Abstract: Provided is a bidirectional semiconductor package in which the number of processes for manufacturing the bidirectional semiconductor package is reduced. According to present application, a portion between one end and the other end of the buffer wire is in contact with the lower surface of the upper DBC substrate and heat generated by the semiconductor chip is transferred to the upper DBC substrate.

Abstract: Provided is a bidirectional semiconductor package in which the number of processes for manufacturing the bidirectional semiconductor package is reduced. According to present application, a portion between one end and the other end of the buffer wire is in contact with the lower surface of the upper DBC substrate and heat generated by the semiconductor chip is transferred to the upper DBC substrate.

Abstract: Disclosed relates to a power module package and a method for manufacturing the same. The power module package includes a lower substrate on which a pattern is formed, a power semiconductor element and a ribbon which are separated apart from each other at a predetermined distance to be mounted on an upper surface of the lower substrate, a first spacer attached to an upper portion of the power semiconductor element via a first adhesive layer, a second spacer attached to an upper portion of the ribbon via a second adhesive layer, and an upper substrate attached to an upper portion of each of the first and second spacers via a third adhesive layer.

Abstract: Disclosed relates to a power module package and a method for manufacturing the same. The power module package includes a lower substrate on which a pattern is formed, a power semiconductor element and a ribbon which are separated apart from each other at a predetermined distance to be mounted on an upper surface of the lower substrate, a first spacer attached to an upper portion of the power semiconductor element via a first adhesive layer, a second spacer attached to an upper portion of the ribbon via a second adhesive layer, and an upper substrate attached to an upper portion of each of the first and second spacers via a third adhesive layer.

Abstract: Provided are a power module having an integrated power semiconductor and a method of packaging the same. The power module according to an aspect of the present invention includes a power semiconductor chip based on silicon and insulating substrates respectively disposed at both surfaces of the power semiconductor chip and including a metal pattern electrically and directly connected to the power semiconductor chip.

Abstract: The present invention relates to a power semiconductor module in which heat from the semiconductor chip is radiated not only through the buffer, but also through the lead frame to increase heat radiation efficiency, and the semiconductor chip, the buffer, and the lead frame are simultaneously bonded to increase efficiency of bonding work, and a method for manufacturing the same.

Abstract: The present invention relates to a power semiconductor module in which heat from the semiconductor chip is radiated not only through the buffer, but also through the lead frame to increase heat radiation efficiency, and the semiconductor chip, the buffer, and the lead frame are simultaneously bonded to increase efficiency of bonding work, and a method for manufacturing the same.

Abstract: Provided are a power module having an integrated power semiconductor and a method of packaging the same. The power module according to an aspect of the present invention includes a power semiconductor chip based on silicon and insulating substrates respectively disposed at both surfaces of the power semiconductor chip and including a metal pattern electrically and directly connected to the power semiconductor chip.

Abstract: An electrode for a plasma display panel (PDP) in which an electrode having a high adhesive power is formed on a glass substrate of a color plasma display panel and a method for forming the same. The electrode for the PDP includes a metal ceramic thin film formed between a metal electrode and a dielectric substrate. The method includes steps of forming a metal ceramic thin film on a predetermined portion of the dielectric substrate and forming an electrode having the same metal element as the metal ceramic thin film on the metal ceramic thin film.

Abstract: An electrode for a plasma display panel (PDP) in which an electrode having a high adhesive power is formed on a glass substrate of a color plasma display panel and a method for forming the same. The electrode for the PDP includes a metal ceramic thin film formed between a metal electrode and a dielectric substrate. The method includes steps of forming a metal ceramic thin film on a predetermined portion of the dielectric substrate and forming an electrode having the same metal element as the metal ceramic thin film on the metal ceramic thin film.