Abstract: A manufacturing apparatus and a manufacturing method are provided. A manufacturing apparatus includes a chamber, and a stage disposed in the chamber. The stage includes an upper surface on which a target substrate is disposed, a lower surface opposite to the upper surface, a first side surface extending between the upper surface and the lower surface in a first direction, and a second side surface extending between the upper surface and the lower surface in a second direction perpendicular to the first direction. The first side surface is in a round shape, and at least a portion of the first side surface is convex toward an outside of the stage.

Abstract: Provided herein may be a memory system and a method of operating the same. The memory system may include a memory device including super blocks, each of the super blocks including a plurality of memory blocks, and a controller configured to control the memory device so that a program operation is performed on a selected memory block within any one of the super blocks based on a request from a host, wherein, when a program fail occurs during the program operation that is performed on the selected memory block of the selected super block, the controller is configured to control the memory device so that a test read operation is performed on remaining memory blocks, besides the selected memory block, of the selected super block.

Abstract: A joining material for laser welding, a laser welding method using the same, and a laser joined body using the laser welding method. The joining material includes a polymer matrix and a needle-shaped inorganic filler. The polymer matrix includes a polypropylene resin having a melt index of 80 g/10 min or more to 95 g/10 min or less as measured at a temperature of 230° C. and a load of 2.16 kg, and the needle-shaped organic filler has an aspect ratio of 10:1 to 20:1.

Abstract: Systems and methods for monitoring and controlling activities of Drosophila organisms are provided. In one aspect, a method includes acquiring, using a first activity detector, imaging data tracking movements of the Drosophila organisms, and acquiring, using a second activity detector, bioluminescence data corresponding to a neural activity of the Drosophila organisms. The method also includes correlating, using the acquired data, a behavioral activity and neural activity of the Drosophila organisms, and determining, using the correlation, an activity profile for the Drosophila organisms. The method further includes providing, based on the activity profile, a stimulation to the Drosophila organisms to control at least one of the behavior activity or the neural activity over a time period extendible to a nominal life cycle of the Drosophila organisms.

Abstract: The present disclosure relates to a composition for inducing differentiation into beige adipocytes, which contains an exosome derived from stem cells differentiating into beige adipocytes as an active ingredient, a pharmaceutical composition, a health functional food and a differentiation medium composition containing the composition and a method for inducing differentiation into beige adipocytes using the same.

Abstract: Disclosed is a charging apparatus including a first power source connector connectable to a charging station power source, a second power source connector connectable to a commercial power source, a cable connected to the first power source connector and the second power source connector, and a. controller including a power source terminal connected to the first power source connector or the second power source connector via the cable and controlling the intensity of a charging supply current when the first power source connector or the second power source connector is connected to the power source terminal.

Abstract: A display device may include an insulation layer, a wire directly contacting the insulation layer, a first electrode overlapping the insulation layer, an organic light emitting layer positioned on the first electrode, and a second electrode positioned on the organic light emitting layer. The wire may include an aluminum alloy that includes at least one of copper, vanadium, and silicon. The first electrode may include silver.

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

Abstract: A semiconductor device, and a method of manufacturing the semiconductor device, the method includes forming a first stack structure penetrated by first channel structures, forming electrode patterns surrounding second channel structures and separated from each other by first slits and second slits, the second channel structures coupled to the first channel structures, and the second slits comprising a different width from the first slits, filling each of the first slits and the second slits with an insulating material to cover sidewalk of the electrode patterns, and forming third slits passing through the insulating material in each of the second slits and extending to pass through the first stack structure.

Abstract: A semiconductor memory device including first-first conductive lines on a substrate; second-first conductive lines on the first-first conductive lines; first contacts connected to the first-first conductive lines; and second contacts connected to the second-first conductive lines, wherein the first-first conductive lines protrude in a first direction beyond the second-first conductive lines; the first-first conductive lines include first regions having a first thickness, second regions having a second thickness, the second thickness being greater than the first thickness, and third regions having a third thickness, the third thickness being smaller than the first thickness and smaller than the second thickness, and the second regions of the first-first conductive lines are between the first regions of the first-first conductive lines and the third regions of the first-first conductive lines.

Abstract: A piston pump includes: a sleeve housing which is provided with a discharge hole and defines a bore; a piston which has an inlet flow passage for drawing oil into the bore and is reciprocally movably inserted into the bore; an inlet valve which is configured to open/close the inlet flow passage; an outlet valve cover which is coupled to the sleeve housing to surround a portion at which the discharge hole is formed; an outlet valve which is configured to open/close the discharge hole; and a sealing member which is interposed between the sleeve housing and the piston to provide a sealing therebetween. The sealing member is provided with a separation prevention protrusion against which the piston is blocked to prevent a separation of the piston.

Abstract: A dynamic vision sensor includes a pixel unit, including a plurality of pixels outputting an activation signal in response to dynamic input, a first reading unit outputting a first signal, based on the activation signal, a second reading unit outputting a second signal, based on the activation signal, an event counter counting the number of events generated, based on the activation signal, and generating and outputting a selection signal, based on the number of events, and a selecting unit outputting one of the first signal and the second signal, based on the selection signal.

Abstract: A lithium secondary battery including a positive electrode, a negative electrode, a separator interposed between the positive electrode and the negative electrode, and a sulfur dioxide-based inorganic electrolyte solution. The negative electrode includes a negative electrode active material which includes a carbon material having a coating comprising titanium oxide (TiOx, 0<x<2). The titanium oxide improves the wettability of the carbon material negative electrode to the inorganic electrolyte solution and the charge transfer reaction on the surface and minimizes the interfacial resistance of the carbon material/inorganic electrolyte solution, thereby improving the high-rate charge/discharge characteristics.

Abstract: A semiconductor device, and a method of manufacturing the semiconductor device, the method includes forming a first stack structure penetrated by first channel structures, forming electrode patterns surrounding second channel structures and separated from each other by first slits and second slits, the second channel structures coupled to the first channel structures, and the second slits comprising a different width from the first slits, filling each of the first slits and the second slits with an insulating material to cover sidewalls of the electrode patterns, and forming third slits passing through the insulating material in each of the second slits and extending to pass through the first stack structure.

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

Abstract: A method for preparing a film carrier for sputtering of IC units placed thereon, the method comprising the steps of: providing a carrier of IC units; removing said units from the carrier; delivering said IC units to a flipper; inverting and delivering said units to a sputtering film frame; placing the units on said sputtering film frame in an array having a pre-determined clearance about adjacent units.

Abstract: A semiconductor device may include a substrate, a first nanowire, a second nanowire, a first gate insulating layer, a second gate insulating layer, a first metal layer and a second metal layer. The first gate insulating layer may be along a periphery of the first nanowire. The second gate insulating layer may be along a periphery of the second nanowire. The first metal layer may be on a top surface of the first gate insulating layer along the periphery of the first nanowire. The first metal layer may have a first crystal grain size. The second metal layer may be on a top surface of the second gate insulating layer along the periphery of the second nanowire. The second metal layer may have a second crystal grain size different from the first crystal grain size.

Abstract: A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.

Abstract: An event detecting device may include an event signal generator configured to output a plurality of event signals, each including a first data and a second data having mutually complementary attributes and respective address data indicating positions of pixels having output the first data and the second data, a data manager configured to store one of the first data and the second data of a first one of the plurality of event signals and the respective address data in a buffer as first sub data when only one of the first data and the second data of the first one of the plurality of event signals includes the event information, and an output signal generator configured to generate an output signal using the first sub data and a second sub data when the second sub data, different from the first sub data, is stored in the buffer.

Abstract: A battery module includes a cell stack including stacked pouch-type secondary battery cells, which have electrode leads in opposite directions; a bus bar frame having first and second vertical plates and an upper plate connected to the first and second vertical plates to be hinged to at least one of the first and second vertical plates; and a mono-frame having a rectangular tube shape with an inner space in which the cell stack mounted to the bus bar frame is disposed. A plurality of bus bars are provided at outer surfaces of the first and second vertical plates, and the electrode leads of the cells are electrically connected to the corresponding bus bars through slots formed in the first and second vertical plates. A sensing member electrically connected to the bus bars of the vertical plates to sense electrical characteristics of the cells is disposed at the upper plate.