Abstract: There is provided an oxynitride-based phosphor comprising a ?-type Si3N4 crystal structure and represented by a compositional formula of Si6?xAlxOxN8?x:Euy (0<x?0.3, 0.001?y?0.03), the oxynitride-based phosphor having a form of a secondary particle comprising a plurality of primary particles bonded to each other, the plurality of primary particles having pillar shapes.

Abstract: There is provided an oxynitride-based phosphor comprising a ?-type Si3N4 crystal structure and represented by a compositional formula of Si6-xAlxOxN8-x:Euy (0<x?0.3, 0.001?y?0.03), the oxynitride-based phosphor having a form of a secondary particle comprising a plurality of primary particles bonded to each other, the plurality of primary particles having pillar shapes.

Abstract: A fuse structure of a semiconductor device includes a fuse pattern having a contact portions at opposite ends of the fuse pattern, wherein the fuse pattern includes a first conductive layer and a second conductive layer stacked sequentially, and a first electrode and a second electrode connected to the contact portions respectively. The fuse pattern is configured to be electrically shorted during a fuse program operation. A bottleneck portion can be formed at the center of the fuse pattern spaced apart from pad portions formed at opposite ends of the fuse pattern to which an electrode is connected, enabling breakage of the fuse pattern to be spaced apart from a contact portion of the electrode. As a result, a profile of a portion broken after a fuse program operation is improved and leakage current caused by a poor profile is suppressed.