Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.

Abstract: Disclosed are a SiC MOSFET power semiconductor device and a method of manufacturing the same. More particularly, a SiC MOSFET power semiconductor device and a method of manufacturing the same are disclosed, including a trench gate having a hexagonal shape in a plan or layout view, to improve on-resistance (Rsp) characteristics and increase channel density.

Abstract: Disclosed are a semiconductor device (1) including a MOSPET region and an integrated diode region, and a manufacturing method thereof. More particularly, a semiconductor device (1) including a silicon carbide (SiC) MOSPET region and an integrated Schottky bather diode that reduce forward voltage drop (Vf), device area, and switching oscillation resulting from parasitic inductance are disclosed.

Abstract: A semiconductor package including a die paddle, a first lead spaced apart from the die paddle and on one side of the die paddle, a second lead spaced apart from the die paddle and on another side of the die paddle, a spacer on the die paddle, a semiconductor die on the spacer, a first wire configured to connect an upper surface of the semiconductor die to the first lead, and a mold film configured to cover the die paddle, the first lead, the second lead, the spacer, the semiconductor die, and the first wire, wherein a first width of the spacer is greater than a second width of the die paddle so that the spacer overlaps the first lead may be provided.

Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.

Abstract: Disclosed are various methods for transmitting or receiving data or control information having high reliability conditions. A method for operating a terminal which transmits uplink control information (UCI) includes: a step of generating UCI; a step of comparing the priority of an uplink (UL) control channel for the transmission of the UCI with the priority of a UL data channel when some symbols of the UL control channel and the UL data channel overlap; and a step of selecting the UL channel having a higher priority among the UL control channel and the UL data channel, and transmitting the UCI to a base station through the selected UL channel.

Abstract: Provided are an environmental gas sensor and a method of manufacturing the same. The environmental gas sensor includes an insulating substrate, metal electrodes formed on the insulating substrate, and a sensing layer in which different kinds of nanofibers are arranged perpendicular to each other on the metal electrodes. Thus, the environmental gas sensor can simultaneously sense two kinds of gases.

Abstract: Provided are an environmental gas sensor and a method of manufacturing the same. The environmental gas sensor includes an insulating substrate, metal electrodes formed on the insulating substrate, and a sensing layer in which different kinds of nanofibers are arranged perpendicular to each other on the metal electrodes. Thus, the environmental gas sensor can simultaneously sense two kinds of gases.

Abstract: An ultra-sensitive gas sensor using semiconductor oxide nanofibers and a method of fabricating the same are provided. The gas sensor includes an insulating substrate, a metal electrode formed on the insulating substrate, and a semiconductor metal oxide nanofibers layer formed on the metal electrode and having nanoparticles of high sensitivity coated thereon. The method of fabricating a semiconductor oxide nanofibers gas sensor includes fabricating an oxide using a solution for electrospinning, electrospinning the solution, performing an annealing process to form an oxide semiconductor nanofiber, and partially coating a nano-sized metal oxide or metal catalyst particle having high sensitivity to a specific gas on a surface of the nanofiber having a large specific surface area. As a result, a semiconductor oxide nanofibers gas sensor having ultra sensitivity, high selectivity, fast response and long-term stability can be fabricated.

Abstract: Provided are a method of fabricating a multilayered thin film transistor using a plastic substrate and an active matrix display device including the thin film transistor fabricated by the method. The method includes: preparing a substrate formed of plastic; forming a buffer insulating layer on the plastic substrate; forming a silicon layer on the buffer insulating layer; patterning the silicon layer to form an active layer; forming a gate insulating layer on the active layer; stacking a plurality of gate metal layers on the gate insulating layer; patterning the plurality of gate metal layers; and etching a corner region of the lowest gate metal layer formed on the gate insulating layer of the patterned gate metal layers. Accordingly, a gate metal is formed which includes a multilayered gate metal layer and has an etched corner region, thereby reducing an electric field of the corner to reduce a leakage current of the TFT.

Abstract: A nano-crystalline composite-oxide thin film for an environmental gas sensor, an environmental gas sensor using the thin film, and a method of manufacturing the environmental gas sensor are provided. The nano-crystalline composite-oxide thin film is formed of hetero-oxide nano-crystalline particles having independent crystalline phases from each other, and the environmental gas sensor including the thin film has excellent characteristics including high sensitivity, high selectivity, high stability and low power consumption.

Abstract: Provided are a method of fabricating a multilayered thin film transistor using a plastic substrate and an active matrix display device including the thin film transistor fabricated by the method. The method includes: preparing a substrate formed of plastic; forming a buffer insulating layer on the plastic substrate; forming a silicon layer on the buffer insulating layer; patterning the silicon layer to form an active layer; forming a gate insulating layer on the active layer; stacking a plurality of gate metal layers on the gate insulating layer; patterning the plurality of gate metal layers; and etching a corner region of the lowest gate metal layer formed on the gate insulating layer of the patterned gate metal layers. Accordingly, a gate metal is formed which includes a multilayered gate metal layer and has an etched corner region, thereby reducing an electric field of the corner to reduce a leakage current of the TFT.