Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.

Abstract: A lens assembly includes a first D-cut lens and a lens barrel surrounding a portion of a side surface of the first D-cut lens. The side surface of the first D-cut lens includes a linear portion, and the lens barrel is configured to expose at least a portion of the linear portion of the first D-cut lens in a direction perpendicular to an optical axis.

Abstract: The present invention relates to a method of non-destructively measuring a thickness of a reinforcement membrane, and more particularly, to a method of non-destructively measuring a thickness of a hydrogen ion exchange reinforcement membrane for a fuel cell, in which the reinforcement membrane has a symmetric three-layer structure including a reinforcement base layer and pure water layers disposed at opposing sides of the reinforcement base layer, including performing total non-destructive inspection and omitting a process of analyzing a position by means of a thickness peak of a power spectrum of the respective layers of the reinforcement membrane.

Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.

Abstract: A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.

Abstract: A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.

Abstract: There is provided, a semiconductor manufacturing apparatus which reduces loss of a process gas or a precursor transferred from a nozzle to a wafer by improving the injection efficiency of the process gas or the precursor from the nozzle to the substrate. The semiconductor manufacturing apparatus includes a boat on which a substrate is loaded in a first direction, an inner tube which covers the boat, a nozzle which extends in the first direction and through which a process gas to be provided to the substrate moves, a nozzle tube which surrounds the nozzle and comprises a gas injection hole for injecting the process gas toward the substrate, and a nozzle protrusion which is connected to the gas injection hole and extends in a second direction, wherein a shortest distance from an end of the nozzle protrusion to the substrate is greater than 0 mm and less than 9 mm.

Abstract: Example embodiments relate to a stacking structure having a material layer formed on a graphene layer, and a method of forming the material layer on the graphene layer. In the stacking structure, when the material layer is formed on the graphene layer by using an ALD method, an intermediate layer as a seed layer may be formed on the graphene layer by using a linear type precursor.

Abstract: A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.

Abstract: A plurality of gate electrodes is stacked on an upper surface of a substrate in a direction perpendicular to an upper surface of the substrate. A channel region penetrates through the plurality of gate electrodes to extend perpendicularly to the upper surface of the substrate. A gate dielectric layer includes a tunneling layer, a charge storage layer and a blocking layer that are sequentially disposed between the channel region and the plurality of gate electrodes. The charge storage layer includes a plurality of doping elements and a plurality of deep level traps generated by the plurality of doping element. A concentration distribution of the plurality of doping elements in a thickness direction of the charge storage layer is non-uniform.

Abstract: A plurality of gate electrodes is stacked on an upper surface of a substrate in a direction perpendicular to an upper surface of the substrate. A channel region penetrates through the plurality of gate electrodes to extend perpendicularly to the upper surface of the substrate. A gate dielectric layer includes a tunneling layer, a charge storage layer and a blocking layer that are sequentially disposed between the channel region and the plurality of gate electrodes. The charge storage layer includes a plurality of doping elements and a plurality of deep level traps generated by the plurality of doping element. A concentration distribution of the plurality of doping elements in a thickness direction of the charge storage layer is non-uniform.

Abstract: Example embodiments relate to a stacking structure having a material layer formed on a graphene layer, and a method of forming the material layer on the graphene layer. In the stacking structure, when the material layer is formed on the graphene layer by using an ALD method, an intermediate layer as a seed layer may be formed on the graphene layer by using a linear type precursor.

Abstract: In an embodiment, heat treatment equipment comprises a process tube, an exhaust duct connected to the process tube, and, during operation, exhausting gases present within the process tube. The heat treatment equipment also comprises a hollow pressure control member interposed between the process tube and the exhaust duct, the pressure control member being operatively connected to the process tube and the exhaust duct respectively, and including one or a number of openings. Negative pressure is avoided in the process tube during heat treatment processes so that unwanted gas and impurities cannot enter the process tube from outside.

Abstract: An air-conditioning system of a substrate processing apparatus includes an air inlet line for providing air to a clean room. A contamination control apparatus for removing contaminants in the air is connected to the air inlet line. A controller controls temperature and humidity of the air without the contaminants. An air outlet line provides the air having the controlled temperature and humidity to a substrate processing chamber that is disposed in the clean room. The contamination control apparatus includes a spray unit having at least one nozzle that sprays water. At least one eliminator that traps the water for capturing contaminants in the air and drops the trapped water into a tank. A water circulation unit provides the water that includes an additive for controlling pH of the water to the spray unit.

Abstract: In an embodiment, heat treatment equipment comprises a process tube, an exhaust duct connected to the process tube, and, during operation, exhausting gases present within the process tube. The heat treatment equipment also comprises a hollow pressure control member interposed between the process tube and the exhaust duct, the pressure control member being operatively connected to the process tube and the exhaust duct respectively, and including one or a number of openings. Negative pressure is avoided in the process tube during heat treatment processes so that unwanted gas and impurities cannot enter the process tube from outside.

Abstract: Grating forming the floor of a clean room minimizes turbulence and enhances the rate at which air is discharged therethrough. The grate includes a base plate having a plurality of through-holes. Each of the through-holes includes a receiving portion through which the air is received and an exhausting portion through which the air is exhausted. The cross-sectional area of the receiving decreases toward the exhausting portion, and the cross-sectional area of the exhausting portion decreases toward the receiving portion.

Abstract: The present invention relates to a reticule storage device. After the reticule storage device influxes external airs using a motor and a fan, it provides the external airs filtered by a filter to a reticule storage shelf in a chamber. According to the present invention, a nitrogen gas supply pipe is installed on one end of the chamber. In addition, the nitrogen gas supplier is installed to be connected from the nitrogen gas supplier to the reticule storage shelf. Several nitrogen gas supply nozzles are installed on an end portion of the nitrogen gas supply pipe, so that nitrogen gas is supplied to maintain a regular pressure in the chamber when a motor inflowing external airs is stopped. As a result, in case that an apparatus is stopped due to a problem of the apparatus for many hours, or an external voltage is not supplied due to a problem of the external problem, nitrogen gases may be purged in the apparatus.

Abstract: An air-conditioning system of a substrate processing apparatus includes an air inlet line for providing air to a clean room. A contamination control apparatus for removing contaminants in the air is connected to the air inlet line. A controller controls temperature and humidity of the air without the contaminants. An air outlet line provides the air having the controlled temperature and humidity to a substrate processing chamber that is disposed in the clean room. The contamination control apparatus includes a spray unit having at least one nozzle that sprays water. At least one eliminator that traps the water for capturing contaminants in the air and drops the trapped water into a tank. A water circulation unit provides the water that includes an additive for controlling pH of the water to the spray unit.