Abstract: A display apparatus may include a semiconductor stack including: a first conductivity-type semiconductor base layer; and light-emitting diode (LED) cells on a lower surface of the first conductivity-type semiconductor base layer. The display apparatus may further include a spacer on a side surface and a lower surface of the LED cells, the spacer including an inclined outer sidewall; an reflective electrode on the spacer and connected to a region of the first conductivity-type semiconductor base layer between the LED cells; a gap-fill insulating layer on a lower surface of the semiconductor stack and on the at least one reflective electrode; a connection electrode connected to the second conductivity-type semiconductor layer through a contact hole penetrating the gap-fill insulating layer, the reflective electrode, and the spacer; and an insulating liner disposed along an inner sidewall of the contact hole, and electrically insulating the connection electrode and the reflective electrode.

Abstract: A display apparatus includes a pixel array. The pixel array may include a plurality of light emitting diode (LED) cells respectively including a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, and a transparent electrode that includes a first lower surface and a second lower surface being offset from the first lower surface to form a step. The pixel array may further include a cover electrode on the first lower surface of the transparent electrode of the plurality of LED cells, a capping layer covering a lower surface of the cover electrode and the second lower surface of the transparent electrode, a reflective electrode extending at least on a side surface of the plurality of LED cells, and connection electrodes connected to the cover electrode on the plurality of LED cells through a contact hole of the capping layer.

Abstract: Provided is a light emitting device including a semiconductor light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially stacked in a vertical direction, and an electrode layer on the second conductivity type semiconductor layer and spaced apart from the active layer in the vertical direction, wherein the electrode layer includes a transparent electrode layer in contact with the second conductivity type semiconductor layer, and a lower reflective electrode layer in contact with the transparent electrode layer and spaced apart from the second conductivity type semiconductor layer in the vertical direction, and wherein a minimum width of the lower reflective electrode layer in a horizontal direction is greater than a width of the transparent electrode layer in the horizontal direction.

Abstract: A display apparatus includes a pixel array which includes a plurality of pixel units, a semiconductor stack, a spacer, a reflective electrode, and a plurality of connection electrodes. The semiconductor stack includes a plurality of light-emitting diode (LED) cells on a first conductivity-type semiconductor base layer, and a second conductivity-type semiconductor layer stacked on the first conductivity-type semiconductor base layer. The spacer at least partially covers a side surface and a lower surface of each of the plurality of LED cells and has an inclined sidewall. A reflective electrode is on the inclined sidewall of the spacer and electrically coupled with the first conductivity-type semiconductor base layer between the plurality of LED cells. The plurality of connection electrodes is electrically coupled with the second conductivity-type semiconductor layer on the lower surface of each of the plurality of LED cells through a contact hole.

Abstract: The present invention relates to a semiconductor light-emitting device having a two-stage photonic crystal pattern formed thereon, and to a method for manufacturing same. According to the present invention, a second photonic crystal pattern is formed inside a first photonic crystal pattern formed on a semiconductor layer or transparent electrode layer, in order to improve light extraction efficiency. Also, according to the present invention, in order to form a second fine nanoscale photonic crystal pattern in the first photonic crystal pattern, a nanosphere lithography process employing polymer beads is used, and a trapping layer made of a thermoplastic resin was used to conveniently form polymer beads in a single layer so as to eliminate the inconvenience of having to calculate and change process variables according to polymer bead sizes in traditional nanosphere lithography processes.

Abstract: The present invention relates to a semiconductor light-emitting device having a two-stage photonic crystal pattern formed thereon, and to a method for manufacturing same. According to the present invention, a second photonic crystal pattern is formed inside a first photonic crystal pattern formed on a semiconductor layer or transparent electrode layer, in order to improve light extraction efficiency. Also, according to the present invention, in order to form a second fine nanoscale photonic crystal pattern in the first photonic crystal pattern, a nanosphere lithography process employing polymer beads is used, and a trapping layer made of a thermoplastic resin was used to conveniently form polymer beads in a single layer so as to eliminate the inconvenience of having to calculate and change process variables according to polymer bead sizes in traditional nanosphere lithography processes.

Abstract: The present invention relates to a semiconductor light-emitting device having a two-stage photonic crystal pattern formed thereon, and to a method for manufacturing same. According to the present invention, a second photonic crystal pattern is formed inside a first photonic crystal pattern formed on a semiconductor layer or transparent electrode layer, in order to improve light extraction efficiency. Also, according to the present invention, in order to form a second fine nanoscale photonic crystal pattern in the first photonic crystal pattern, a nanosphere lithography process employing polymer beads is used, and a trapping layer made of a thermoplastic resin was used to conveniently form polymer beads in a single layer so as to eliminate the inconvenience of having to calculate and change process variables according to polymer bead sizes in traditional nanosphere lithography processes.