Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

Abstract: This light emitting device comprises: a substrate; a light emitting laminate disposed on the substrate; first and second electrodes provided on the light emitting laminate; first and second bumps provided on the first and second electrodes, respectively; a passivation film which is provided on the substrate, exposes portions of the upper surfaces of the first and second bumps, and covers the laminate; and a light conversion layer covering the rear surface of the substrate, a side surface of the substrate, and a side surface of the passivation film.

Abstract: A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.

Abstract: A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

Abstract: An electronic device having a touch screen and an operation control method thereof are provided. The electronic includes a touch screen which receives a plurality of manipulations; and a controller which determines whether a second manipulation is made on a screen displayed on the touch screen during a predetermined time period after a first manipulation is made on the screen, and controls to perform an operation corresponding to the second manipulation instead of an operation corresponding to the first manipulation to be performed, if the second manipulation is made during the predetermined time after the first manipulation is made.

Abstract: A method of determining a location of a mobile terminal location is provided. The method includes respectively receiving, by two antennas, first and second reception signals from the mobile terminal, calculating, by a communication module, a reception strength value (hereinafter referred to as RSSI_1) of the first reception signal and a reception strength value (hereinafter referred to as RSSI_2) of the second reception signal, and determining, by a location determination module, a region where the mobile terminal is located, based on a result obtained by comparing one RSSI of the RSSI_1 and the RSSI_2 with a reference value set based on a decision tree technique and a result obtained by comparing the one RSSI with a detailed reference value set based on a hysteresis technique.

Abstract: A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.

Abstract: A method of determining a location of a mobile terminal location is provided. The method includes respectively receiving, by two antennas, first and second reception signals from the mobile terminal, calculating, by a communication module, a reception strength value (hereinafter referred to as RSSI_1) of the first reception signal and a reception strength value (hereinafter referred to as RSSI_2) of the second reception signal, and determining, by a location determination module, a region where the mobile terminal is located, based on a result obtained by comparing one RSSI of the RSSI_1 and the RSSI_2 with a reference value set based on a decision tree technique and a result obtained by comparing the one RSSI with a detailed reference value set based on a hysteresis technique.

Abstract: An electronic device having a touch screen and an operation control method thereof are provided. The electronic includes a touch screen which receives a plurality of manipulations; and a controller which determines whether a second manipulation is made on a screen displayed on the touch screen during a predetermined time period after a first manipulation is made on the screen, and controls to perform an operation corresponding to the second manipulation instead of an operation corresponding to the first manipulation to be performed, if the second manipulation is made during the predetermined time after the first manipulation is made.

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

Abstract: An electronic device having a touch screen and an operation control method thereof are provided. The electronic includes a touch screen which receives a plurality of manipulations; and a controller which determines whether a second manipulation is made on a screen displayed on the touch screen during a predetermined time period after a first manipulation is made on the screen, and controls to perform an operation corresponding to the second manipulation instead of an operation corresponding to the first manipulation to be performed, if the second manipulation is made during the predetermined time after the first manipulation is made.

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

Abstract: Provided is a method of determining a toggle sequence for error detection based on a soft decision value and a method and apparatus for determining an error pattern, and more particularly, to a method of determining an optimum toggle sequence and error pattern based on a soft decision value in order to allow for faster error (pattern) detection and correction. It is an object of the invention to implement low redundancy, less delay, and a receive-side error correction capability by combining advantages of the conventional ARQ scheme and the conventional FEC scheme using a soft decision reliability. For this purpose, according to a first embodiment of the present invention, in order to optimize the toggle sequence speed, there is provided a method of determining a toggle sequence such that bits are toggled sequentially in the order of a smaller sum of soft decision reliabilities to be toggled.

Abstract: A light-emitting diode and a manufacturing method therefor are disclosed. The light-emitting diode comprises: a first conductive semiconductor layer; at least two light-emitting units arranged by being spaced from each other on the first conductive semiconductor layer, respectively including an active layer and a second conductive semiconductor layer, and including one or more contact holes through which the first conductive semiconductor layer is partially exposed; an additional contact area located between the light-emitting units; a second electrode making ohmic contact with the second conductive semiconductor layer; a lower insulation layer; and a first electrode making ohmic contact with the first conductive semiconductor layer through the contact holes of each of the light-emitting units and the additional contact area.

Abstract: Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.

Abstract: A light emitting diode having improved light efficiency and enhanced reflectivity of a device by forming an insulating reflective part on a reflective electrode formed on the upper surface of a mesa. A mesa exposing part is formed on the outer periphery and/or in the interior region of the reflective electrode to expose a predetermined area of the upper surface of the mesa such that reflection at the mesa exposing part is performed by the insulating reflective part.