Abstract: The present disclosure provides a display device that includes an insulating layer disposed on a substrate. The display device further includes a plurality of first electrodes and contact electrodes disposed on the insulating layer. The display device further includes a plurality of light-emitting elements disposed on the plurality of first electrodes. The display device further includes a second electrode disposed on the plurality of light-emitting elements. The display device further includes a passivation layer covering the first electrode. The display device further includes a first opening hole at the passivation layer. The first opening hole extends through the passivation layer. The passivation layer has a first opening hole exposing a portion of an upper surface of the first electrode.

Abstract: The present invention relates to a method and apparatus for unsupervised domain adaptation, including the steps of generating a first augmented domain associated with a source domain, generating a second augmented domain associated with a target domain, and performing unsupervised domain adaptation by using the first augmented domain and the second augmented domain as a bridge for connecting the source domain and the target domain, and it is possible to apply to other exemplary embodiments.

Abstract: The present invention relates to a method and apparatus for unsupervised domain adaptation, including the steps of generating a first augmented domain associated with a source domain, generating a second augmented domain associated with a target domain, and performing unsupervised domain adaptation by using the first augmented domain and the second augmented domain as a bridge for connecting the source domain and the target domain, and it is possible to apply to other exemplary embodiments.

Abstract: A semiconductor device having an EMI shield layer and/or EMI shielding wires, and a manufacturing method thereof, are provided. In an example embodiment, the semiconductor device includes a semiconductor die, an EMI shield layer shielding the semiconductor die, and an encapsulating portion encapsulating the EMI shield layer. In another example embodiment, the semiconductor device further includes EMI shielding wires extending from the EMI shield layer and shielding the semiconductor die.

Abstract: A semiconductor device having an EMI shield layer and/or EMI shielding wires, and a manufacturing method thereof, are provided. In an example embodiment, the semiconductor device includes a semiconductor die, an EMI shield layer shielding the semiconductor die, and an encapsulating portion encapsulating the EMI shield layer. In another example embodiment, the semiconductor device further includes EMI shielding wires extending from the EMI shield layer and shielding the semiconductor die.