Abstract: A home port for a semiconductor manufacturing nozzle head includes a body having a discharge space configured to receive treatment liquid discharged from a plurality of nozzles, discharge flow passages connected to be in communication with the discharge space and penetrating through the body so as to face the plurality of nozzles, and a cleaning liquid distribution system, which is formed to penetrate through the body, and is connected to transfer a cleaning liquid to the discharge flow passages. The cleaning liquid distribution system includes supply flow passages connected to supply the cleaning liquid to the discharge flow passages, and a lead-in passage connected to and which joins the supply flow passages, and connected to receive the cleaning liquid injected from the outside.

Abstract: An atomic layer etching method using a ligand exchange reaction may include a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber, a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber, and an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film.

Abstract: The present invention relates to a phosphine precursor for the preparation of a quantum dot, and a quantum dot prepared therefrom. Using the phosphine precursor for the preparation of a quantum dot of the present invention, a quantum dot with improved luminous efficiency and higher luminous color purity can be provided.

Abstract: A method of generating hollow cathode plasma and a method of treating a large area substrate using the hollow cathode plasma are disclosed. In the methods, the hollow cathode plasma is generated by a gas introduced between a hollow cathode in which a plurality of lower grooves where plasma is generated is defined in a bottom surface thereof and a baffle in which a plurality of injection holes is defined. A substrate disposed on a substrate support member is treated using the hollow cathode plasma passing through the injection holes. The uniform plasma having high density can be generated by hollow cathode effect due to the hollow cathode having the lower grooves and the injection holes of the baffle. Also, since the substrate can be treated using a hydrogen gas and a nitrogen gas in an ashing process, a damage of a low dielectric constant dielectric can be minimized.

Abstract: Provided are a method of generating hollow cathode plasma and a method of treating a large area substrate using the hollow cathode plasma. In the methods, the hollow cathode plasma is generated by a gas introduced between a hollow cathode in which a plurality of lower grooves where plasma is generated is defined in a bottom surface thereof and a baffle in which a plurality of injection holes is defined. A substrate disposed on a substrate support member is treated using the hollow cathode plasma passing through the injection holes. The uniform plasma having high density can be generated by hollow cathode effect due to the hollow cathode having the lower grooves and the injection holes of the baffle. Also, since the substrate can be treated using a hydrogen gas and a nitrogen gas in an ashing process, a damage of a low dielectric constant dielectric can be minimized.