Abstract: The present invention relates to technology for fabricating a gallium nitride substrate using an ion implantation process to which a self-separation technique is applied. According to the present invention, a method of fabricating a gallium nitride substrate may include a step of forming a first gallium nitride layer on a substrate, a step of implanting hydrogen ions into the first gallium nitride layer to form a separation layer, a step of grinding the edges of the substrate, the first gallium nitride layer, and the separation layer, a step of forming a second gallium nitride layer on the first gallium nitride layer having a ground edge, and a step of self-separating the second gallium nitride layer from the first gallium nitride layer having a ground edge.

Abstract: Disclosed is a method of fabricating a gallium nitride substrate using a plurality of ion implantation processes.

Abstract: Disclosed is a method of fabricating a gallium nitride substrate using a plurality of ion implantation processes.

Abstract: Disclosed a method of fabricating a gallium nitride substrate using hydride vapor phase epitaxy (HVPE), including a step of injecting ammonia (NH3) gas to perform first surface treatment on a sapphire substrate; a step of injecting ammonia gas and hydrogen chloride (HCl) gas to form a buffer layer on the sapphire substrate; a step of injecting ammonia gas to perform second surface treatment on the sapphire substrate; and a step of allowing gallium nitride (GaN) to grow on the sapphire substrate while lowering the flow rate ratio of ammonia gas to hydrogen chloride gas stepwise.

Abstract: Disclosed a method of fabricating a gallium nitride substrate using hydride vapor phase epitaxy (HVPE), including a step of injecting ammonia (NH3) gas to perform first surface treatment on a sapphire substrate; a step of injecting ammonia gas and hydrogen chloride (HCl) gas to form a buffer layer on the sapphire substrate; a step of injecting ammonia gas to perform second surface treatment on the sapphire substrate; and a step of allowing gallium nitride (GaN) to grow on the sapphire substrate while lowering the flow rate ratio of ammonia gas to hydrogen chloride gas stepwise.

Abstract: Disclosed is a method of fabricating a gallium nitride substrate using nanoparticles with a core-shell structure. A method of fabricating a gallium nitride substrate using nanoparticles with a core-shell structure according to an embodiment of the present disclosure includes a step of coating nanoparticles with a core-shell structure on a temporary substrate to form at least one nanoparticle layer; a step of allowing a pit gallium nitride (pit GaN) layer to grow on the temporary substrate; a step of allowing a mirror GaN layer (mirror GaN) to grow on the pit GaN layer; and a step of separating the temporary substrate, wherein each of the nanoparticles with a core-shell structure includes a core and an ionic polymer shell coated on a surface of the core surface.