Abstract: Apparatuses for cleaning wafers used in integrated circuit devices comprise: (1) a dry cleaning section comprising inert gas storage bath, a hydrogen fluoride gas storage bath, and a vapor storage bath containing a component selected from the group consisting of water vapor, alcohol vapor, and mixtures thereof and a gas mixer, wherein the inert gas storage bath, the hydrogen fluoride gas storage bath, and the vapor storage bath are in communication with the gas mixer; (2) a wet cleaning section comprising a first bath for storing a fluoride; a second bath for storing a liquid alcohol; and a cleaning solution storage bath in communication with the first bath and second bath, wherein the fluoride and the liquid alcohol form a cleaning solution which is stored in the cleaning solution storage bath; and (3) a common cleaning bath positioned between and in communication with the dry cleaning section and the wet cleaning section.

Abstract: A pre-treatment method for improving the growth of hemi-spherical grains (HSGs) on a semiconductor structure by removing etching residue before forming a capacitor storage node having the HSGs. The pre-treatment method includes dry-etching a material layer formed on a surface of a semiconductor substrate to form a storage node pattern on the semiconductor substrate. Multiple ashing sequences are then performed on the semiconductor structure using an etching gas, followed by a stripping step using H2SO4 to remove any residue remaining on the semiconductor structure after the multiple ashing sequences. The semiconductor structure is then cleaned with an ammonium peroxide mixture (APM), and HSGs are thereafter grown on capacitor storage nodes of the storage node pattern.

Abstract: Disclosed is a method of forming storage cell capacitors for use in dynamic random access memories, which comprises, after sequentially depositing a reaction barrier layer and a platinum layer on top of a contact plug which formed on a semiconductor substrate having a node, wet etching the reaction barrier layer to form lateral recesses underneath edges of the platinum layer, and forming sidewall spacer in the lateral recesses and underneath the platinum layer. Also, according to an another embodiment of the invention, a method comprise two important features, one is to surround sidewalls of a reaction barrier layer with an oxide layer, and the other is to form a platinum layer, serving as a storage node electrode of a capacitor, having an inclined plane of more than 80 degrees. The upper portion of the platinum layer has a steeply-sloped pattern of more than 80.degree.

Abstract: Apparatuses for cleaning wafers used in integrated circuit devices comprise: (1) a dry cleaning section comprising inert gas storage bath, a hydrogen fluoride gas storage bath, and a vapor storage bath containing a component selected from the group consisting of water vapor, alcohol vapor, and mixtures thereof and a gas mixer, wherein the inert gas storage bath, the hydrogen fluoride gas storage bath, and the vapor storage bath are in communication with the gas mixer; (2) a wet cleaning section comprising a first bath for storing a fluoride; a second bath for storing a liquid alcohol; and a cleaning solution storage bath in communication with the first bath and second bath, wherein the fluoride and the liquid alcohol form a cleaning solution which is stored in the cleaning solution storage bath; and (3) a common cleaning bath positioned between and in communication with the dry cleaning section and the wet cleaning section.

Abstract: Cleaning solutions for removing contaminants from integrated circuit substrates comprise fluoroboric acid and phosphoric acid. Methods of removing contaminants from integrated circuit substrates comprise contacting the substrates with cleaning solutions comprising fluoroboric acid and phosphoric acid. The integrated circuit substrates are then contacted with aqueous solutions.

Abstract: A solution and method for cleaning a silicon wafer following a chemical-mechanical polishing process is disclosed. The cleaning solution being 0.1% to 99% by total solution volume of phosphoric acid, 0.1% to 25% by total solution volume of fluoroboric acid, and the balance of the solution, deionized water.