Patents by Inventor Jae Jun Bae

Jae Jun Bae has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7709375
    Abstract: A method of fabricating a semiconductor device includes forming a barrier film over a semiconductor substrate and over a gate disposed on the substrate; forming a metal layer over the barrier film; selectively etching the metal layer and the barrier film to form a contact pattern between the gates; forming a spacer over a sidewall of the contact pattern; forming an interlayer insulating film over the contact pattern and the gate; and polishing the interlayer insulating film to expose the contact pattern.
    Type: Grant
    Filed: December 31, 2007
    Date of Patent: May 4, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventor: Jae Jun Bae
  • Publication number: 20080227290
    Abstract: A method of fabricating a semiconductor device includes forming a barrier film over a semiconductor substrate and over a gate disposed on the substrate; forming a metal layer over the barrier film; selectively etching the metal layer and the barrier film to form a contact pattern between the gates; forming a spacer over a sidewall of the contact pattern; forming an interlayer insulating film over the contact pattern and the gate; and polishing the interlayer insulating film to expose the contact pattern.
    Type: Application
    Filed: December 31, 2007
    Publication date: September 18, 2008
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventor: Jae Jun Bae