Abstract: A chamber of a hybrid chemical and physical vapor deposition (HybCPVD) provides high-quality and uniform films on relatively large multiple wafers per growth run at reasonably high deposition rates using a scalable high-throughput process. Transition-metal-alloyed III-N single-crystalline and textured thin films are epitaxially and non-epitaxially deposited on a suitable substrate (of, for example, silicon or a metal such as aluminum or titanium) by providing a mixture of various gases in a deposition/growth chamber. The precursors for the chemical reactions include vapor phase of elements of transition metals, vapor phase of chlorides, and vapor phase of hydride. This growth technique provides high growth rate and high-quality epitaxial materials.

Abstract: Externally-strained devices such as LED and FET structures as discussed herein may have strain applied before or during their being coupled to a housing or packaging substrate. The packaging substrate may also be strained prior to receiving the structure. The strain on the devices enables modulation of light intensity, color, and electrical currents in some embodiments, and in alternate embodiments, enables a fixed strain to be induced and maintained in the structures.

Abstract: Externally-strained devices such as LED and FET structures as discussed herein may have strain applied before or during their being coupled to a housing or packaging substrate. The packaging substrate may also be strained prior to receiving the structure. The strain on the devices enables modulation of light intensity, color, and electrical currents in some embodiments, and in alternate embodiments, enables a fixed strain to be induced and maintained in the structures.

Abstract: Systems and methods herein relate to the fabrication of a single-crystal flexible semiconductor template that may be attached to a semiconductor device. The template fabricated comprises a plurality of single crystals grown by lateral epitaxial growth on a seed layer and bonded to a flexible substrate. The layer grown has portions removed to create windows that add to the flexibility of the template.

Abstract: Discussed herein are systems and methods for fabrication of flexible electronic structures via direct growth of two-dimensional materials on metal foil and the direct growth of 2D materials on any substrate including polycrystalline, single crystal, and amorphous substrates, that may employ an adhesion layer of, for example, a Cu or Ni film, formed directly on the substrate prior to formation of subsequent layers.

Abstract: Externally-strained devices such as LED and FET structures as discussed herein may have strain applied before or during their being coupled to a housing or packaging substrate. The packaging substrate may also be strained prior to receiving the structure. The strain on the devices enables modulation of light intensity, color, and electrical currents in some embodiments, and in alternate embodiments, enables a fixed strain to be induced and maintained in the structures.

Abstract: Externally-strained devices such as LED and FET structures as discussed herein may have strain applied before or during their being coupled to a housing or packaging substrate. The packaging substrate may also be strained prior to receiving the structure. The strain on the devices enables modulation of light intensity, color, and electrical currents in some embodiments, and in alternate embodiments, enables a fixed strain to be induced and maintained in the structures.

Abstract: Systems and methods herein relate to the fabrication of a single-crystal flexible semiconductor template that may be attached to a semiconductor device. The template fabricated comprises a plurality of single crystals grown by lateral epitaxial growth on a seed layer and bonded to a flexible substrate. The layer grown has portions removed to create windows that add to the flexibility of the template.

Abstract: Systems and methods herein relate to the fabrication of a single-crystal flexible semiconductor template that may be attached to a semiconductor device. The template fabricated comprises a plurality of single crystals grown by lateral epitaxial growth on a seed layer and bonded to a flexible substrate. The layer grown has portions removed to create windows that add to the flexibility of the template.

Abstract: Systems and methods herein relate to the fabrication of a single-crystal flexible semiconductor template that may be attached to a semiconductor device. The template fabricated comprises a plurality of single crystals grown by lateral epitaxial growth on a seed layer and bonded to a flexible substrate. The layer grown has portions removed to create windows that add to the flexibility of the template.

Abstract: A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an active region may be grown. A pattern may be placed on or near the active region. A dielectric material may be deposited on the pattern and the pattern may be removed resulting in a gain guide. Then a top mirror may be grown on the gain guide. This structure with the dielectric gain guide may have specific characteristics and/or additional features.

Abstract: An edge viewing semiconductor photodetector may be provided. Light may be transmitted through an optical fiber conduit comprising a core region surrounded by a cladding region. The light may be received at the edge viewing semiconductor photodetector having an active area. The active area may be substantially contained within a first plane. The edge viewing semiconductor photodetector may further have conducting contact pads connected to the active area. The contact pads may be substantially contained within plural planes. The first plane may have its normal direction substantially inclined with respect to a normal direction of the plural planes. The first plane may further have its normal direction substantially inclined with respect to a direction of the received light incident to the active area. Next, a signal may be received from the pads. The signal may correspond to the transmitted light.

Abstract: A long wavelength vertical cavity surface emitting laser having a substrate, a first mirror situated on the substrate, an active region situated on the first mirror, a second mirror situated on the active region. The first mirror may have several pairs of layers with an oxidized layer in one or more pairs of that mirror. The substrate may include InP and the mirror components may be compatible with the InP. The one or more layers in the first mirror may be oxidized via a trench-like approach or other arrangement.

Abstract: A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an active region may be grown. A pattern may be placed on or near the active region. A dielectric material may be deposited on the pattern and the pattern may be removed resulting in a gain guide. Then a top mirror may be grown on the gain guide. This structure with the dielectric gain guide may have specific characteristics and/or additional features.

Abstract: A vertical cavity surface emitting laser (VCSEL) structure includes a bottom distributed Bragg reflector (DBR) arranged over a substrate; a metal layer interposed between the bottom DBR and the substrate, wherein the metal layer and bottom DBR form a composite mirror structure. A patterned dielectric layer may be interposed between the metal layer and the bottom DBR to reduce a deleterious chemical reaction between the metal layer and the bottom DBR. The metal layer directly contacts a portion of the bottom DBR to enhance the electrical and thermal conductivity of the VCSEL structure.

Abstract: A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an active region may be grown. A pattern may be placed on or near the active region. A dielectric material may be deposited on the pattern and the pattern may be removed resulting in a gain guide. Then a top mirror may be grown on the gain guide. This structure with the dielectric gain guide may have specific characteristics and/or additional features.

Abstract: A vertical cavity surface emitting laser (VCSEL) includes an indium-based semiconductor alloy substrate, a first mirror stack over the substrate, an active region having a plurality of quantum wells over the first mirror stack, a tunnel junction over the active region, the tunnel junction including a p-doped pseudomorphically strained layer of a compound selected from the group consisting of Al-rich InAlAs, AlAs, Ga-rich InGaAs, GaAs and combinations thereof, and a second mirror stack over the tunnel junction. The pseudomorphically strained layer can be used to form a tunnel junction with a n-doped layer of InP or AlInAs, or with a lower bandgap material such as AlInGaAs or InGaAsP. Such tunnel junctions are especially useful for a long wavelength VCSEL.

Abstract: An edge viewing semiconductor photodetector may be provided. Light may be transmitted through an optical fiber conduit comprising a core region surrounded by a cladding region. The light may be received at the edge viewing semiconductor photodetector having an active area. The active area may be substantially contained within a first plane. The edge viewing semiconductor photodetector may further have conducting contact pads connected to the active area. The contact pads may be substantially contained within plural planes. The first plane may have its normal direction substantially inclined with respect to a normal direction of the plural planes. The first plane may further have its normal direction substantially inclined with respect to a direction of the received light incident to the active area. Next, a signal may be received from the pads. The signal may correspond to the transmitted light.

Abstract: A VCSEL structure having thermal management. The structure may be designed for conveyance of heat from the active layer primarily through one of the mirrors to a material that removes heat externally away from the structure. Thermal management may involve various configurations of heat removal for various VCSEL structures. The structures may be designed to effect such respective configurations for heat removal.

Abstract: A vertical cavity surface emitting laser having an oxidizable layer oxidized with enhanced lateral oxidation. The oxidation may involve adding oxygen in the form of a fluid, with or without other fluid such as water vapor, in the oxidizing environment, and/or in the layer to be oxidized. This oxidation approach may be used for layers with relatively low aluminum content such as in InP based structures, or with high aluminum content such as in GaAs based structures.