset information value, compares the two values, and outputs a difference value therebetween. A switch unit is switched so that the two input values are transferred in a crossed manner in a first operation period and a second operation period. A digital value providing unit combines a first digital value, which corresponds to an output timing of a first comparison signal in the first operation period, and a second digital value, which corresponds to an output timing of a second comparison signal in the second operation period, and output a digital value corresponding to image information received at the pixel.Type: ApplicationFiled: June 14, 2011Publication date: December 29, 2011Applicant: Hynix Semiconductor Inc.Inventor: Jae Hyoung LIM
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Publication number: 20100103720Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR to (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).Type: ApplicationFiled: October 26, 2009Publication date: April 29, 2010Applicant: Hynix Semiconductor Inc.Inventors: Hee Bok KANG, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
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Patent number: 7609547Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).Type: GrantFiled: December 21, 2007Date of Patent: October 27, 2009Assignee: Hynix Semiconductor Inc.Inventors: Hee Bok Kang, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
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Patent number: 7382641Abstract: A non-volatile ferroelectric memory device senses a cell data at high speed. Preferably, the non-volatile ferroelectric memory device includes a plurality of cell array blocks, a plurality of sense amplifier units, a plurality of sense amplifier units, a plurality of local data buses, a global data bus, and a plurality of data bus switch arrays. Each of the plurality of cell array blocks has a hierarchical bit line architecture including sub bit lines and a main bit line group corresponding to a plurality of unit cells for storing differential data. The plurality of sense amplifier units, corresponding one-by-one to the cell array blocks, sense and amplify the differential data induced on the main bit line group during a sensing operation. The plurality of local data buses, corresponding one-by-one to the sense amplifier units, transfer the differential data outputted from the sense amplifier units and differential data to be transferred to the sense amplifier units.Type: GrantFiled: June 30, 2004Date of Patent: June 3, 2008Assignee: Hynix Semiconductor Inc.Inventors: Hee Bok Kang, Dong Yun Jeong, Jae Hyoung Lim
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Patent number: 7333361Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).Type: GrantFiled: February 21, 2006Date of Patent: February 19, 2008Assignee: Hynix Semiconductor Inc.Inventors: Hee Bok Kang, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
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Patent number: 7212450Abstract: Disclosed is a non-volatile ferroelectric memory device having differential data, the device including: a plurality of cell array block groups having a hierarchy bit line structure and storing differential data; a common data bus being shared by a plurality of the cell array block groups, and transferring sensing voltages induced by the differential data; a column selection control unit selectively applying to the common data bus the induced sensing voltages of two main bit lines of the cell array block group according to the differential data; and a sense amp unit receiving the sensing voltages through the common data bus, comparing two sensing voltages induced by the differential data, and sensing the cell data. Therefore, the non-volatile ferroelectric memory device of the invention is capable of sensing a cell data more stably, independent of external factors and the state of a cell, by simultaneously sensing the stored data (differential data) in two unit cells and detecting the cell data.Type: GrantFiled: June 30, 2004Date of Patent: May 1, 2007Assignee: Hynix Semiconductor Inc.Inventors: Jae Hyoung Lim, Dong Yun Jeong, Hee Bok Kang
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Patent number: 7212428Abstract: A non-volatile ferroelectric memory device having differential datacomprises a plurality of cell array blocks and a data buffer unit. Each of the plurality of cell array blocks includes cell arrays and sense amplifiers. The cell array has a hierarchical bit line architecture and are divided into top and bottom groups where differential data are stored in a plurality of unit cells corresponding to differential main bit lines of the divided cell arrays. The sense amplifiers are positioned between the divided cell array groups for sensing the differential data. The data buffer unit temporarily stores a read data sensed by the sense amplifier and a write data received through a data I/O port.Type: GrantFiled: June 28, 2004Date of Patent: May 1, 2007Assignee: Hynix Semiconductor Inc.Inventors: Dong Yun Jeong, Jae Hyoung Lim, Hee Bok Kang
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Patent number: 7031186Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).Type: GrantFiled: August 29, 2003Date of Patent: April 18, 2006Assignee: Hynix Semiconductor Inc.Inventors: Hee Bok Kang, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim
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Publication number: 20040120185Abstract: A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline).Type: ApplicationFiled: August 29, 2003Publication date: June 24, 2004Inventors: Hee Bok Kang, Dong Yun Jeong, Jae Hyoung Lim, Young Jin Park, Kye Nam Lee, In Woo Jang, Seaung Suk Lee, Chang Shuk Kim