Abstract: The present invention relates to a phosphine precursor for the preparation of a quantum dot, and a quantum dot prepared therefrom. Using the phosphine precursor for the preparation of a quantum dot of the present invention, a quantum dot with improved luminous efficiency and higher luminous color purity can be provided.

Abstract: The present invention relates to a phosphine precursor for the preparation of a quantum dot, and a quantum dot prepared therefrom. Using the phosphine precursor for the preparation of a quantum dot of the present invention, a quantum dot with improved luminous efficiency and higher luminous color purity can be provided.

Abstract: This invention relates to a compound for an organic electroluminescent device and to an organic electroluminescent device including the same. This compound for an organic electroluminescent device has high thermal stability, high triplet energy and high hole transport capability, and the organic electroluminescent device including the same is improved in thermal stability and light emission efficiency. When this compound is used as a hole transport layer material, a triplet exciton of a phosphorescent light emitting material is confined, thus improving efficiency of the organic electroluminescent device.

Abstract: This invention relates to a compound for an organic electroluminescent device and to an organic electroluminescent device including the same. This compound for an organic electroluminescent device including the same is improved in thermal stability and light emission efficiency. When this compound is used as a hole transport layer material, a triplet energy of a phosphorescent light emitting material is increased, thus improving the efficiency of the organic electroluminescent device.

Abstract: Semiconductor devices include a first gate pattern provided on the first active region, a second gate pattern over the first active region, a third gate pattern over the second active region, and a fourth gate pattern over the second active region. The second gate pattern is parallel to the first gate pattern in a first direction. The third gate pattern has an asymmetric shape to the first gate pattern with respect to the first direction, and the fourth gate pattern is parallel to the third gate pattern in the first direction, and has an asymmetric shape to the second gate pattern with respect to the first direction. MOS transistors having good properties may be provided in a narrow horizontal area. The MOS transistors may be used in highly stacked semiconductor devices.

Abstract: This invention relates to a compound for an organic electroluminescent device and to an organic electroluminescent device including the same. This compound for an organic electroluminescent device has high thermal stability, high triplet energy and high hole transport capability, and the organic electroluminescent device including the same is improved in thermal stability and light emission efficiency. When this compound is used as a hole transport layer material, a triplet exciton of a phosphorescent light emitting material is confined, thus improving efficiency of the organic electroluminescent device.

Abstract: This invention relates to a compound for an organic electroluminescent device represented by Chemical Formula 1 below and to an organic electroluminescent device including the same. According to the present invention, the organic electroluminescent device including the compound may have improved thermal stability and light emission efficiency. When the compound is used as a hole transport layer material, a triplet energy of a phosphorescent light emitting material increase, thus improving efficiency of the organic electroluminescent device.

Abstract: This invention relates to a compound for an organic electroluminescent device and to an organic electroluminescent device including the same. This compound for an organic electroluminescent device including the same is improved in thermal stability and light emission efficiency. When this compound is used as a hole transport layer material, a triplet energy of a phosphorescent light emitting material is increased, thus improving the efficiency of the organic electroluminescent device.

Abstract: Semiconductor devices include a first gate pattern provided on the first active region, a second gate pattern over the first active region, a third gate pattern over the second active region, and a fourth gate pattern over the second active region. The second gate pattern is parallel to the first gate pattern in a first direction. The third gate pattern has an asymmetric shape to the first gate pattern with respect to the first direction, and the fourth gate pattern is parallel to the third gate pattern in the first direction, and has an asymmetric shape to the second gate pattern with respect to the first direction. MOS transistors having good properties may be provided in a narrow horizontal area. The MOS transistors may be used in highly stacked semiconductor devices.

Abstract: SRAM cells and devices are provided. The SRAM cells may share connections with neighboring cells, including ground, power supply voltage and/or bit line connections. SRAM cells and devices are also provided that include first and second active regions disposed at a semiconductor substrate. Parallel first and second gate electrodes cross over the first and second active regions. One end of the first active region adjacent to the first gate electrode is electrically connected to the second active region adjacent to the first gate electrode through a first node line parallel to the first gate electrode, and the other end of the first active region adjacent to the second gate electrode is electrically connected to the second active region adjacent to the second gate electrode through a second node line parallel to the second gate electrode.

Abstract: SRAM cells and devices are provided. The SRAM cells may share connections with neighboring cells, including ground, power supply voltage and/or bit line connections. SRAM cells and devices are also provided that include first and second active regions disposed at a semiconductor substrate. Parallel first and second gate electrodes cross over the first and second active regions. One end of the first active region adjacent to the first gate electrode is electrically connected to the second active region adjacent to the first gate electrode through a first node line parallel to the first gate electrode, and the other end of the first active region adjacent to the second gate electrode is electrically connected to the second active region adjacent to the second gate electrode through a second node line parallel to the second gate electrode.

Abstract: A high vacuum apparatus for fabricating a semiconductor device includes a reactive chamber provided with an inlet and an outlet for a reactive gas, a suscepter installed in the reactive chamber for mounting the semiconductor thereon and a vacuum pump connected with the outlet to make the inside of the reactive chamber to put in a high vacuum state, wherein a gas injector of the reactive gas inlet is directed downward of the semiconductor device so that the initial gas flowing of the reactive gas injected from the reactive gas inlet does not directly pass the upper portion of the semiconductor substrate mounted on the suscepter. Since the reactive gas is prevented from cooling and condensing at the upper surface of the semiconductor substrate, defective proportion of the semiconductor device can be remarkably reduced.

Abstract: A high vacuum apparatus for fabricating a semiconductor device includes a reactive chamber provided with an inlet and an outlet for a reactive gas, a suscepter installed in the reactive chamber for mounting the semiconductor thereon and a vacuum pump connected with the outlet to make the inside of the reactive chamber to put in a high vacuum state, wherein a gas injector of the reactive gas inlet is directed downward of the semiconductor device so that the initial gas flowing of the reactive gas injected from the reactive gas inlet does not directly pass the upper portion of the semiconductor substrate mounted on the suscepter. Since the reactive gas is prevented from cooling and condensing at the upper surface of the semiconductor substrate, defective proportion of the semiconductor device can be remarkably reduced.